摘要
本实验对记忆保持（ｒｅｔｅｎｔｉｏｎ）良好组和低劣组小鼠海马ＣＡ３区ＧｒａｙⅠ型突触界面结构进行了定量观察分析。结果表明：记忆保持良好组海马ＣＡ３区突触后膜致密物质（ｐｏｓｔ—ｓｙｎａｐｔｉｃｄｅｎｓｉｔｙ，ＰＳＤ）极显著地密于记忆保持低劣组（Ｐ＜０．０１）。同时，记忆良好组出现了穿孔性突触（ｐｅｒｆｏｒａｔｅｄｓｙｎａｐｓｅ），而记忆低劣组没有出现。此外，还测量了突触界面曲率、突触活性区长度和突触间隙宽度，并统计了突触界面弯曲类型（正向弯曲型、负向弯曲型和平直型）的百分比，所得数据在两组间均无显著性差异。结果提示：突触后膜致密物质厚度与记忆保持的程度密切相关，而且ＰＳＤ增大与出现穿孔性突触相平行。
The structure parameters of Gray I synaptic interface in the bippocampal CA3 area of mice with good and inferior memory retention have been analysed quantitahvely. The main results are as follows: The Post-synaphc density (PSD) in the hippocampal CA3 area of good memory retenhon group was significanny greater than that of inferior memory retention group (p<0.01). Perforated synapses were found in the good memory retention group while it was absent in the inferior memory retention group.The curvature of synaptic interface, the length of synaptic active zone, the width of synaptic cleft and Percentage of different types of synaptic curvature were also examined and there was no significant difference tetween the two groups.The results suggest that there is a correlation between the PSD and the ability of memory retention, and that the increase of the PSD is parallel with formation of perforated synapse.
出处
《神经科学》
SCIE
CAS
1995年第3期136-140,共5页
Chinese Journal of Neuroscience
基金
国家自然科学基金
关键词
突触界面结构
海马CA3区
记忆保持
电镜
synaptic interface structure
CA3 area of hippocampus
memory retention
mice
electron microscopy
