摘要
本文应用计算机,绘出各类重掺Ⅲ-Ⅴ族化合物半导体在不同等离子频率ω_p下的反射率曲线,从中找出了反射谱的高低频反射边在反射率极小值处所对应的频率ω_1与ω_2之和与ω_p间的函数关系.并应用此关系对不同载流子浓度的重掺Ⅲ-Ⅴ族化合物半导体GaAs和Inp样品进行实验上的验证,获得了满意的结果.
Reflectivity curves of several kinds of heavily-doped III-V compound semiconductors aredrawn in different plasma frequency ωp using computer simulation.The relation between ω,and the sum of ω_1 and ω_2 is found, where ω_1 and ω_2 are frequencies of the high-and low-frequ-ency reflection edge on reflection spectra at the positions of reflectivity minima. Heavily-do-ped GaAs and InP with different carrier concentrations are tested using this method and theresult is satisfactory.
