摘要
轻掺杂漏(LDD)MOSFET是一种已用在VLSI中的新型MOSFET结构.为了有效地进行LDD MOSFEI的优化设计,我们在二维数值模拟器MINIMOS的基础上,修改了边界条件及输入输出格式,考虑了轻掺杂区的杂质分布,研制成功了一种既适用于常规以MOSFET,又适用于LDD MOSFET的二维数值模拟程序FD-MINIMOS.应用该程序对LDD MOSFET的一系列直流特性模拟的结果表明,不同的轻掺杂浓度对于抑制沟道电场及热电子效应具有不同的效果,为轻掺杂区优化设计提供了重要信息.
Using simulator as an aided tool for LDD MOSFET disign, the cycle and cost can con-siderably be decreased.Based on the two dimensional simulator MINIMOS and consideringthe different boundary conditions,input/output format as well as the concentration distributionof the lightly doped region,a new program FD-MINIMOS which is not only suitable forconventional MOSFET but also for the LDD MOSFET is presented.The preformance of de-creasing the channel electric field and the substrate current for LDD MOSFET can be wellsimulated by using FD-MINIMOS.The results of simulation also indicate that different lightdoping concentration has different effect to refrain the channel electric field.
基金
国家自然科学基金
关键词
掺杂
MOSFET
数值模拟
Lightly doped drain MOSFET
Numerical simulation
Simulation program for MOSFET
