摘要
本文描述了以国产设备为基础研制出的轻掺杂漏MOS FET.测试结果表明,轻掺杂漏MOS FET能够有效地抗热载流子效应及短沟道效应,速度也较快。
The lightly doped drain MOSFET made basically by domestic equipment has been described. The tested results indicated that the lightly doped drain MOSFET can resist the hot carrier effect and short channel effect effectively, and havs a fast speed.
出处
《微电子学与计算机》
CSCD
北大核心
1989年第1期33-35,共3页
Microelectronics & Computer
