摘要
在束缚态近似下,用级数解法求解电场下各种不同形状GaAs/GaAlAs量子阱中电子和空穴子带,进一步采用变分方法得到激子结合能.由此,我们首次得到电场下由抛物阱至方位阱子带和激子峰能移的变化图象.在考虑GaAs/GaAlAs量子阱形状影响的基础上,我们计算所得结果与实验吻合得很好.
Under the bound-state approximation,subbands of electrons and holes in GaAs/GaAlAsquantum wells with different shapes in an electric field are solved by using the method of se-ries expansion.Then, variational method is used to obtain the binding energies of excitons.Based on these, we have for the first time obtained the variational picture of the energy shiftsof subbands and excitons from a parabolic to square well.Considering the effect of the shapeof GaAs/GaAlAs quantum well, caloulated results agree well with experiments.
