摘要
本文作者用RF溅射法获得碳化硅薄膜,利用AES、XPS、TEM和UPS等现代分析仪器研究了碳化硅薄膜的结构.溅射薄膜中Si∶C=1∶1.主要化学键形式为Si-C共价键,原子排布状态为非晶态,并且在短程结构中存在大量畸变与缺陷,薄膜为不理想非晶结构,带尾较长.
Silicon carbide films were obfained through RF-sputtering.The structure of the films isstudied by using modern analytical techniques such as AES, XPS, TEM and UPS.For RF-sputtered films,the composition is about Si: C=1:1, the predominant chemical bond is covalent,and the films are amorphous.There are a lot of defects in the short range structure,whichis not an ideal amorphous structure with a longer band fail.
关键词
碳化硅
溅射
薄膜
结构
Silicon carbide
Sputtering film
Structure
Amorphous
