摘要
本文研究了利用光刻图形转移过程中,湿法化学刻蚀存在的侧向钻蚀,通过对钻蚀程度的控制获得小于0.5μm的线条间隔.
A new method for fabricating submicron spaces is described.The method demonstratesto be capable of producing submicron spaces (less than 0.5μm) between metal film linesusing chemical etching.The experiment is based on conventional semiconductor equipments.it is obvious that this method is not confined by materials of the thin film and the techniques ofpreparing the thin films.
关键词
亚微米技术
化学刻蚀
约瑟夫逊结
Submicron technique
Chemical etching
Josephon junction
