摘要
采用DV-Xα方法对多孔硅形成过程中位于表层的B和P杂质原子的作用进行研究,结果表明位于顶层硅原子层中的B和P杂质原子均可削弱其邻近的Si-Si键强度,因而可能导致出现腐蚀的突破点,再通过分析杂质对表面区势场的改变,可以认为位于顶层硅原子层中的B杂质原子产生腐蚀的突破点的可能性更大。
The roles of boron and phosphorus impurities laying on the surface of a sili-con sample in the process of preparing porous silicon are studied by using DV-Xα method, the results show that the impurities, which are in the top-atom-layer of a silicon sample, can weaken the strengths of the Si-Si bonds near these impurities, leading to appear etch pits, on the other hand, after analyzing the changes in the potential in the region of the surface resulting from the impurities, we suggest that the possiblity of occuriag an etching breakpoint produced by a boron atom is larger than that by a phosphorus.
出处
《物理学报》
SCIE
EI
CAS
CSCD
北大核心
1995年第5期745-754,共10页
Acta Physica Sinica
基金
国家自然科学基金资助的课题
