摘要
综述了硅中氮离子注入的应用和研究进展。主要讨论了氮离子注入形成SOI层的原理、质量的影响因素和电学性能;介绍了氮离子注入在制备超薄氧化栅极及其抑制掺杂杂质原子特别是硼原子扩散等方面的研究和应用。
The paper summarizes research process in SOI formed by N ion-implantation in silicon.In the paper,the factors influcing nitrogen ion-implantation and the electric properties of implanted layer are discussed in details.Furthermore,N ion-implantation that is used in ultra-thin gate oxide parts and in restraining the diffusion of doped impurity is also described.
出处
《材料导报》
EI
CAS
CSCD
2003年第2期69-72,共4页
Materials Reports
基金
国家自然科学基金(50032010)
