摘要
本文从理论上和实验上系统地研究了具有非自建增益波导的条形半导体激光器自发发射因子及其象散因子与波导尺寸、偏置电流和不同纵模等的关系.发现自发发射因子随电流变化并不是一常数,它在阈值电流附近有突变.采用自洽决定波导结构的方法得出增益波导的象散因子K只比折射率波导的K大几倍.指出从与实际不太符合的固定的复折射率分布模型出发是造成K大达两个量级的原因,并判明了目前尚有争论的两种象散因子表达式的正误.
The relations between the spontaneous emission factor together with the astigmatism factorand the waveguide size, the bias current and different longitudinal mode for the stripe geometrysemiconductor lasers with non-built-in gain guiding were systematically investegated both theo-retically and experimentally.The results show that the variation of the spontaneous emissionfactor with the bias current is not a constant,there is an abrupt change near the threshold cur-rent.The astigmatism factor K obtained by solving self-consistently and simultaneously theoptical field equation and the diffusion equation for non-built-in gain guiding is only a fewtimes as large as that for the built-in index guiding.The reason why the value of the astigma-tism factor is larger by two orders has been found out to be due to the adoption of an imposed-fixed-shaped distribution of the complex refractive index,which is not in agreement with rea-lity.Two disputing expressions for the astigmatism factor has also been cleared up.
基金
国家自然科学基金
关键词
半导体
激光器
自发发射因子
Semiconductor lasers
Spontaneous emission factor
Astigmatism factor
