摘要
高频窄脉冲电解加工(High-frequencyShortPulsesElectrochemicalMachining,简称HSPECM)可获微米级的加工精度,但较小的电源电流容量限制了它的推广使用。本文给出了一种通过功率MOSFET并联技术提高HSPECM电源电流容量的方案,讨论了MOSFET的并联均流技术和电源的快速短路保护。工艺实验表明,该电源的峰值电流可达3kA,快速短路保护电路在微秒级内可切断加工电源,满足对复杂型面及薄壁件工件的高精度加工要求。
High-frequency Short Pulses Electrochemical Machining （HSPECM） can get nucron level machining precision, however,less value of power current limits its prevalent using.This paper introduces the methods realization of improving current capacity of HSPECM power by using parallel-connected power-MOSFET elements.In addition,the technology of parallel-connected MOSFETs and quick short-circuit protection were discussed.The experimental results showed that the value of power current may reach 3kA, short-circuit protection can cut off machining power within microsecond level, and this power satisfies the need of high machining precision of complex model surface and thin wall workpieces.
出处
《电力电子技术》
CSCD
北大核心
2005年第4期97-99,共3页
Power Electronics
基金
总装备部国防重点预研项目(18YXXGY41)
陕西省教育厅科研计划项目(03JK123)~~
