摘要
采用反应离子刻蚀技术，设计、制备了一种角反射器耦合的１０单元ＩｎＧａＡｓ应变层单量子阱镇相列阵激光器。在高达４×Ｉｔｈ的工作电流范围内，获得了主单瓣远场输出，单瓣束宽最低达０．６４°，接近衍射极限。考虑了角反射器引入的纵模与侧模之间的耦合，及载流子注入引起的反折射率导引，用微扰理论作了模拟计算，表明角反射器耦合是锁相列阵的一种新的耦合机制；主瓣对应于同相锁定，支瓣是由周期性微扰引入的高阶本征模。
A ten-element InGaAs strained-layer single quantum well laser phased array coupled with corner reflectors (CRLA) was designed and fabricated by using reactive ion etching (RIE). A far-field pattern with main single lobe was obtained in a larger current range up to 4 ×threshold. The narrowest beam width measured for the main lobe was 0.64°, near the diffraction limit. The mode characteristicsof CRLAs were analyzed and simulated by using the Perturbation theory, taking into consideration the inter-coupling between longitudinal and lateral modes caused by the corner reflectors, and the anti-index guiding caused by carrier injection into InGaAs active layer. The results show that the coupling with corner reflectors is a new kind of coupling mechanisms for phase-locked laser array3 and the main lobe corresponds to in-phase locking, while the side lobes correspond to the higher order eigenmodes, as the result of periodical perturbstion.
出处
《光学学报》
EI
CAS
CSCD
北大核心
1995年第5期520-524,共5页
Acta Optica Sinica
