摘要
介绍了一种改善红外写入液晶光阀半导体透明导电膜导电性能的一种方法。通过对氧化铟掺铟比例的研究，经过大量科学实验，并采用X光电子能谱仪对两者的比例进行了定量分析，发现在对膜层透过特性影响不大的情况下，两者之间的质量百分比在90％比10％左右时，其膜层导电性能有明显提高，从方电阻十几kΩ／□降至730Ω／□。我们将此法制备的以BaF2为基底，在中心波长为10．6μm处透过率为56％，方电阻为730Ω／□的透明导电膜应用在红外写入液晶光阀透明电极上，得到了令人满意的效果。
A method of improving electric conductivity of optical transparent and electroconductive In2O3: In IR thin films is explained with semiconductor physics theory. The composition of the films has been analyzed with XPS. The analyzing results of transparent and eletroconductive thin films show that the content of In must be moderate and in the films the ratio between In2O3 and In is ideally about 9: 1. The electroconductive ability of the thin films is increased abviously. Films deposited on BaF2 with sheet resistance of 730 Ω／□ and transmittance of 56% at 10. 6μm have been satisfactorily used in the liquid crystal light valve.
出处
《光电子技术》
CAS
1995年第4期285-288,共4页
Optoelectronic Technology
