摘要
本文提出了一个测定任意取向的金刚石结构薄层晶向的方法——喇曼散射光极值法。文中推导了任意取向的金刚石结构薄层的喇曼散射光强与薄层晶向及入射光偏振方向间的函数关系,并利用此函数的极值定出晶向。利用本文方法所得硅单晶定向结果与X射线衍射法定向结果进行了比较。
A method for determining the orientation of thin crystal layer has been proposed, namely the Raman scattering extrems technique. The intensity of Raman scattered light from the diamond structure thin layer as a function of both the normal of the thin layer and the polarization direction of incident light is derived. The orientation of the thin layer is then determined by means of four extrema of this function. The results obtained by this method, for silicon wafers are compared with that dettermined by the X-ray method.
出处
《物理学报》
SCIE
EI
CAS
CSCD
北大核心
1989年第1期111-117,共7页
Acta Physica Sinica
