摘要
本文详细介绍电离辐照在Si—SiO_2界面产生的界面态。通过对铝栅和硅栅MOS器件辐照产生的界面态与时间和偏压之关系的研究,发现存在三种类型的界面态,即缓慢建立的、快速建立的和瞬时建立的界面态,并用已经报道的模型对这些界面态产生的机理作了初步说明。
The ionizing radiation-induced Si-SiO_2 interface-state is trodu(?)ed in detaif.After studying the relationship between radiationinduced interface-state and time and bias valtage in Al-gate and Si-gate MOS devices, we find there are three types of interface-state, that is slow build-up interface-state, rapid build-up interfece-state and prompt build-up interface-state. The build-up mechanisms of these types of interface-state are explained by publish ied mode
出处
《微电子学与计算机》
CSCD
北大核心
1989年第12期11-15,共5页
Microelectronics & Computer
