摘要
本文区分和研究外腔半导体激光器的两种窄谱机制,从而简捷地得出了其线宽公式。本文的基本思想对于优化外腔半导体激光器的设计和探索新的外腔结构具有指导意义。
The two kinds of the linewidth-narrowing mechanisms in external cavity semiconductor lasers are differentiated and studied, then the spectral linewidth formula is simply. obtained. The basic idea of this paper could provide guidlines for optimizing the design of external cavity semiconductor lasers and inventing some new externalcavity configurations.
出处
《通信学报》
EI
CSCD
北大核心
1989年第1期8-14,共7页
Journal on Communications
基金
国家自然科学基金资助项目的一部分
