期刊文献+

IC智能卡失效机理研究 被引量:4

Research on the Failure Mechanism of IC Smart Cards
在线阅读 下载PDF
导出
摘要 IC智能卡使用过程中出现的密码校验失效、数据丢失、应用区不能读写等一系列失效和可靠性问题,严重影响了其在社会生活各领域的广泛应用.分析研究了IC智能卡芯片碎裂、引线键合断裂、静电放电损伤等失效模式和失效机理,并结合IC卡制造工艺和失效IC卡的分析实例,对引起这些失效的根本原因作了深入探讨,就提升制造成品率、改善可靠性提出应对措施. Failures of IC smart cards,caused by fracture of thin/ultra-thin Si chip,break of wire bonding or ESD etc. have been seriously affecting their application. The corresponding failure modes and failure mechanisms are studied in detail,and the root cause resulting in such faliures are deeply investigated.Meanwhile,the measures for reducing the failure rate are suggested.
出处 《复旦学报(自然科学版)》 CAS CSCD 北大核心 2005年第1期149-154,共6页 Journal of Fudan University:Natural Science
关键词 IC智能卡 失效机理 引线键合 静电放电 芯片 IC卡 碎裂 性问题 电损伤 影响 IC card thin/ultra-thin Si chip fracture wire bonding
  • 相关文献

参考文献6

二级参考文献14

  • 1International Technology Roadmap for Semiconductors,2001Edition Front End Process, http://www.semi.org/.
  • 2GAULHOFER E.Wafer Thinning and Strength Enhancement to Meet Emerging Packaging Requirements. IEMT Europe(2000),April.06-07,2000.
  • 3HENDRIX M,Advantages of Wet Chemical Spin-Processing for Wafer Thinning and Packaging Applications.2000 IEEE/CPMT.
  • 4SINIAGUINE O.Atmospheric Downsream Plasma Etching of Si Wafers.IEEE/CPMT Int' 1 Electronics Manufacturing Technology Symposium 1998.
  • 5MATSUI S.An Experimental Study on the Grinding of Silicon Wafer-The Wafer Rotation Grinding Method(1^st Report).Bull.Japan Soc.of Prec.Engg,Vol.No.41988.295-300.
  • 6KOMANDURI R.,"Technology Advances in Fine Abrasives Process",Annals of CIRP Vol.46(2) 1997.
  • 7PEI Z.,What is back grinding, http://cheetah.imse.ksu.edu/-zpei/ultrasonic_machining/wafergrinding/tuto-rial/backgrind.htm.
  • 8ITOH N.Finishing characteristics of brittle materials by ELID-lap grinding using metal-resin bond wheels International Journal of Machine tools & Manufacture 38(1998) p747-762.
  • 9FORCE S L.Meeting market Requirements through innovation:The new DBG Process.TAP technology,(2001)71-73.
  • 10LANDESBERGER C.New Process Scheme for Wafr Thinning and Stress-free Seperation of Ultra Thin ICS.

共引文献38

同被引文献14

引证文献4

二级引证文献2

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部