摘要
对向靶反应溅射法制备的FeN化合物薄膜的结构和磁性对基板偏压的变化很敏感,不同的偏压数值作用的效果不同。我们用基板偏压促进成膜原子间的相互扩散,以及对负离子排斥降低膜中N的浓度和粒子轰击对膜再溅射的观点解释了FeN膜的结构和磁性的变化。
The structures and magnetic properties of FeN compound films prepared by Facing-Targets Sputtering method are sensitive to the negative substrate bias voltage (V_b). The effects of Vb can promote the diffusion of adatoms, and resputtering processes as well as the repellent of negative ions which cause the reduction of N concentration of the films.
出处
《天津大学学报》
EI
CAS
CSCD
1989年第4期93-97,共5页
Journal of Tianjin University(Science and Technology)
关键词
FeN膜
结构
磁性
对向靶溅射法
resputtering, lattice distortion, facing targets reactive sputtering, binding magnetic field
