摘要
本文从ｎ型赝三元温差电材料碳掺杂后加工性能明显改善的事实出发，根据Ｘ射线衍射和电子能谱等测定的实验结果，指出了掺入材料中的碳原子富集在片层微晶的间界；讨论了碳原子的电行为；阐明了掺碳材料性能改善的机理。
On the facts obviously improved in processing property of the n-type pseudoternary thermoelectric material after carbon doped,the X-ray diffraction(XRD)pattern and electron spectroscopy for chemical analysis(ESCA)of pure and C-doped samples were determined. The experimental results show that the doped carbon concentrate on the border of the crystallite layer in materials. The electric behaviour of the carbon were discussed, and the mechanism of improving properties of the carbon-doped material are explained.
出处
《人工晶体学报》
EI
CAS
CSCD
1994年第4期302-308,共7页
Journal of Synthetic Crystals
关键词
掺碳
温差电材料
晶体
性能
C-doped thermoelectric material
layer structure
binding energy
processing property
