摘要
探讨了单相合金高温形变再结晶后连续冷却条件下正常晶粒长大问题。结合传热学及晶界迁移理论证明，在连续冷却条件下晶粒的长大满足关系。进一步的理论分析表明，在连续冷却条件下，晶粒的长大存在因温度连续变化而形成的极限尺寸ｄ＿ｍ，以及相应的临界时间τ＿ｃ。试验结果与上述理论吻合较好。
The normal grain growth during continuous cooling was studied in a single-phase material after recrystallizing.According to the theories of heat conduction and grainboundaries migration, the equation of grain growth was suggested:Further analysis shows that there are limit values of grain growth(d_m)and critital time(τ_c)during continuous cooling. The theoretical values basically corresponed with theexperimental results.
关键词
正常晶粒长大
连续冷却
集总热容法
normal grain growth,continuous cooling,the lumped capacitance method
