摘要
报道了钝化发射极、背面定域扩散高效率硅太阳电池的研制结果。阐述了电池的工艺制作流程及结构设计特点，并分析其获得高转换效率的机理。由于电池设计及制作中采用了双面钝化，背面进行定域小面积的硼扩散，正面利用“倒金字塔”结构，同时配以谈磷、浓磷分区扩散等手段，使硅太阳电他的开路电压、短路电流和填充因子都得到较大提高，在ＡＭ１．５，２５℃的光照条件下，光电转换效率η＝２３．８％。
The develdopment of high efficiency silicon solar cells with passivated emitter and local-ized rear diffusion is reported.The technological procedures of the preparation and the struc-tural design features are described.The mechanism of achieving high conversion efficiency isdiscussed.Technical measures such as passivation on both faces,localized small-area borondiffusion on the rear face, inverted pyramid structure on the front face as well as zoned diffu-sion with light and dense phosphorus have been adopted in the design or during the prepara-tion. The open-circuit voltage,the short-circuit current and the space factor have been re-markably improved.Under AM 1.5 and 25℃ irradiation,an efficiency of η=23.8% ofphatoelectricity conversion has been attained.
出处
《华中理工大学学报》
CSCD
北大核心
1994年第9期1-3,共3页
Journal of Huazhong University of Science and Technology
关键词
双面钝化
定域硼扩散
硅太阳能电池
high efficiency silicon solar cell
passivation on both faces
localized boron dif-fusion on rear face
inverted pyramid structure
zoned diffustion
