摘要
我们制作了一种可在６—１１Ｖ偏压范围内均匀发射可见光的新型金属—绝缘体—金属结型发光器件，其内层结构是Ａｌ－Ａｌ２Ｏ３－ＭｇＦ２－Ａｎ（Ｃｕ），其承受偏压、单位面积发光功率及相应的外量子效应高过迄今已知的Ｍ－Ｏ－Ｍ遂道结型发光器件．本文首次报导并论证了这一由Ｓｃｈｏｔｔｋｙ热电子所激发的光发射及其物理图象：Ｓｃｈｏｔｔｋｙ热电子在ＡＯ（Ｃｕ）－真空界面激发表面等离极化激元（ＳＰＰ）；Ａｕ（Ｃｕ）－真空界面的ＳＰＰ通过表面粗糙度与外光子耦合．这一图象与该器件的电流—电压（Ｉ—Ｖ）、电流—温度（Ｉ－Ｔ）关系及其发射光谱的主要特征一致．
e made a new type of high bias maetal-insulator-metal light-emitting junctions (Al-Al2O3-MgF2-An(Cu)], which emit visible optical radiation when biased at voltages in the range 6- 11V. The highest applied bias that the light-emitting devices can stand,and the output of per unit area and the corresponding power conversion efficiency werehigher than before metal-oxide-metal type light-emitting tunnel junctions. For the first time, the present paper report and argue this optical radiation excisted by the Schottky hot electrons and its physical picture: the hot electrons in the negative electrode areforced to positive electrode by the exerted electrical field through Schottky effect and then excite at An (Cu)-vacuum interface surface plasmon-polarition (SPP), which are in turn coupled to external radiation through surface roughness. This picture is supported by measurement of current-voltage (I-V) and current-temperature(I-T) characteristics of the light-emitting devices, and by the observed light emission spectra from the lightemitting devices.
出处
《发光学报》
EI
CAS
CSCD
北大核心
1994年第4期290-296,共7页
Chinese Journal of Luminescence
基金
国家自然科学基金
关键词
SPP
结型发光器件
发光隧道结
肖特基效应
metal-insulator-metal junction, Schottky effect, light-emitting tunnel junction, surface plasmon polaritionReceived 10 March 1994
