摘要
采用液相外延方法，生长出外延层与衬底之间的失配度△α／α≤１．６×１０－３界面平直、组分恒定的ＩｎＡｓＰＳｂ／ＩｎＡｓ外延晶体．单异质结外延层，得到了３．０９μｍ波长的激光输出，双异质结外延片也得到了较好的伏－安特性曲线．
uaternary InAsPSb epitaxial layers have been directly grown on InAs substrate using liquid phase epitaxy (LPE) techniques. Some properties of InAsPSb/InAs were investigated. I-V characterstics of P-N junction consist of P-InAsPSb and N-InAs substrate were given at 300K and 77K.The epitaxial layers were lattice mismatch to InAs about 1. 6×10-3.The diodes were driven by current pulsesob of 10μs duration and 500Hz-5kHz pulses/s repetition.The laser emission with wavelength 3. 09μm was observed from single heterojunction made of P-InAs0.82P0.12Sb0.06 and N--InAs substrate at 12K.
出处
《发光学报》
EI
CAS
CSCD
北大核心
1994年第4期327-331,共5页
Chinese Journal of Luminescence
