摘要
本文介绍了真空微电子器件场发射阴极硅尖阵列的制备工艺技术。采用硅的各向异性腐蚀工艺和氧化削尖技术制成了形状和发射性能均较好的硅尖阵列，测试结果表明，起始发射电压为５～６Ｖ，发射电流在阳极电压为２０Ｖ时为０．５ｍＡ，反向击穿电压为７５Ｖ。
This paper describes the preparation technology of field emission Si-tips for Vacuummicroelectronic devices.Si-tips exhibiting better emission. characteristics have been fabricated byusing the technology of silicon anisotropic etching and oxidation sharpening. Measurement resultsshow that the starting emission voltage is 5～ 6V,emission current is 0. 5 mA at anode voltage of20V, and back breakdown voltage is 75V.
出处
《电子器件》
CAS
1994年第4期6-10,共5页
Chinese Journal of Electron Devices
