摘要
我们用光电导谱技术和光电流相移分析技术研究了氢化非晶硅（ａ－Ｓｉ：Ｈ）带隙态密度及其分布的亚稳变化效应．实验发现光致亚稳缺陷分布在整个光学带隙中，它们的退火行为与它们在带隙中的位置相联系．首次从实验上直接观察到第二类亚稳缺陷在带隙中的能量位置，这类缺陷具有易产生和难退火的特点．定性地确定出了亚稳缺陷的退火激活能与其在带隙中能量位置的关系．
Abstract The metastable changes in density and energetic distribution of gap states in intrinsic hydrogenated amorphous silicon(a-Si:H) have been investigated by using photoconductivity spectroscopy(PCS) and modulated photocurrent(MPC) techniques.It has been found that the light-induced metastable defects(MSD's) are distributed in the optical gap, and their annealing processes are different in magnitude. The energy position(or range) of the sencond kind of metastable defects affecting the recombination lifetime of photocarriers has been experimentally observed for the first time. These defects are created easily upon illumination and annealed slowly.The relationship between the annealing activation energy of MSD's and energy position/range in the optical gap has been determined qualitatively.
基金
国家自然科学基金
关键词
氢化非晶硅
亚稳缺陷
光学带隙
Annealing
Band structure
Defects
Photoconductivity
Silicon
