摘要
在金属有机物化学汽相淀积过程中，反应器中的回流现象严重影响生长层的界面陡峭性．本文从关于ＭＯＣＶＤ的流体力学基本方程出发，用二维有限差分和流函数涡量法求解方程，取得了不同条件下气流场的流谱．计算结果表明，减小反应器坛强、增加运载气体流量等方法可以消除回流．本文所用的流函数－涡量法具有简单、明了，运算速度快等优点．
Abstract in a MOCVD reactor, very pronounced return flow may develop due tosudden heating of cold gas,which impairs the abruptness of junction.The Numerical calculations on gas flow are performed based on the differential equations forthe conservation of mass,energy and momentum using stream functionvortex method.The results show that the occurence of return flows can be eliminited by increasinggas flow and decreasing reactor pressure.
关键词
半导体材料
MOCVD
回流
数值模拟
Chemical vapor deposition
Flow control
Numerical methods
Simulation
