摘要
用X光电子能谱(XPS)方法研究了界面特性和Ge/GaAs(100)异质结的能带偏离关系。实验表明,当在清洁的GaAs(100)表面生长Ge异质结时,其价带偏离(△E_v)与界面特性无关,而在Ar离子注入的GaAs(100)表面上生长的Ge异质结,其价带偏离与Ar^+离子的浓度分布有关。
The relationship between the interface properties and the band offsets of the Ge/GaAs (100) heterojunction is studied with X-ray photoelectron spectroscopy (XPS). The experimental results show that the valence-band offsets (△E_v) are independent on the interface properties when the Ge overlayer deposites on the clean CaAs(100) surface, and the valence-band offsets(△E_v) are related to the distribution of Ar^+ concentration when the Ge overlayer is evaporated on the Ar^+-implanted GaAs (100) surface.
基金
高等学校博士点专项基金
