摘要
采用等离子束辅助沉积的方法在n-Si(001)衬底上制备出ZnO薄膜。X射线衍射谱显示,所制备的ZnO薄膜有较强的(002)晶面衍射峰,表明ZnO薄膜为c轴择优取向生长的,并且随着退火温度升高,晶粒逐渐增大,衍射峰逐渐增强。光致发光谱测量发现,样品分别在3.28eV和2.48eV存在紫外发射和深能级发射两个较强的发射峰,并且随着退火温度升高,深能级发射逐渐减弱,紫外发射峰得到进一步改善。四探针测试电阻率结果表明,随着退火温度的升高,ZnO薄膜的电阻率呈线性增加。
ZnO thin films were prepared on n-Si (001) substrates by plasma beam assisted deposition (PBAD). X-ray diffraction (XRD) results show that the (002) face exhibits more intensive diffraction peaks. It demonstrates that the growth of ZnO thin films is c-axis preferred orientation. And intensity of X-ray diffraction peaks and grain sizes increase with annealing temperature. A near-band-edge (NBE) emission at 3.28 eV and a deep level (DL) emission at 2.48 eV were observed in the photoluminescence spectra respectively. With the increase of annealing temperature, the DL emission at 2.48 eV gradually weakened and NBE emission at 3.28 eV strengthened. Moreover, the PL peaks shift to higher energy orientation. Resistivity of the ZnO thin films which were tested by four-point probe increased linearly with annealing temperatures. The plasma beam assisted deposition technique is a promising method for the preparation of ZnO thin films.
出处
《四川大学学报（工程科学版）》
EI
CAS
CSCD
2004年第6期77-81,共5页
Journal of Sichuan University (Engineering Science Edition)
关键词
等离子束辅助沉积
光致发光
ZNO薄膜
Annealing
Deposition
Photoluminescence
Thin films
X ray diffraction
