摘要
本文主要利用电子透射显微镜观察硅片直接键合界面,在界面处存在一无定型过渡区,证实了依靠硅片表面吸附的羟基作用完成键合时,在界面会留下极薄的硅氧化物无定形区.
Silicon Wafer direct bonding interface is observed by transmission electron microscope (TEM). Thare is non-crystal transition region on interface, It is concluded that very thin silicon oxide non-crystel region remains on the interface whell bonding is completed by silicon surface adsorbing hydroxyl.
出处
《电子器件》
CAS
1993年第4期203-205,共3页
Chinese Journal of Electron Devices
