摘要
场发射现象在上世纪早期进行过深入的理论和实验研究,但是近年来在显示领域的应用潜力而引起人们的广泛关注和重视;同时场发射现象涉及典型的量子效应即隧穿效应,其细致的物理过程依然值得重视的一个研究领域。近年来场发射的理论研究主要是在两个领域:一是以提高场发射电流为目的进行的理论探索;二是场发射的物理过程。本文介绍近年来场发射理论研究的部分进展。
The phenomenon of field emission is one of typical tunnelling effects and has been widely studied both experimentally and theoretically in the early last century.However the potential application in the field emission display,which requires a stable and uniform electron emission under low driving voltage,still inspires researchers to reveal the details of tunnelling process.In this paper,some of the theoretical progresses were introduced including the classical Fowler-Nordheim theory,field enhancement factor and process of field emission.
出处
《真空电子技术》
2012年第6期30-34,共5页
Vacuum Electronics
关键词
隧穿效应
场发射理论
F-N理论
Tunnelling effect,Theory of field emission,Fowler-Nordheim theory
