|
1
|
Structure and Electrical Properties of Ge2Sb2Te5 Thin Film Used for Ovonic Unified Memory |
张挺
刘波
夏吉林
宋志棠
封松林
陈宝明
|
《Chinese Physics Letters》
SCIE
CAS
CSCD
|
2004 |
3
|
|
|
2
|
Electrical Properties of Ag-Doped Ge2Sb2Te5 Films Used for Phase Change Random Access Memory |
夏吉林
刘波
宋志棠
封松林
陈邦明
|
《Chinese Physics Letters》
SCIE
CAS
CSCD
|
2005 |
2
|
|
|
3
|
Raman spectra and XPS studies of phase changes in Ge2Sb2Te5 films |
ChenBomy
|
《Chinese Physics B》
SCIE
EI
CAS
CSCD
|
2004 |
1
|
|
|
4
|
Effect of Annealing Temperature on the Microstructure and Resistivity of Ge2Sb2Te5 Films |
LIUBo
SONGZhi-Tang
FENGSong-Lin
CHENBomy
|
《Chinese Physics Letters》
SCIE
CAS
CSCD
|
2004 |
1
|
|
|
5
|
Reversible Phase Change for C-RAM Nano-Cell-Element Fabricated by Focused Ion Beam Method |
刘波
CHENBomy
|
《Chinese Physics Letters》
SCIE
CAS
CSCD
|
2005 |
1
|
|
|
6
|
Phase Transition Phenomena in Ultra-Thin Ge2Sb2Te5 Film |
刘波
宋志棠
刘卫丽
封松林
陈宝明
|
《Chinese Physics Letters》
SCIE
CAS
CSCD
|
2005 |
0 |
|
|
7
|
Single Cell Element of Chalcogenide Randoul Access Memory Fabricated with the Focused Ion Beam Method |
刘波
宋志棠
封松林
CHENBomy
|
《Chinese Physics Letters》
SCIE
CAS
CSCD
|
2004 |
0 |
|
