|
1
|
Reversible Phase Change for C-RAM Nano-Cell-Element Fabricated by Focused Ion Beam Method |
刘波
CHENBomy
|
《Chinese Physics Letters》
SCIE
CAS
CSCD
|
2005 |
1
|
|
|
2
|
Single Cell Element of Chalcogenide Randoul Access Memory Fabricated with the Focused Ion Beam Method |
刘波
宋志棠
封松林
CHENBomy
|
《Chinese Physics Letters》
SCIE
CAS
CSCD
|
2004 |
0 |
|
