Effect of flip chip bonding parameters on microstructure at the interconnect interface and shear properties of 64.8Sn35.2Pb microbumps were investigated in this work.Results show that the main intermetallic compound(I...Effect of flip chip bonding parameters on microstructure at the interconnect interface and shear properties of 64.8Sn35.2Pb microbumps were investigated in this work.Results show that the main intermetallic compound(IMC)at the interconnect interface is(Ni,Cu)_(3)Sn_(4)phase,and meanwhile a small amount of(Cu,Ni)_(6)Sn_(5)phase with a size of 50−100 nm is formed around(Ni,Cu)_(3)Sn_(4)phase.The orientation relationship of[-1-56](Ni,Cu)_(3)Sn_(4)//[152](Cu,Ni)_(6)Sn_(5)and(601)(Ni,Cu)_(3)Sn_(4)//(-201)(Cu,Ni)_(6)Sn_(5)is found between these two phases,and the atomic matching at the interface of the two phases is low.The highest shear force of 77.3 gf is achieved in the 64.8Sn35.2Pb microbump at the peak temperature of 250℃and parameter V1 because dense IMCs and no cracks form at the interconnect interface.Two typical fracture modes of microbumps are determined as solder fracture and mixed fracture.The high thermal stress presenting in the thick IMCs layer induces crack initiation,and cracks propagate along theα/βphase boundaries in the Sn-Pb solder under shear force,leading to a mixed fracture mode in the microbumps.展开更多
Effects of ultrasonic bonding parameters on atomic diffusion, microstructure at the Al-Au interface, and shear strength of Al-Au ultrasonic bonding were investigated by the combining experiments and finite element (FE...Effects of ultrasonic bonding parameters on atomic diffusion, microstructure at the Al-Au interface, and shear strength of Al-Au ultrasonic bonding were investigated by the combining experiments and finite element (FE) simulation. The quantitative model of atomic diffusion, which is related to the ultrasonic bonding parameters, time and distance, is established to calculate the atomic diffusion of the Al-Au interface. The maximum relative error between the calculated and experimental fraction of Al atom is 7.35%, indicating high prediction accuracy of this model. During the process of ultrasonic bonding, Au8Al3 is the main intermetallic compound (IMC) at the Al-Au interface. With larger bonding forces, higher ultrasonic powers and longer bonding time, it is more difficult to remove the oxide particles from the Al-Au interface, which hinders the atomic diffusion. Therefore, the complicated stress state and the existence of oxide particles both promotes the formation of holes. The shear strength of Al-Au ultrasonic bonding increases with increasing bonding force, ultrasonic power and bonding time. However, combined with the presence of holes at especial parameters, the optimal ultrasonic bonding parameter is confirmed to be a bonding force of 23 gf, ultrasonic power of 75 mW and bonding time of 21 ms.展开更多
The demand for adopting neural networks in resource-constrained embedded devices is continuously increasing.Quantization is one of the most promising solutions to reduce computational cost and memory storage on embedd...The demand for adopting neural networks in resource-constrained embedded devices is continuously increasing.Quantization is one of the most promising solutions to reduce computational cost and memory storage on embedded devices.In order to reduce the complexity and overhead of deploying neural networks on Integeronly hardware,most current quantization methods use a symmetric quantization mapping strategy to quantize a floating-point neural network into an integer network.However,although symmetric quantization has the advantage of easier implementation,it is sub-optimal for cases where the range could be skewed and not symmetric.This often comes at the cost of lower accuracy.This paper proposed an activation redistribution-based hybrid asymmetric quantizationmethod for neural networks.The proposedmethod takes data distribution into consideration and can resolve the contradiction between the quantization accuracy and the ease of implementation,balance the trade-off between clipping range and quantization resolution,and thus improve the accuracy of the quantized neural network.The experimental results indicate that the accuracy of the proposed method is 2.02%and 5.52%higher than the traditional symmetric quantization method for classification and detection tasks,respectively.The proposed method paves the way for computationally intensive neural network models to be deployed on devices with limited computing resources.Codes will be available on https://github.com/ycjcy/Hybrid-Asymmetric-Quantization.展开更多
Peroxymonosulfate(PMS)activation and photocatalysis are effective technologies to remove organic pollutants,but the adsorption effect of the catalyst is usually unheeded in degradation process.Herein,a bifunctional ca...Peroxymonosulfate(PMS)activation and photocatalysis are effective technologies to remove organic pollutants,but the adsorption effect of the catalyst is usually unheeded in degradation process.Herein,a bifunctional catalyst of amorphous MoS_(x)(a-MoS_(x))with 3D layer-by-layer superstructure was synthesized by assembling basic active units[Mo_(3)S_(13)]^(2-)of MoS_(2).The large interlayer spacing and high exposure of active sites render a-MoS_(x)to have excellent synergy of adsorption and photo-assisted PMS activation for tetracycline(TC)degradation.Experiments and DFT calculation show that TC can be efficiently enriched on a-MoS_(x)by pore filling,π-πinteraction,hydrogen bonding and high adsorption energy.Subsequently,PMS can be quickly activated through electron transfer with a-MoS_(x),resulting in high TC degradation efficiency of 96.6%within 20 min.In addition,the synergistic mechanism of adsorption and photo-assisted PMS activation was explored,and the degradation pathway of TC was expounded.This work is inspirational for constructing bifunctional catalysts with superior synergistic adsorption and catalytic capabilities to remove refractory organic pollutants in water.展开更多
The quantization algorithm compresses the original network by reducing the numerical bit width of the model,which improves the computation speed. Because different layers have different redundancy and sensitivity to d...The quantization algorithm compresses the original network by reducing the numerical bit width of the model,which improves the computation speed. Because different layers have different redundancy and sensitivity to databit width. Reducing the data bit width will result in a loss of accuracy. Therefore, it is difficult to determinethe optimal bit width for different parts of the network with guaranteed accuracy. Mixed precision quantizationcan effectively reduce the amount of computation while keeping the model accuracy basically unchanged. In thispaper, a hardware-aware mixed precision quantization strategy optimal assignment algorithm adapted to low bitwidth is proposed, and reinforcement learning is used to automatically predict the mixed precision that meets theconstraints of hardware resources. In the state-space design, the standard deviation of weights is used to measurethe distribution difference of data, the execution speed feedback of simulated neural network accelerator inferenceis used as the environment to limit the action space of the agent, and the accuracy of the quantization model afterretraining is used as the reward function to guide the agent to carry out deep reinforcement learning training. Theexperimental results show that the proposed method obtains a suitable model layer-by-layer quantization strategyunder the condition that the computational resources are satisfied, and themodel accuracy is effectively improved.The proposed method has strong intelligence and certain universality and has strong application potential in thefield of mixed precision quantization and embedded neural network model deployment.展开更多
Dzyaloshinskii–Moriya interaction(DMI) is under extensive investigation considering its crucial status in chiral magnetic orders, such as Néel-type domain wall(DW) and skyrmions. It has been reported that the in...Dzyaloshinskii–Moriya interaction(DMI) is under extensive investigation considering its crucial status in chiral magnetic orders, such as Néel-type domain wall(DW) and skyrmions. It has been reported that the interfacial DMI originating from Rashba spin–orbit coupling(SOC) can be linearly tuned with strong external electric fields. In this work, we experimentally demonstrate that the strength of DMI exhibits rapid fluctuations, ranging from 10% to 30% of its original value, as a function of applied electric fields in Pt/Co/MgO heterostructures within the small field regime(< 10-2V/nm). Brillouin light scattering(BLS) experiments have been performed to measure DMI, and first-principles calculations show agreement with this observation, which can be explained by the variation in orbital hybridization at the Co/MgO interface in response to the weak electric fields. Our results on voltage control of DMI(VCDMI) suggest that research related to the voltage control of magnetic anisotropy for spin–orbit torque or the motion control of skyrmions might also have to consider the role of the external electric field on DMI as small voltages are generally used for the magnetoresistance detection.展开更多
The high critical electric field strength of Ga_(2)O_(3)enables higher operating voltages and reduced switching losses in power electronic devices.Suitable Schottky metals and epitaxial films are essential for further...The high critical electric field strength of Ga_(2)O_(3)enables higher operating voltages and reduced switching losses in power electronic devices.Suitable Schottky metals and epitaxial films are essential for further enhancing device performance.In this work,the fabrication of vertical Ga_(2)O_(3)barrier diodes with three different barrier metals was carried out on an n--Ga_(2)O_(3)homogeneous epitaxial film deposited on an n+-β-Ga_(2)O_(3)substrate by metal-organic chemical vapor deposition,excluding the use of edge terminals.The ideal factor,barrier height,specific on-resistance,and breakdown voltage characteristics of all devices were investigated at room temperature.In addition,the vertical Ga_(2)O_(3)barrier diodes achieve a higher breakdown volt-age and exhibit a reverse leakage as low as 4.82×10^(-8)A/cm^(2)by constructing a NiO/Ga_(2)O_(3)heterojunction.Therefore,Ga_(2)O_(3)power detailed investigations into Schottky barrier metal and NiO/Ga_(2)O_(3)heterojunction of Ga_(2)O_(3)homogeneous epitaxial films are of great research potential in high-efficiency,high-power,and high-reliability applications.展开更多
The data analysis of blasting sites has always been the research goal of relevant researchers.The rise of mobile blasting robots has aroused many researchers’interest in machine learning methods for target detection ...The data analysis of blasting sites has always been the research goal of relevant researchers.The rise of mobile blasting robots has aroused many researchers’interest in machine learning methods for target detection in the field of blasting.Serverless Computing can provide a variety of computing services for people without hardware foundations and rich software development experience,which has aroused people’s interest in how to use it in the field ofmachine learning.In this paper,we design a distributedmachine learning training application based on the AWS Lambda platform.Based on data parallelism,the data aggregation and training synchronization in Function as a Service(FaaS)are effectively realized.It also encrypts the data set,effectively reducing the risk of data leakage.We rent a cloud server and a Lambda,and then we conduct experiments to evaluate our applications.Our results indicate the effectiveness,rapidity,and economy of distributed training on FaaS.展开更多
The 28 nm process has a high cost-performance ratio and has gradually become the standard for the field of radiation-hardened devices.However,owing to the minimum physical gate length of only 35 nm,the physical area o...The 28 nm process has a high cost-performance ratio and has gradually become the standard for the field of radiation-hardened devices.However,owing to the minimum physical gate length of only 35 nm,the physical area of a standard 6T SRAM unit is approximately 0.16μm^(2),resulting in a significant enhancement of multi-cell charge-sharing effects.Multiple-cell upsets(MCUs)have become the primary physical mechanism behind single-event upsets(SEUs)in advanced nanometer node devices.The range of ionization track effects increases with higher ion energies,and spacecraft in orbit primarily experience SEUs caused by high-energy ions.However,ground accelerator experiments have mainly obtained low-energy ion irradiation data.Therefore,the impact of ion energy on the SEU cross section,charge collection mechanisms,and MCU patterns and quantities in advanced nanometer devices remains unclear.In this study,based on the experimental platform of the Heavy Ion Research Facility in Lanzhou,low-and high-energy heavy-ion beams were used to study the SEUs of 28 nm SRAM devices.The influence of ion energy on the charge collection processes of small-sensitive-volume devices,MCU patterns,and upset cross sections was obtained,and the applicable range of the inverse cosine law was clarified.The findings of this study are an important guide for the accurate evaluation of SEUs in advanced nanometer devices and for the development of radiation-hardening techniques.展开更多
The reentry trajectory planning for hypersonic vehicles is critical and challenging in the presence of numerous nonlinear equations of motion and path constraints, as well as guaranteed satisfaction of accuracy in mee...The reentry trajectory planning for hypersonic vehicles is critical and challenging in the presence of numerous nonlinear equations of motion and path constraints, as well as guaranteed satisfaction of accuracy in meeting all the specified boundary conditions. In the last ten years, many researchers have investigated various strategies to generate a feasible or optimal constrained reentry trajectory for hypersonic vehicles. This paper briefly reviews the new research efforts to promote the capability of reentry trajectory planning. The progress of the onboard reentry trajectory planning, reentry trajectory optimization, and landing footprint is summarized. The main challenges of reentry trajectory planning for hypersonic vehicles are analyzed, focusing on the rapid reentry trajectory optimization, complex geographic constraints, and coop- erative strategies.展开更多
This paper reports that a 4H-SiC MESFET （Metal Semiconductor Field Effect Transistor） large signal drain current model based on physical expressions has been developed to be used in CAD tools. The form of drain curr...This paper reports that a 4H-SiC MESFET （Metal Semiconductor Field Effect Transistor） large signal drain current model based on physical expressions has been developed to be used in CAD tools. The form of drain current model is based on semi-empirical MESFET model, and all parameters in this model are determined by physical parameters of 4H-SiC MESFET. The verification of the present model embedded in CAD tools is made, which shows a good agreement with measured data of large signal DC I-V characteristics, PAE （power added efficiency）, output power and gain.展开更多
Paint removal from steel structure is executed for shipyards of marine and offshore engineering.Due to environmental unfriendliness and unhealthy drawbacks of sand blasting technique, laser ablation technique is propo...Paint removal from steel structure is executed for shipyards of marine and offshore engineering.Due to environmental unfriendliness and unhealthy drawbacks of sand blasting technique, laser ablation technique is proposed as a substituting method.By absorbing high energy of the 1064 nm pulsed laser, the paint is vaporized quickly.The ablated debris is then collected by using a suction pump.Initial metal surface of the steel is exposed when laser beam irradiates perpendicularly and scans over it.The cleaned surface fulfills the requirements of surface preparation standards ISO 8501 of SA2.The adhesion is further characterized with pull-off test after carrying out painting with Jotamastic 87 aluminum paint.The repainting can be embedded onto the laser cleaned surface to bond much more tightly.The excellent adhesion strength of 20 MPa between repainted coating and the substrate is achieved, which is higher than what is required by shipyards applications.展开更多
Based on the heat diffusion equation of multilevel interconnects, a novel analytical thermal model for multilevel nano-scale interconnects considering the via effect is presented, which can compute quickly the tempera...Based on the heat diffusion equation of multilevel interconnects, a novel analytical thermal model for multilevel nano-scale interconnects considering the via effect is presented, which can compute quickly the temperature of multilevel interconnects, with substrate temperature given. Based on the proposed model and the 65 nm complementary metal oxide semiconductor （CMOS） process parameter, the temperature of nano-scale interconnects is computed. The computed results show that the via effect has a great effect on local interconnects, but the reduction of thermal conductivity has little effect on local interconnects. With the reduction of thermal conductivity or the increase of current density, however, the temperature of global interconnects rises greatly, which can result in a great deterioration in their performance. The proposed model can be applied to computer aided design （CAD） of very large-scale integrated circuits （VLSIs） in nano-scale technologies.展开更多
The effect of graphite surface modification on the thermal conductivity(TC) and bending strength of graphite flakes/Al composites(Gf/Al) prepared by gas pressure infiltration were investigated. Al3 Ni and Al4C3 phase ...The effect of graphite surface modification on the thermal conductivity(TC) and bending strength of graphite flakes/Al composites(Gf/Al) prepared by gas pressure infiltration were investigated. Al3 Ni and Al4C3 phase may form at the interface in Ni-coated Gf/Al and uncoated Gf/Al composites, respectively, while the Al-Cu compound cannot be observed in Cu-coated Gf/Al composites. The Cu and Ni coatings enhance TC and the bending strength of the composites in the meantime. TC of Cu-coated Gf/Al composites reach 515 Wm^-1·K^-1 with 75 vol% Gf, which are higher than that of Ni-coated Gf/Al. Meanwhile, due to Al3 Ni at the interface, the bending strength of Ni-coated Gf/Al composites are far more than those of the uncoated and Cu-coated Gf/Al with the same content of Gf. The results indicate that metal-coated Gf can effectively improve the interfacial bonding between Gf and Al.展开更多
In the existing models of estimating the yield and critical area, the defect outline is usually assumed to be circular, but the observed real defect outlines are irregular in shape. In this paper, estimation of the yi...In the existing models of estimating the yield and critical area, the defect outline is usually assumed to be circular, but the observed real defect outlines are irregular in shape. In this paper, estimation of the yield and critical area is made using the Monte Carlo technique and the relationship between the errors of yield estimated by circular defect and the rectangle degree of the defect is analysed. The rectangular model of a real defect is presented, and the yield model is provided correspondingly. The models take into account an outline similar to that of an original defect, the characteristics of two-dimensional distribution of defects, the feature of a layout routing, and the character of yield estimation. In order to make the models practicable, the critical area computations related to rectangular defect and regular （vertical or horizontal） routing are discussed. The critical areas associated with rectangular defect and non- regular routing are developed also, based on the mathematical morphology. The experimental results show that the new yield model may predict the yield caused by real defects more accurately than the circular model. It is significant that the yield is accurately estimated using the proposed model for IC metals.展开更多
A semi-insulating layer is obtained in n-type 4H-SiC by vanadium-ion implantation. A little higher resistivity is obtained by increasing the annealing temperature from 1450 to 1650 ℃. The resistivity at room temperat...A semi-insulating layer is obtained in n-type 4H-SiC by vanadium-ion implantation. A little higher resistivity is obtained by increasing the annealing temperature from 1450 to 1650 ℃. The resistivity at room temperature is as high as 7.6 ×10^6 Ω. cm. Significant redistribution of vanadium is not observed even after 1650 ℃ annealing. Temperaturedependent resistivity and optical absorption of V-implanted samples are measured. The activation energy of vanadium acceptor level is observed to be at about Ec - 1.1 eV.展开更多
The effects of adding small amounts of cerium(Ce) to Sn-3.3 Ag-0.2 Cu-4.7 Bi solder on microstructure,wettability characteristic,interfacial morphology and the growth of interfacial intermetallic compound(IMC) during ...The effects of adding small amounts of cerium(Ce) to Sn-3.3 Ag-0.2 Cu-4.7 Bi solder on microstructure,wettability characteristic,interfacial morphology and the growth of interfacial intermetallic compound(IMC) during thermal cycling were investigated by optical microscopy(OM),scanning electron microscopy(SEM) and solderability tester.It is found that the p-Sn phase,Ag_(3)Sn phase and Cu6 Sn5 phase in the solder are refined and the wetting force increases.Ce is an active element;it more easily accumulates at the solder/flux interface in the molten state,which decreases the interfacial surface energy and reduces the driving force for IMC formation on Cu substrate;therefore,the thickness of IMC at the solder/Cu interface decreases when appropriate Ce was added into the solder.Moreover,the Ce-containing solders have lower growth rate of interfacial IMC than solders without Ce during the thermal cycling between-55 and 125℃.When the Ce content is 0.03 wt% in the Sn-3.3 Ag-0.2 Cu-4.7 Bi solder,the solder has the best wettability and the minimum growth rate of interfacial IMC layer.展开更多
In current critical area models, it is generally assumed the defect outlines are circular and the conductors to be rectangle or the merger of rectangles. However, real defects and conductors associated with optimal la...In current critical area models, it is generally assumed the defect outlines are circular and the conductors to be rectangle or the merger of rectangles. However, real defects and conductors associated with optimal layout design exhibit a great variety of shapes. Based on mathematical morphology, a new critical area model is presented, which can be used to estimate the critical area of short circuit, open circuit and pinhole. Based on the new model, the efficient validity check algorithms are explored to extract critical areas of short circuit, open circuit and pinhole from layouts. The results of experiment on an approximate layout of 4 × 4 shifts register show that the new model predicts the critical areas accurately. These results suggest that the proposed model and algorithm could provide new approaches for yield prediction.展开更多
Low Voltage Differential Signaling (LVDS) has become a popular choice for high-speed serial links to conquer the bandwidth bottleneck of intra-chip data transmission. This paper presents the design and the implementat...Low Voltage Differential Signaling (LVDS) has become a popular choice for high-speed serial links to conquer the bandwidth bottleneck of intra-chip data transmission. This paper presents the design and the implementation of LVDS Input/Output (I/O) interface circuits in a standard 0.18 μm CMOS technology using thick gate oxide devices (3.3 V), fully compatible with LVDS standard. In the proposed transmitter, a novel Common-Mode FeedBack (CMFB)circuit is utilized to keep the common-mode output voltage stable over Process, supply Voltage and Temperature (PVT) variations. Because there are no area greedy resistors in the CMFB circuitry, the disadvantage of large die area in existing transmitter structures is avoided. To obtain sufficient gain, the receiver consists of three am- plifying stages: a voltage amplifying stage, a transconductance amplifying stage, and a transimpedance amplifying stage. And to exclude inner nodes with high RC time constant, shunt-shunt negative feedback is introduced in the receiver. A novel active inductor shunt peaking structure is used in the receiver to fulfill the stringent requirements of high speed and wide Common-Mode Input Region (CMIR) without voltage gain, power dissipation and silicon area penalty. Simulation results show that data rates of 2 Gbps and 2.5 Gbps are achieved for the transmitter and receiver with power con- sumption of 13.2 mW and 8.3 mW respectively.展开更多
This paper proposes a reasonable radiation-resistant composite channel structure for In P HEMTs.The simulation results show that the composite channel structure has excellent electrical properties due to increased mod...This paper proposes a reasonable radiation-resistant composite channel structure for In P HEMTs.The simulation results show that the composite channel structure has excellent electrical properties due to increased modulation doping efficiency and carrier confinement.Moreover,the direct current(DC)and radio frequency(RF)characteristics and their reliability between the single channel structure and the composite channel structure after 75-ke V proton irradiation are compared in detail.The results show that the composite channel structure has excellent radiation tolerance.Mechanism analysis demonstrates that the composite channel structure weakens the carrier removal effect.This phenomenon can account for the increase of native carrier and the decrease of defect capture rate.展开更多
基金Project(U2341254)supported by Ye Qisun Science Foundation of National Natural Science Foundation of ChinaProject(52475406)supported by the National Nature Science Foundation of ChinaProject(2024CY2-GJHX-32)supported by the Key R&D Program of Shaanxi Province,China。
文摘Effect of flip chip bonding parameters on microstructure at the interconnect interface and shear properties of 64.8Sn35.2Pb microbumps were investigated in this work.Results show that the main intermetallic compound(IMC)at the interconnect interface is(Ni,Cu)_(3)Sn_(4)phase,and meanwhile a small amount of(Cu,Ni)_(6)Sn_(5)phase with a size of 50−100 nm is formed around(Ni,Cu)_(3)Sn_(4)phase.The orientation relationship of[-1-56](Ni,Cu)_(3)Sn_(4)//[152](Cu,Ni)_(6)Sn_(5)and(601)(Ni,Cu)_(3)Sn_(4)//(-201)(Cu,Ni)_(6)Sn_(5)is found between these two phases,and the atomic matching at the interface of the two phases is low.The highest shear force of 77.3 gf is achieved in the 64.8Sn35.2Pb microbump at the peak temperature of 250℃and parameter V1 because dense IMCs and no cracks form at the interconnect interface.Two typical fracture modes of microbumps are determined as solder fracture and mixed fracture.The high thermal stress presenting in the thick IMCs layer induces crack initiation,and cracks propagate along theα/βphase boundaries in the Sn-Pb solder under shear force,leading to a mixed fracture mode in the microbumps.
基金Project(2022YFB3707201) supported by the National Key R&D Program of ChinaProject(U2341254) supported by the Ye Qisun Science Foundation of National Natural Science Foundation of China+1 种基金Projects(0604022GH0202143,0604022SH0201143) supported by the NPU Aoxiang Distinguished Young Scholars,ChinaProject supported by the Funding of Young Top-notch Talent of the National Ten Thousand Talent Program,China。
文摘Effects of ultrasonic bonding parameters on atomic diffusion, microstructure at the Al-Au interface, and shear strength of Al-Au ultrasonic bonding were investigated by the combining experiments and finite element (FE) simulation. The quantitative model of atomic diffusion, which is related to the ultrasonic bonding parameters, time and distance, is established to calculate the atomic diffusion of the Al-Au interface. The maximum relative error between the calculated and experimental fraction of Al atom is 7.35%, indicating high prediction accuracy of this model. During the process of ultrasonic bonding, Au8Al3 is the main intermetallic compound (IMC) at the Al-Au interface. With larger bonding forces, higher ultrasonic powers and longer bonding time, it is more difficult to remove the oxide particles from the Al-Au interface, which hinders the atomic diffusion. Therefore, the complicated stress state and the existence of oxide particles both promotes the formation of holes. The shear strength of Al-Au ultrasonic bonding increases with increasing bonding force, ultrasonic power and bonding time. However, combined with the presence of holes at especial parameters, the optimal ultrasonic bonding parameter is confirmed to be a bonding force of 23 gf, ultrasonic power of 75 mW and bonding time of 21 ms.
基金The Qian Xuesen Youth Innovation Foundation from China Aerospace Science and Technology Corporation(Grant Number 2022JY51).
文摘The demand for adopting neural networks in resource-constrained embedded devices is continuously increasing.Quantization is one of the most promising solutions to reduce computational cost and memory storage on embedded devices.In order to reduce the complexity and overhead of deploying neural networks on Integeronly hardware,most current quantization methods use a symmetric quantization mapping strategy to quantize a floating-point neural network into an integer network.However,although symmetric quantization has the advantage of easier implementation,it is sub-optimal for cases where the range could be skewed and not symmetric.This often comes at the cost of lower accuracy.This paper proposed an activation redistribution-based hybrid asymmetric quantizationmethod for neural networks.The proposedmethod takes data distribution into consideration and can resolve the contradiction between the quantization accuracy and the ease of implementation,balance the trade-off between clipping range and quantization resolution,and thus improve the accuracy of the quantized neural network.The experimental results indicate that the accuracy of the proposed method is 2.02%and 5.52%higher than the traditional symmetric quantization method for classification and detection tasks,respectively.The proposed method paves the way for computationally intensive neural network models to be deployed on devices with limited computing resources.Codes will be available on https://github.com/ycjcy/Hybrid-Asymmetric-Quantization.
基金supported by the National Natural Science Foundation of China(Nos.52370073,12274115)Program for Science and Technology Innovation Team in Universities of Henan Province(No.24IRTSTHN017)+3 种基金Natural Science Foundation of Henan Province(No.212300410336)Program for Science and Technology Innovation Talent in Universities of Henan Province(No.23HASTIT027)Key Scientific and Technological Project of Henan Province(No.222102320188)Key Project of Science and Technology Research of Henan Provincial Department of Education(No.21A430008)。
文摘Peroxymonosulfate(PMS)activation and photocatalysis are effective technologies to remove organic pollutants,but the adsorption effect of the catalyst is usually unheeded in degradation process.Herein,a bifunctional catalyst of amorphous MoS_(x)(a-MoS_(x))with 3D layer-by-layer superstructure was synthesized by assembling basic active units[Mo_(3)S_(13)]^(2-)of MoS_(2).The large interlayer spacing and high exposure of active sites render a-MoS_(x)to have excellent synergy of adsorption and photo-assisted PMS activation for tetracycline(TC)degradation.Experiments and DFT calculation show that TC can be efficiently enriched on a-MoS_(x)by pore filling,π-πinteraction,hydrogen bonding and high adsorption energy.Subsequently,PMS can be quickly activated through electron transfer with a-MoS_(x),resulting in high TC degradation efficiency of 96.6%within 20 min.In addition,the synergistic mechanism of adsorption and photo-assisted PMS activation was explored,and the degradation pathway of TC was expounded.This work is inspirational for constructing bifunctional catalysts with superior synergistic adsorption and catalytic capabilities to remove refractory organic pollutants in water.
文摘The quantization algorithm compresses the original network by reducing the numerical bit width of the model,which improves the computation speed. Because different layers have different redundancy and sensitivity to databit width. Reducing the data bit width will result in a loss of accuracy. Therefore, it is difficult to determinethe optimal bit width for different parts of the network with guaranteed accuracy. Mixed precision quantizationcan effectively reduce the amount of computation while keeping the model accuracy basically unchanged. In thispaper, a hardware-aware mixed precision quantization strategy optimal assignment algorithm adapted to low bitwidth is proposed, and reinforcement learning is used to automatically predict the mixed precision that meets theconstraints of hardware resources. In the state-space design, the standard deviation of weights is used to measurethe distribution difference of data, the execution speed feedback of simulated neural network accelerator inferenceis used as the environment to limit the action space of the agent, and the accuracy of the quantization model afterretraining is used as the reward function to guide the agent to carry out deep reinforcement learning training. Theexperimental results show that the proposed method obtains a suitable model layer-by-layer quantization strategyunder the condition that the computational resources are satisfied, and themodel accuracy is effectively improved.The proposed method has strong intelligence and certain universality and has strong application potential in thefield of mixed precision quantization and embedded neural network model deployment.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.61627813,62204018,and 61571023)the Beijing Municipal Science and Technology Project(Grant No.Z201100004220002)+2 种基金the National Key Technology Program of China(Grant No.2017ZX01032101)the Program of Introducing Talents of Discipline to Universities in China(Grant No.B16001)the VR Innovation Platform from Qingdao Science and Technology Commission.
文摘Dzyaloshinskii–Moriya interaction(DMI) is under extensive investigation considering its crucial status in chiral magnetic orders, such as Néel-type domain wall(DW) and skyrmions. It has been reported that the interfacial DMI originating from Rashba spin–orbit coupling(SOC) can be linearly tuned with strong external electric fields. In this work, we experimentally demonstrate that the strength of DMI exhibits rapid fluctuations, ranging from 10% to 30% of its original value, as a function of applied electric fields in Pt/Co/MgO heterostructures within the small field regime(< 10-2V/nm). Brillouin light scattering(BLS) experiments have been performed to measure DMI, and first-principles calculations show agreement with this observation, which can be explained by the variation in orbital hybridization at the Co/MgO interface in response to the weak electric fields. Our results on voltage control of DMI(VCDMI) suggest that research related to the voltage control of magnetic anisotropy for spin–orbit torque or the motion control of skyrmions might also have to consider the role of the external electric field on DMI as small voltages are generally used for the magnetoresistance detection.
基金supported by BUPT Excellent Ph.D. Students Foundation (CX2023301)in part by the National Natural Science Foundation of China (62204019)
文摘The high critical electric field strength of Ga_(2)O_(3)enables higher operating voltages and reduced switching losses in power electronic devices.Suitable Schottky metals and epitaxial films are essential for further enhancing device performance.In this work,the fabrication of vertical Ga_(2)O_(3)barrier diodes with three different barrier metals was carried out on an n--Ga_(2)O_(3)homogeneous epitaxial film deposited on an n+-β-Ga_(2)O_(3)substrate by metal-organic chemical vapor deposition,excluding the use of edge terminals.The ideal factor,barrier height,specific on-resistance,and breakdown voltage characteristics of all devices were investigated at room temperature.In addition,the vertical Ga_(2)O_(3)barrier diodes achieve a higher breakdown volt-age and exhibit a reverse leakage as low as 4.82×10^(-8)A/cm^(2)by constructing a NiO/Ga_(2)O_(3)heterojunction.Therefore,Ga_(2)O_(3)power detailed investigations into Schottky barrier metal and NiO/Ga_(2)O_(3)heterojunction of Ga_(2)O_(3)homogeneous epitaxial films are of great research potential in high-efficiency,high-power,and high-reliability applications.
文摘The data analysis of blasting sites has always been the research goal of relevant researchers.The rise of mobile blasting robots has aroused many researchers’interest in machine learning methods for target detection in the field of blasting.Serverless Computing can provide a variety of computing services for people without hardware foundations and rich software development experience,which has aroused people’s interest in how to use it in the field ofmachine learning.In this paper,we design a distributedmachine learning training application based on the AWS Lambda platform.Based on data parallelism,the data aggregation and training synchronization in Function as a Service(FaaS)are effectively realized.It also encrypts the data set,effectively reducing the risk of data leakage.We rent a cloud server and a Lambda,and then we conduct experiments to evaluate our applications.Our results indicate the effectiveness,rapidity,and economy of distributed training on FaaS.
基金supported by the National Natural Science Foundation of China(Nos.12105341 and 12035019)the opening fund of Key Laboratory of Silicon Device and Technology,Chinese Academy of Sciences(No.KLSDTJJ2022-3).
文摘The 28 nm process has a high cost-performance ratio and has gradually become the standard for the field of radiation-hardened devices.However,owing to the minimum physical gate length of only 35 nm,the physical area of a standard 6T SRAM unit is approximately 0.16μm^(2),resulting in a significant enhancement of multi-cell charge-sharing effects.Multiple-cell upsets(MCUs)have become the primary physical mechanism behind single-event upsets(SEUs)in advanced nanometer node devices.The range of ionization track effects increases with higher ion energies,and spacecraft in orbit primarily experience SEUs caused by high-energy ions.However,ground accelerator experiments have mainly obtained low-energy ion irradiation data.Therefore,the impact of ion energy on the SEU cross section,charge collection mechanisms,and MCU patterns and quantities in advanced nanometer devices remains unclear.In this study,based on the experimental platform of the Heavy Ion Research Facility in Lanzhou,low-and high-energy heavy-ion beams were used to study the SEUs of 28 nm SRAM devices.The influence of ion energy on the charge collection processes of small-sensitive-volume devices,MCU patterns,and upset cross sections was obtained,and the applicable range of the inverse cosine law was clarified.The findings of this study are an important guide for the accurate evaluation of SEUs in advanced nanometer devices and for the development of radiation-hardening techniques.
基金supported by the National Natural Science Foundation of China(6127334961203223+1 种基金61175109)the Innovation Foundation of BUAA for Ph.D.Graduates(YWF-14-YJSY-013)
文摘The reentry trajectory planning for hypersonic vehicles is critical and challenging in the presence of numerous nonlinear equations of motion and path constraints, as well as guaranteed satisfaction of accuracy in meeting all the specified boundary conditions. In the last ten years, many researchers have investigated various strategies to generate a feasible or optimal constrained reentry trajectory for hypersonic vehicles. This paper briefly reviews the new research efforts to promote the capability of reentry trajectory planning. The progress of the onboard reentry trajectory planning, reentry trajectory optimization, and landing footprint is summarized. The main challenges of reentry trajectory planning for hypersonic vehicles are analyzed, focusing on the rapid reentry trajectory optimization, complex geographic constraints, and coop- erative strategies.
文摘This paper reports that a 4H-SiC MESFET （Metal Semiconductor Field Effect Transistor） large signal drain current model based on physical expressions has been developed to be used in CAD tools. The form of drain current model is based on semi-empirical MESFET model, and all parameters in this model are determined by physical parameters of 4H-SiC MESFET. The verification of the present model embedded in CAD tools is made, which shows a good agreement with measured data of large signal DC I-V characteristics, PAE （power added efficiency）, output power and gain.
基金supported by the National Natural Science Foundation of China (U1609209)National Natural Science Foundation of China (61605162)+2 种基金NSFC-Liaoning Province united foundation (U1608259)National Natural Science Foundation of China (51501219)the financial support from the China Scholarship Council
文摘Paint removal from steel structure is executed for shipyards of marine and offshore engineering.Due to environmental unfriendliness and unhealthy drawbacks of sand blasting technique, laser ablation technique is proposed as a substituting method.By absorbing high energy of the 1064 nm pulsed laser, the paint is vaporized quickly.The ablated debris is then collected by using a suction pump.Initial metal surface of the steel is exposed when laser beam irradiates perpendicularly and scans over it.The cleaned surface fulfills the requirements of surface preparation standards ISO 8501 of SA2.The adhesion is further characterized with pull-off test after carrying out painting with Jotamastic 87 aluminum paint.The repainting can be embedded onto the laser cleaned surface to bond much more tightly.The excellent adhesion strength of 20 MPa between repainted coating and the substrate is achieved, which is higher than what is required by shipyards applications.
基金Project supported by the National Natural Science Foundation of China (Grant Nos 60676009 and 60725415)the National High Technology Research and Development Program of China (Grant Nos 2009AA01Z258 and 2009AA01Z260)
文摘Based on the heat diffusion equation of multilevel interconnects, a novel analytical thermal model for multilevel nano-scale interconnects considering the via effect is presented, which can compute quickly the temperature of multilevel interconnects, with substrate temperature given. Based on the proposed model and the 65 nm complementary metal oxide semiconductor （CMOS） process parameter, the temperature of nano-scale interconnects is computed. The computed results show that the via effect has a great effect on local interconnects, but the reduction of thermal conductivity has little effect on local interconnects. With the reduction of thermal conductivity or the increase of current density, however, the temperature of global interconnects rises greatly, which can result in a great deterioration in their performance. The proposed model can be applied to computer aided design （CAD） of very large-scale integrated circuits （VLSIs） in nano-scale technologies.
基金Funded by the Research Fund of the State Key Laboratory of Solidification Processing(NWPU),China(No.126-QP-2015).
文摘The effect of graphite surface modification on the thermal conductivity(TC) and bending strength of graphite flakes/Al composites(Gf/Al) prepared by gas pressure infiltration were investigated. Al3 Ni and Al4C3 phase may form at the interface in Ni-coated Gf/Al and uncoated Gf/Al composites, respectively, while the Al-Cu compound cannot be observed in Cu-coated Gf/Al composites. The Cu and Ni coatings enhance TC and the bending strength of the composites in the meantime. TC of Cu-coated Gf/Al composites reach 515 Wm^-1·K^-1 with 75 vol% Gf, which are higher than that of Ni-coated Gf/Al. Meanwhile, due to Al3 Ni at the interface, the bending strength of Ni-coated Gf/Al composites are far more than those of the uncoated and Cu-coated Gf/Al with the same content of Gf. The results indicate that metal-coated Gf can effectively improve the interfacial bonding between Gf and Al.
文摘In the existing models of estimating the yield and critical area, the defect outline is usually assumed to be circular, but the observed real defect outlines are irregular in shape. In this paper, estimation of the yield and critical area is made using the Monte Carlo technique and the relationship between the errors of yield estimated by circular defect and the rectangle degree of the defect is analysed. The rectangular model of a real defect is presented, and the yield model is provided correspondingly. The models take into account an outline similar to that of an original defect, the characteristics of two-dimensional distribution of defects, the feature of a layout routing, and the character of yield estimation. In order to make the models practicable, the critical area computations related to rectangular defect and regular （vertical or horizontal） routing are discussed. The critical areas associated with rectangular defect and non- regular routing are developed also, based on the mathematical morphology. The experimental results show that the new yield model may predict the yield caused by real defects more accurately than the circular model. It is significant that the yield is accurately estimated using the proposed model for IC metals.
基金Project supported by the National Natural Science Foundation of China （Grant No 60376001）, the National Basic Research Program of China （Grant No 2002CB311904） and the National Defense Basic Research Program of China （Grant No 51327020202）. Acknowledgments The authors would like to thank Li Cheng-Ji and Ye Xiao-Ling of Institute of Semiconductors, Chinese Academy of Sciences for measuring the temperaturedependent resistivity and absorption, respectively, and they also thank Ma Nong-Nong at the Centre of Electronic Materials Characterization of Tianjin Electronic Materials Research Institute for performing SIMS measurements.
文摘A semi-insulating layer is obtained in n-type 4H-SiC by vanadium-ion implantation. A little higher resistivity is obtained by increasing the annealing temperature from 1450 to 1650 ℃. The resistivity at room temperature is as high as 7.6 ×10^6 Ω. cm. Significant redistribution of vanadium is not observed even after 1650 ℃ annealing. Temperaturedependent resistivity and optical absorption of V-implanted samples are measured. The activation energy of vanadium acceptor level is observed to be at about Ec - 1.1 eV.
基金financially supported by the National Science and Technology Major Project of China(No.2011ZX02607)。
文摘The effects of adding small amounts of cerium(Ce) to Sn-3.3 Ag-0.2 Cu-4.7 Bi solder on microstructure,wettability characteristic,interfacial morphology and the growth of interfacial intermetallic compound(IMC) during thermal cycling were investigated by optical microscopy(OM),scanning electron microscopy(SEM) and solderability tester.It is found that the p-Sn phase,Ag_(3)Sn phase and Cu6 Sn5 phase in the solder are refined and the wetting force increases.Ce is an active element;it more easily accumulates at the solder/flux interface in the molten state,which decreases the interfacial surface energy and reduces the driving force for IMC formation on Cu substrate;therefore,the thickness of IMC at the solder/Cu interface decreases when appropriate Ce was added into the solder.Moreover,the Ce-containing solders have lower growth rate of interfacial IMC than solders without Ce during the thermal cycling between-55 and 125℃.When the Ce content is 0.03 wt% in the Sn-3.3 Ag-0.2 Cu-4.7 Bi solder,the solder has the best wettability and the minimum growth rate of interfacial IMC layer.
文摘In current critical area models, it is generally assumed the defect outlines are circular and the conductors to be rectangle or the merger of rectangles. However, real defects and conductors associated with optimal layout design exhibit a great variety of shapes. Based on mathematical morphology, a new critical area model is presented, which can be used to estimate the critical area of short circuit, open circuit and pinhole. Based on the new model, the efficient validity check algorithms are explored to extract critical areas of short circuit, open circuit and pinhole from layouts. The results of experiment on an approximate layout of 4 × 4 shifts register show that the new model predicts the critical areas accurately. These results suggest that the proposed model and algorithm could provide new approaches for yield prediction.
文摘Low Voltage Differential Signaling (LVDS) has become a popular choice for high-speed serial links to conquer the bandwidth bottleneck of intra-chip data transmission. This paper presents the design and the implementation of LVDS Input/Output (I/O) interface circuits in a standard 0.18 μm CMOS technology using thick gate oxide devices (3.3 V), fully compatible with LVDS standard. In the proposed transmitter, a novel Common-Mode FeedBack (CMFB)circuit is utilized to keep the common-mode output voltage stable over Process, supply Voltage and Temperature (PVT) variations. Because there are no area greedy resistors in the CMFB circuitry, the disadvantage of large die area in existing transmitter structures is avoided. To obtain sufficient gain, the receiver consists of three am- plifying stages: a voltage amplifying stage, a transconductance amplifying stage, and a transimpedance amplifying stage. And to exclude inner nodes with high RC time constant, shunt-shunt negative feedback is introduced in the receiver. A novel active inductor shunt peaking structure is used in the receiver to fulfill the stringent requirements of high speed and wide Common-Mode Input Region (CMIR) without voltage gain, power dissipation and silicon area penalty. Simulation results show that data rates of 2 Gbps and 2.5 Gbps are achieved for the transmitter and receiver with power con- sumption of 13.2 mW and 8.3 mW respectively.
基金the National Natural Science Foundation of China(Grant No.11775191)the Natural Science Foundation of Henan Province,China(Grant No.202300410379)+2 种基金the Promotion Funding for Excellent Young Backbone Teacher of Henan Province,China(Grant No.2019GGJS017)Key Technologies Research and Development Program of Henan Province,China(Grant No.202102210321)the Promotion Project for Physics Discipline in Zhengzhou University,China(Grant No.2018WLTJ01)。
文摘This paper proposes a reasonable radiation-resistant composite channel structure for In P HEMTs.The simulation results show that the composite channel structure has excellent electrical properties due to increased modulation doping efficiency and carrier confinement.Moreover,the direct current(DC)and radio frequency(RF)characteristics and their reliability between the single channel structure and the composite channel structure after 75-ke V proton irradiation are compared in detail.The results show that the composite channel structure has excellent radiation tolerance.Mechanism analysis demonstrates that the composite channel structure weakens the carrier removal effect.This phenomenon can account for the increase of native carrier and the decrease of defect capture rate.
