The understanding of the behavior of chlorine in silicon is useful for several applications, for example, plasma etching of silicon, a proposed technique for electronic device development. In the present study, specim...The understanding of the behavior of chlorine in silicon is useful for several applications, for example, plasma etching of silicon, a proposed technique for electronic device development. In the present study, specimens of silicon (p-type) were implanted at room temperature with chlorine ions to four successfully increasing doses of 1×1015(40 keV and 80 keV), 5×1015(100 keV), 1×l016(100 keV), and 5×l016(100 keV) Cl+ ions/cm2.展开更多
In this work we present a model in an effort to give an explanation of the observed cross-sectional features described as follows of the bubble layer of the intermediate dose regime (Fig.1) in our recent TEM study of ...In this work we present a model in an effort to give an explanation of the observed cross-sectional features described as follows of the bubble layer of the intermediate dose regime (Fig.1) in our recent TEM study of helium-implanted 4H-SiC.1. Sharp boundaries of the bubble layer-helium bubbles were formed in a well-defined depth region,展开更多
文摘The understanding of the behavior of chlorine in silicon is useful for several applications, for example, plasma etching of silicon, a proposed technique for electronic device development. In the present study, specimens of silicon (p-type) were implanted at room temperature with chlorine ions to four successfully increasing doses of 1×1015(40 keV and 80 keV), 5×1015(100 keV), 1×l016(100 keV), and 5×l016(100 keV) Cl+ ions/cm2.
文摘In this work we present a model in an effort to give an explanation of the observed cross-sectional features described as follows of the bubble layer of the intermediate dose regime (Fig.1) in our recent TEM study of helium-implanted 4H-SiC.1. Sharp boundaries of the bubble layer-helium bubbles were formed in a well-defined depth region,
