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Dual-mode All-PEDOT:PSS Organic Electrochemical Transistors:Enzyme/Metal-free Platform for Ultrasensitive Multiplexed Biosensing of Biomarkers
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作者 Xiao-Fang Liu Jia-Hui Lai +8 位作者 Cheng Liu Pei-Pei Liu Yin-Xiu Zuo Huan-Huan Qiu Rong-Ri Tan Jing Li Yu-Kou Du Jing-Kun Xu Feng-Xing Jiang 《Chinese Journal of Polymer Science》 2026年第2期371-380,I0009,共11页
Glucose,ascorbic acid(AA),uric acid(UA),and dopamine(DA)are vital biomarkers whose dynamic concentrations correlate with critical diseases;however,multiplexed detection remains challenging for conventional electrochem... Glucose,ascorbic acid(AA),uric acid(UA),and dopamine(DA)are vital biomarkers whose dynamic concentrations correlate with critical diseases;however,multiplexed detection remains challenging for conventional electrochemical sensors because of their limited sensitivity and selectivity.Here,we present a millimeter-scale all-poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate)(PEDOT:PSS)organic electrochemical transistor(OECT)platform that integrates dual-mode sensing with enzyme/metal-free operation for ultrasensitive biomarker monitoring.By engineering polycrystalline PEDOT:PSS channels via H_2 SO_4 post-treatment,the device achieves record-high conductivity(about(2312.0±29.9)S·cm^(–1)),maximum transconductance(about(2.82±0.12)mS),and on/off ratio(about 210.0±7.8),enabling signal amplification at low gate voltages.The dual-mode strategy combines the selectivity of electrochemistry with the sensitivity of OECTs,realizing simultaneous detection of glucose,AA,UA,and DA with clinical-level sensitivity:detection limits down to 8 nmol·L^(–1)(glucose),0.5 nmol·L^(–1)(AA),5 nmol·L^(–1)(DA),and 0.5 nmol·L^(–1)(UA).Validation using human urine samples yielded recovery rates of 94%–114%.This flexible sensing platform provides a new pathway for the development of wearable biosensors for precision diagnostics. 展开更多
关键词 DUAL-MODE Electrochemistry Organic electrochemical transistors(OECTs) Organic biosensor POST-TREATMENT
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融合Transformer与DF-GAN的文本生成图像方法
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作者 马静 车进 孙末贤 《计算机工程》 北大核心 2026年第2期413-422,共10页
文本生成图像任务中的文本编码器不能深度挖掘文本信息,导致后续生成的图像语义不一致。针对该问题,提出一种DXC-GAN文本生成图像方法。引入Transformer系列中的XLNet(Xtra Long Network)预训练模型替换原始文本编码器,捕获大量文本的... 文本生成图像任务中的文本编码器不能深度挖掘文本信息,导致后续生成的图像语义不一致。针对该问题,提出一种DXC-GAN文本生成图像方法。引入Transformer系列中的XLNet(Xtra Long Network)预训练模型替换原始文本编码器,捕获大量文本的先验知识,实现对上下文信息的深度挖掘。添加CBAM(Convolutional Block Attention Module)注意力模块,使生成器更加关注图像中的重要信息,从而解决生成图像细节不完整和空间结构错误问题。在判别器中引入对比损失,与模型中匹配感知梯度惩罚和单向输出结合,使得相同语义图像之间更加接近,不同语义图像之间更加疏远,从而增强文本与生成图像之间的语义一致性。实验结果表明:与DF-GAN相对比,DXC-GAN在CUB数据集上的IS(Inception Score)与FID(Fréchet Inception Distance)分别提升了4.42%和17.96%;在Oxford-102数据集上,IS为3.97,FID为37.82;相较于DF-GAN,DXC-GAN在鸟类图像生成方面有效避免了多头少脚等畸形问题,同时在花卉图像生成上也显著减少了花瓣残缺等图像质量问题;此外,DXC-GAN还增强了文本与图像的对齐性,显著提升了图像的完整度和生成效果。 展开更多
关键词 生成对抗网络 文本生成图像 XLNet CBAM 对比损失
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高阻Si衬底上预铺Al工艺对GaN材料晶体质量和射频损耗影响研究
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作者 杨乾坤 彭大青 +3 位作者 李传皓 张东国 王克超 李忠辉 《固体电子学研究与进展》 2026年第1期6-10,共5页
采用金属有机化学气相沉积(Metal-organic chemical vapor deposition,MOCVD)技术在高阻Si(111)衬底上生长了氮化物材料,研究衬底的预铺Al工艺对衬底表面形貌、氮化镓结晶质量及射频损耗等的影响。结果表明,采用低温低流量长时间的预铺A... 采用金属有机化学气相沉积(Metal-organic chemical vapor deposition,MOCVD)技术在高阻Si(111)衬底上生长了氮化物材料,研究衬底的预铺Al工艺对衬底表面形貌、氮化镓结晶质量及射频损耗等的影响。结果表明,采用低温低流量长时间的预铺Al工艺,抑制了表面Al聚集物的形成,减少了AlN表面坑,提升了Si衬底上GaN材料的晶体质量。基于优化的预铺Al工艺,GaN(002)/(102)半高宽达到391 arcsec/510 arcsec,5 GHz下射频损耗为0.16 dB/mm,25 GHz下射频损耗为0.37 dB/mm。 展开更多
关键词 硅基氮化镓 预铺铝 射频损耗 晶体质量
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高功率GaN基蓝光二极管激光器性能退化实验研究
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作者 谢鹏飞 张永刚 +6 位作者 王丞乾 吕文强 武德勇 郭林辉 雷军 王昭 高松信 《强激光与粒子束》 北大核心 2026年第1期1-7,共7页
高功率GaN基蓝光二极管激光器在工业加工、铜材料焊接、3D打印和水下激光通信等技术领域有着广泛的应用前景。蓝光二极管激光芯片COS单元器件具有热阻低和尺寸小的优点,但是该器件存在可靠性较低的问题,导致其在工业化应用中受到一定限... 高功率GaN基蓝光二极管激光器在工业加工、铜材料焊接、3D打印和水下激光通信等技术领域有着广泛的应用前景。蓝光二极管激光芯片COS单元器件具有热阻低和尺寸小的优点,但是该器件存在可靠性较低的问题,导致其在工业化应用中受到一定限制,因此对其性能退化因素进行深入研究。基于光学显微技术、扫描电子显微表征和能谱分析手段对经过长时老化考核后器件的性能退化因素进行分析研究。实验研究和分析表明,GaN基体材料缺陷、腔面多余物沉积和光化学腐蚀是导致蓝光二极管激光芯片性能退化的主因,同时良好的气密性封装可提高二极管激光芯片的可靠性。 展开更多
关键词 高功率gan蓝光二极管激光器 性能退化 二极管激光器封装 气密封
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时频双域注意力机制GAN的电磁信号降噪
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作者 边杏宾 石森 +1 位作者 胡志勇 马俊明 《计算机系统应用》 2026年第3期219-230,共12页
在电磁信息安全领域,电磁泄漏红信号的检测受电磁噪声干扰影响严重.传统降噪方法在处理非平稳信号和复杂噪声环境时存在局限性.提出一种基于生成对抗网络(GAN)的降噪方法,通过生成器与判别器的对抗学习实现高效降噪.针对电磁信号的非平... 在电磁信息安全领域,电磁泄漏红信号的检测受电磁噪声干扰影响严重.传统降噪方法在处理非平稳信号和复杂噪声环境时存在局限性.提出一种基于生成对抗网络(GAN)的降噪方法,通过生成器与判别器的对抗学习实现高效降噪.针对电磁信号的非平稳特性设计了时频双域注意力机制(time-frequency dual-domain attention mechanism, TF-DAM),生成器采用基于TF-DAM改进的U-Net架构,结合残差网络和dropout层增强泛化能力,利用编码器-解码器结构和跳跃连接保留信号细节,训练过程中采用动态调整损失权重的策略提高训练效率和降噪效果.实验表明,该方法在信噪比提升和细节保留上优于传统方法,在非平稳信号处理中表现突出.本研究为电磁信号降噪提供了新思路,具有较高应用价值. 展开更多
关键词 非平稳电磁信号 生成对抗网络 时频双域注意力机制 U-Net改进架构 损失权重动态调整
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Recent progress in organic optoelectronic synaptic transistor arrays:fabrication strategies and innovative applications of system integration 被引量:1
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作者 Pu Guo Junyao Zhang Jia Huang 《Journal of Semiconductors》 2025年第2期72-86,共15页
The rapid growth of artificial intelligence has accelerated data generation,which increasingly exposes the limitations faced by traditional computational architectures,particularly in terms of energy consumption and d... The rapid growth of artificial intelligence has accelerated data generation,which increasingly exposes the limitations faced by traditional computational architectures,particularly in terms of energy consumption and data latency.In contrast,data-centric computing that integrates processing and storage has the potential of reducing latency and energy usage.Organic optoelectronic synaptic transistors have emerged as one type of promising devices to implement the data-centric com-puting paradigm owing to their superiority of flexibility,low cost,and large-area fabrication.However,sophisticated functions including vector-matrix multiplication that a single device can achieve are limited.Thus,the fabrication and utilization of organic optoelectronic synaptic transistor arrays(OOSTAs)are imperative.Here,we summarize the recent advances in OOSTAs.Various strategies for manufacturing OOSTAs are introduced,including coating and casting,physical vapor deposition,printing,and photolithography.Furthermore,innovative applications of the OOSTA system integration are discussed,including neuromor-phic visual systems and neuromorphic computing systems.At last,challenges and future perspectives of utilizing OOSTAs in real-world applications are discussed. 展开更多
关键词 organic transistor arrays optoelectronic synaptic transistors neuromorphic systems system integration
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基于缓变复合沟道的高线性GaN HEMT仿真研究
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作者 李世权 蔡利康 +1 位作者 林罡 章军云 《电子技术应用》 2026年第1期43-47,共5页
基于半导体工艺与器件模拟工具(TCAD)提出并仿真了一种基于缓变组分AlGaN和InGaN复合沟道的高线性GaN HEMT器件,该结构的复合沟道层形成了三维电子气和二维电子气双沟道分布,器件栅压摆幅高达4.1 V,比常规突变异质结HEMT提高2.2 V。器... 基于半导体工艺与器件模拟工具(TCAD)提出并仿真了一种基于缓变组分AlGaN和InGaN复合沟道的高线性GaN HEMT器件,该结构的复合沟道层形成了三维电子气和二维电子气双沟道分布,器件栅压摆幅高达4.1 V,比常规突变异质结HEMT提高2.2 V。器件跨导的二阶导数的峰值比常规器件的低大约56%,显示其优越的抑制三阶互调的能力。另外,还探究了自热效应对器件线性度的影响。所提出的器件结构在高线性应用领域具有良好的应用前景。 展开更多
关键词 线性度 缓变沟道 栅压摆幅 gan HEMT 跨导
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应力释放对InGaN/GaN量子阱有源区发光特性的影响机制
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作者 郭一庸 武智波 +3 位作者 徐昊一 李长富 高渊 冀子武 《聊城大学学报(自然科学版)》 2026年第2期249-254,共6页
制备了两个不同的绿光InGaN/GaN量子阱(QW)结构(具有和不具有应力释放层),研究了其电致发光(EL)的注入电流依赖性和光致发光(PL)的温度依赖性。EL测量结果显示,与不具有应力释放层的QW结构(S1)相比,具有应力释放层的QW结构(S2)有一个较... 制备了两个不同的绿光InGaN/GaN量子阱(QW)结构(具有和不具有应力释放层),研究了其电致发光(EL)的注入电流依赖性和光致发光(PL)的温度依赖性。EL测量结果显示,与不具有应力释放层的QW结构(S1)相比,具有应力释放层的QW结构(S2)有一个较强的EL强度、显著的能量红移和一个较小的效率下垂;而PL测量结果则显示了S2比S1有更少的非辐射中心、更大的活化能和更高的内量子效率。这些结果表明,应力释放层的导入不仅缓解了有源区的应力、增加了In原子的并入,还提高了其有源区的结构质量、增强了其局域效果,同时降低了其电子泄露。这一解释得到了高分辨率X射线衍射测量结果的证实,结果显示S2比S1有更低的位错密度和更好的结构/结晶质量。 展开更多
关键词 Ingan/gan量子阱 应力释放层 电致发光 光致发光 效率下垂 内量子效率
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Reconfigurable organic ambipolar optoelectronic synaptic transistor for information security access 被引量:1
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作者 Xinqi Ma Wenbin Zhang +11 位作者 Qi Zheng Wenbiao Niu Zherui Zhao Kui Zhou Meng Zhang Shuangmei Xue Liangchao Guo Yan Yan Guanglong Ding Suting Han Vellaisamy A.L.Roy Ye Zhou 《Journal of Semiconductors》 2025年第2期133-142,共10页
In this data explosion era,ensuring the secure storage,access,and transmission of information is imperative,encom-passing all aspects ranging from safeguarding personal devices to formulating national information secu... In this data explosion era,ensuring the secure storage,access,and transmission of information is imperative,encom-passing all aspects ranging from safeguarding personal devices to formulating national information security strategies.Leverag-ing the potential offered by dual-type carriers for transportation and employing optical modulation techniques to develop high reconfigurable ambipolar optoelectronic transistors enables effective implementation of information destruction after read-ing,thereby guaranteeing data security.In this study,a reconfigurable ambipolar optoelectronic synaptic transistor based on poly(3-hexylthiophene)(P3HT)and poly[[N,N-bis(2-octyldodecyl)-napthalene-1,4,5,8-bis(dicarboximide)-2,6-diyl]-alt-5,5′-(2,2′-bithiophene)](N2200)blend film was fabricated through solution-processed method.The resulting transistor exhib-ited a relatively large ON/OFF ratio of 10^(3) in both n-and p-type regions,and tunable photoconductivity after light illumination,particularly with green light.The photo-generated carriers could be effectively trapped under the gate bias,indicating its poten-tial application in mimicking synaptic behaviors.Furthermore,the synaptic plasticity,including volatile/non-volatile and excita-tory/inhibitory characteristics,could be finely modulated by electrical and optical stimuli.These optoelectronic reconfigurable properties enable the realization of information light assisted burn after reading.This study not only offers valuable insights for the advancement of high-performance ambipolar organic optoelectronic synaptic transistors but also presents innovative ideas for the future information security access systems. 展开更多
关键词 RECONFIGURABLE AMBIPOLAR OPTOELECTRONIC synaptic transistor light assisted burn after reading
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MOS电容开裂导致GaN功率放大器失效分析
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作者 张亚彬 徐博能 +1 位作者 贡茜 崔洪波 《电子工艺技术》 2026年第2期32-34,共3页
针对某Ga N功率放大器件MOS电容组装过程中开裂的问题进行分析,通过对失效样品外观的观察和断裂形貌分析,在MOS电容断裂面发现有明显的贝壳纹和河流花样形貌。根据解理断裂的特征分析出裂纹源的位置与电容器意外受力点重合,借助格雷菲... 针对某Ga N功率放大器件MOS电容组装过程中开裂的问题进行分析,通过对失效样品外观的观察和断裂形貌分析,在MOS电容断裂面发现有明显的贝壳纹和河流花样形貌。根据解理断裂的特征分析出裂纹源的位置与电容器意外受力点重合,借助格雷菲斯原理和相关理论研究解释了微裂纹扩展导致MOS电容器失效的机理,采用模拟试验的方案复现MOS电容失效,形貌与失效件基本吻合,得出该MOS电容器失效的根本原因是MOS电容存在微裂纹和应力变化。 展开更多
关键词 MOS电容开裂 微裂纹 解理断裂 gan功率器件
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多尺度融合的AOT-GAN网络电成像空白条带智能填充
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作者 黄露逸 王飞 +1 位作者 孔令松 姜启书 《煤田地质与勘探》 北大核心 2026年第2期226-234,共9页
【目的】针对电成像图因仪器极板分布与推靠机制导致的井眼覆盖不全、存在空白条带问题,为克服传统填充方法在强非均质地层中易失真、难以保持裂缝等精细结构的局限,采用基于生成对抗网络的AOT-GAN网络对空白条带进行填充,以实现高精度... 【目的】针对电成像图因仪器极板分布与推靠机制导致的井眼覆盖不全、存在空白条带问题,为克服传统填充方法在强非均质地层中易失真、难以保持裂缝等精细结构的局限,采用基于生成对抗网络的AOT-GAN网络对空白条带进行填充,以实现高精度、高保真的信息重建。【方法】基于原始电成像图与CIFLog全井眼填充图构建高质量数据集,在GAN网络中引入自适应上下文感知与多尺度特征增强机制,结合4种损失函数动态优化,形成兼顾全局语义与局部细节的AOT-GAN网络。依据图像评价指标优选超参数,采用该网络填充不同缝网形态及纹理特征电成像图,并与经典的GAN网络、Criminisi算法、Bicubic插值法进行效果对比。【结果和结论】AOT-GAN在峰值信噪比(32.93 dB)与结构相似性指数(77.58%)上均优于经典算法,填充效果自然无痕,能有效保持高角度缝、网状缝的连续性,准确还原包卷层理与燧石结核等纹理细节,为基于电成像图的储层参数计算提供了可靠的数据支撑与理论依据。 展开更多
关键词 电成像测井 图像填充 生成对抗模型 AOT-gan网络 井壁裂缝
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An Organic Ferroelectric Synaptic Transistor
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作者 Zhenyu Feng Jiahao Wu +8 位作者 Weihong Yang Wei Li Guangdi Feng Qiuxiang Zhu Xiangjian Meng Xiaojun Guo Bobo Tian Junhao Chu Chungang Duan 《Chinese Physics Letters》 2025年第5期87-92,共6页
Poly(vinylidene-trifluoroethylene) [P(VDF-TrFE)] copolymer films generally demonstrate limited compatibility with organic semiconductors. The material is frequently compromised by exposure to organic semiconductor sol... Poly(vinylidene-trifluoroethylene) [P(VDF-TrFE)] copolymer films generally demonstrate limited compatibility with organic semiconductors. The material is frequently compromised by exposure to organic semiconductor solutions and other fabrication processes utilized in the production of organic ferroelectric transistors. In this study, an organic ferroelectric field effect transistor(OFeFET) with the 6,13-Bis(triisopropylsilylethynyl) pentacene(TIPS-pentacene) channel is fabricated, in which the aluminum oxide(Al_(2)O_(3)) interlayer is used to improve compatibility. The device displays polymorphic memory and synaptic plasticity of long-term potentiation and depression. Furthermore, an artificial neural network constructed using our devices is simulated to succeed in recognizing the MNIST handwritten digit database with a high accuracy of 92.8%. This research offers a viable approach to enhance the compatibility of the organic ferroelectric polymer P(VDF-TrFE) with organic semiconductors. 展开更多
关键词 organic semiconductors p vdf trfe copolymer copolymer films organic ferroelectric transistors aluminum oxide organic ferroelectric synaptic transistor fabrication processes organic ferroelectric field effect transistor ofefet
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一种对抗GAN攻击的联邦隐私增强方法研究
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作者 施寅生 包阳 庞晶晶 《信息网络安全》 北大核心 2026年第1期49-58,共10页
联邦学习通过分布式训练避免数据集中存储,然而,仍存在恶意客户端利用生成式对抗网络(GAN)攻击窃取隐私数据的风险。传统的差分隐私和加密机制等防御手段,存在模型性能与隐私效果权衡难或计算成本高等问题。文章针对联邦学习在图像识别... 联邦学习通过分布式训练避免数据集中存储,然而,仍存在恶意客户端利用生成式对抗网络(GAN)攻击窃取隐私数据的风险。传统的差分隐私和加密机制等防御手段,存在模型性能与隐私效果权衡难或计算成本高等问题。文章针对联邦学习在图像识别任务中面临的GAN攻击风险,提出一种基于Rényi差分隐私的隐私增强方法,旨在提升模型的数据隐私性。Rényi差分隐私的串行组合机制使得在多轮迭代中隐私预算增长速率从传统差分隐私的线性降为亚线性,可有效降低噪声添加量。文章方法利用Rényi差分隐私紧密的噪声组合特性,在客户端梯度更新参数时,通过基于权均衡权重的梯度裁剪和优化的高斯噪声添加,实现差分隐私计算,进而降低隐私泄露风险,同时平衡模型可用性。实验表明,文章方法在模型全局准确性受影响程度可接受的前提下,实现本地数据的隐私保护,增强模型的隐私保护能力,进而有效抵御GAN攻击,保障图像数据隐私性。 展开更多
关键词 联邦学习 gan攻击 Rényi差分隐私 隐私增强
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AlN背势垒GaN HEMT大失配外延及器件性能研究
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作者 陈思彤 刘洪宇 +2 位作者 申化欣 叶继春 郭炜 《固体电子学研究与进展》 2026年第1期28-33,共6页
研究了基于厚AlN模板层的GaN/AlN大失配外延及AlN背势垒高电子迁移率晶体管(High electron mobility transistor,HEMT)的制备及电特性。研究发现,采用“3D+2D”两步外延法可在厚AlN模板上成功外延出<600 nm的高质量GaN沟道层。制备的... 研究了基于厚AlN模板层的GaN/AlN大失配外延及AlN背势垒高电子迁移率晶体管(High electron mobility transistor,HEMT)的制备及电特性。研究发现,采用“3D+2D”两步外延法可在厚AlN模板上成功外延出<600 nm的高质量GaN沟道层。制备的AlN背势垒HEMT器件具有优异的开关比、低漏电流以及高达2755 V的击穿电压,优于传统采用高阻GaN缓冲层的HEMT器件,证明了AlN背势垒HEMT在高频、高压功率及射频器件中的巨大应用前景。 展开更多
关键词 高电子迁移率晶体管 氮化镓 薄膜外延 击穿电压
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GaN 30 kW连续波高可靠固态微波源
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作者 韩煦 郭怀新 《固体电子学研究与进展》 2026年第1期F0003-F0003,共1页
南京电子器件研究所基于Ga N器件,利用高效集成功率合成及传输技术、微流道三维高效散热技术、高功率自适应相关技术,设计制备了915 MHz 30 kW连续波固态微波源(如图1所示)。该产品实现了0.01%频率稳定度、0.1%功率稳定度及65%以上转换... 南京电子器件研究所基于Ga N器件,利用高效集成功率合成及传输技术、微流道三维高效散热技术、高功率自适应相关技术,设计制备了915 MHz 30 kW连续波固态微波源(如图1所示)。该产品实现了0.01%频率稳定度、0.1%功率稳定度及65%以上转换效率,频率和功率稳定度优于磁控管产品两个数量级以上,用于金刚石生长领域产生的等离子球更加紧实,生长效率更高。 展开更多
关键词 30 kW 连续波 高可靠 gan
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Neurotransmitter-mediated artificial synapses based on organic electrochemical transistors for future biomimic and bioinspired neuromorphic systems
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作者 Miao Cheng Yifan Xie +6 位作者 Jinyao Wang Qingqing Jin Yue Tian Changrui Liu Jingyun Chu Mengmeng Li Ling Li 《Journal of Semiconductors》 2025年第1期78-89,共12页
Organic electrochemical transistors have emerged as a solution for artificial synapses that mimic the neural functions of the brain structure,holding great potentials to break the bottleneck of von Neumann architectur... Organic electrochemical transistors have emerged as a solution for artificial synapses that mimic the neural functions of the brain structure,holding great potentials to break the bottleneck of von Neumann architectures.However,current artificial synapses rely primarily on electrical signals,and little attention has been paid to the vital role of neurotransmitter-mediated artificial synapses.Dopamine is a key neurotransmitter associated with emotion regulation and cognitive processes that needs to be monitored in real time to advance the development of disease diagnostics and neuroscience.To provide insights into the development of artificial synapses with neurotransmitter involvement,this review proposes three steps towards future biomimic and bioinspired neuromorphic systems.We first summarize OECT-based dopamine detection devices,and then review advances in neurotransmitter-mediated artificial synapses and resultant advanced neuromorphic systems.Finally,by exploring the challenges and opportunities related to such neuromorphic systems,we provide a perspective on the future development of biomimetic and bioinspired neuromorphic systems. 展开更多
关键词 artificial synapses organic electrochemical transistors NEUROTRANSMITTERS neuromorphic systems
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Bifunctional iron-porphyrin metal-organic frameworks for organic photoelectrochemical transistor gating and biosensing
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作者 Cheng-Shuang Wang Bing-Yu Zhou +4 位作者 Yi-Feng Wang Cheng Yuan Bo-Han Kou Wei-Wei Zhao Jing-Juan Xu 《Chinese Chemical Letters》 2025年第3期227-231,共5页
Iron-porphyrin metal-organic frameworks(MOFs)have emerged as a remarkable class of semiconductors with adjustable photoelectrical properties and peroxidase-mimicking activities,yet their full potential remains largely... Iron-porphyrin metal-organic frameworks(MOFs)have emerged as a remarkable class of semiconductors with adjustable photoelectrical properties and peroxidase-mimicking activities,yet their full potential remains largely unexplored.The organic photoelectrochemical transistor(OPECT)has been proven to be a prominent platform for diverse applications.Herein,iron-porphyrin MOFs,as bifunctional photo-gating module and horseradish peroxidase-mimicking nanozyme,is explored for novel OPECT bioanalysis.Exemplified by alpha-fetoprotein(AFP)-dependent sandwich immunorecognition and therein glucose oxidase(GOx)-generated H_(2)O_(2)to etch CdS quantum dots on the surface of iron-porphyrin MOFs,this OPECT bioanalysis achieved high-performance AFP detection with a low detection limit of 24 fg/mL.This work featured a bifunctional iron-porphyrin MOFs gated OPECT,which is envisioned to inspire more interest in developing the diverse MOFs-nanozymes toward novel optoelectronics and beyond. 展开更多
关键词 Organic photoelectrochemical transistor Iron-porphyrin metal-organic frameworks Nanozymes Peroxidase-mimicking activity BIOSENSING
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Bioinspired Electrolyte-Gated Organic Synaptic Transistors: From Fundamental Requirements to Applications
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作者 Yuanying Liang Hangyu Li +3 位作者 Hu Tang Chunyang Zhang Dong Men Dirk Mayer 《Nano-Micro Letters》 2025年第8期491-532,共42页
Rapid development of artificial intelligence requires the implementation of hardware systems with bioinspired parallel information processing and presentation and energy efficiency.Electrolyte-gated organic transistor... Rapid development of artificial intelligence requires the implementation of hardware systems with bioinspired parallel information processing and presentation and energy efficiency.Electrolyte-gated organic transistors(EGOTs)offer significant advantages as neuromorphic devices due to their ultra-low operation voltages,minimal hardwired connectivity,and similar operation environment as electrophysiology.Meanwhile,ionic–electronic coupling and the relatively low elastic moduli of organic channel materials make EGOTs suitable for interfacing with biology.This review presents an overview of the device architectures based on organic electrochemical transistors and organic field-effect transistors.Furthermore,we review the requirements of low energy consumption and tunable synaptic plasticity of EGOTs in emulating biological synapses and how they are affected by the organic materials,electrolyte,architecture,and operation mechanism.In addition,we summarize the basic operation principle of biological sensory systems and the recent progress of EGOTs as a building block in artificial systems.Finally,the current challenges and future development of the organic neuromorphic devices are discussed. 展开更多
关键词 Neuromorphic device Tunable synaptic plasticity Electrolyte-gated organic transistors Neurochemical signals Artificial perception systems
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Novel Structure of AlGaN/GaN High Electron Mobility Transistor with Groove Dual-Field Plate
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作者 Jing Liu Xiaobo Cao +3 位作者 Pinhan Zhang Huan Sun Xiaoxing Fu Wenge Duan 《Instrumentation》 2025年第4期15-24,共10页
The novel structure of the AlGaN/GaN high electron mobility transistor(HEMT)with a groove double field-plate is proposed in this paper,which resolves the issue of the current collapse caused by the high electric field... The novel structure of the AlGaN/GaN high electron mobility transistor(HEMT)with a groove double field-plate is proposed in this paper,which resolves the issue of the current collapse caused by the high electric field at the gate edge of conventional AlGaN/GaN HEMT.The current transport mechanism of the novel device and its effectiveness to suppress current collapse are studied.Based on the introduction of the groove dual-field plate,the depletion region of the novel device is extended.The electric field peak at the gate edge is reduced and the distribution of the electric field is more uniform.As a result,the new structure can improve the current collapse without significantly reducing the drain current.Compared with the conventional AlGaN/GaN HEMT,the suppression effect of the new device on the current collapse effect is increased by 94.1%when L_(fp1)=0.3μm and L_(fp2)=0.7μm. 展开更多
关键词 ALgan/gan HEMT current collapse dual field plate
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基于GAN-LSTM的通用机场冲突探测与智能解脱方法
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作者 陈博 李梓明 +4 位作者 徐松涛 叶一龙 柯颖 高峰 王东 《交通运输研究》 2026年第1期70-79,共10页
为提升A类通用机场终端区在动态环境下的冲突探测与解脱能力,提出一种生成对抗网络(GAN)与长短期记忆网络(LSTM)深度融合的端到端冲突探测与智能解脱方法。该方法的核心创新包括:(1)构建双任务判别器架构,通过共享特征实现轨迹真伪判别... 为提升A类通用机场终端区在动态环境下的冲突探测与解脱能力,提出一种生成对抗网络(GAN)与长短期记忆网络(LSTM)深度融合的端到端冲突探测与智能解脱方法。该方法的核心创新包括:(1)构建双任务判别器架构,通过共享特征实现轨迹真伪判别与冲突概率预测;(2)设计物理约束引导的生成器,在满足飞行约束条件下生成多样化解脱轨迹,并通过多准则筛选最优方案;(3)提出自适应损失权重调整策略,动态平衡轨迹重建精度、对抗训练与冲突规避等多个目标。基于TrajAir数据集的综合实验表明,所提方法的冲突检测准确率达93.4%,解脱成功率达88%,显著优于所对比的传统几何规则方法;所生成轨迹误差小、符合飞行性能约束,体现出良好的实时性、准确性及决策灵活性。研究可为通用航空空中交通管理智能化提供技术参考,有望促进低空空域的安全高效运行。 展开更多
关键词 通用航空 冲突探测 轨迹生成 生成对抗网络 深度学习
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