摘要
针对某Ga N功率放大器件MOS电容组装过程中开裂的问题进行分析,通过对失效样品外观的观察和断裂形貌分析,在MOS电容断裂面发现有明显的贝壳纹和河流花样形貌。根据解理断裂的特征分析出裂纹源的位置与电容器意外受力点重合,借助格雷菲斯原理和相关理论研究解释了微裂纹扩展导致MOS电容器失效的机理,采用模拟试验的方案复现MOS电容失效,形貌与失效件基本吻合,得出该MOS电容器失效的根本原因是MOS电容存在微裂纹和应力变化。
An analysis is conducted on the cracking problem of the MOS capacitor in a certain GaN power amplifi er device during assembly.By analyzing the appearance and fracture morphology of the failed sample,obvious shell patterns and river patterns are observed on the MOS capacitor fracture surface.Based on the characteristics of cleavage fracture,the crack initiation point is found to coincide with an unintended stress point on the capacitor.Utilizing Griffith theory and related theoretical principles,the mechanism of MOS capacitor failure caused by micro-crack propagation is elucidated.Simulation testing is employed to replicate the MOS capacitor failure,and the morphology is basically consistent with the failed component.It is determined that the root cause of this MOS capacitor failure is the presence of inherent micro-cracks and stress variation.
作者
张亚彬
徐博能
贡茜
崔洪波
ZHANG Yabin;XU Boneng;GONG Qian;CUI Hongbo(Nanjing Electronic Devices Institute,Nanjing 210016,China)
出处
《电子工艺技术》
2026年第2期32-34,共3页
Electronics Process Technology
