The transient response of a system of independent electrodes buried in a semi-infinite conducting medium is studied. Using a simple and versatile numerical scheme written by the authors and based on the Electric Field...The transient response of a system of independent electrodes buried in a semi-infinite conducting medium is studied. Using a simple and versatile numerical scheme written by the authors and based on the Electric Field Integral Equation (EFIE), the effect caused by harmonic signals ranging on frequency from Hz to hundred of MHz, and also by lightning type driving signal striking at a remote point far from the conductors, is extensively studied. The value of the scalar potential appearing on the electrodes as a function of the frequency of the applied signal is one of the variables investigated. Other features such as the input impedance at the injection point of the signal and the Ground Potential Rise (GPR) over the electrode system are also discussed.展开更多
A novel type of n/i/i/p heterojunction solar cell with a-Si：H（15 nm）/a-Si：H（10 nm）/epitaxial c-Si（47 p.m）/epitaxial c-Si（3 um） structure is fabricated by using the layer transfer technique, and the emitter l...A novel type of n/i/i/p heterojunction solar cell with a-Si：H（15 nm）/a-Si：H（10 nm）/epitaxial c-Si（47 p.m）/epitaxial c-Si（3 um） structure is fabricated by using the layer transfer technique, and the emitter layer is deposited by hot wire chemical vapour deposition. The effect of the doping concentration of the emitter layer Sd （Sd=PH3/（PH3 ＋SiH4＋H2）） on the performance of the solar cell is studied by means of current density-voltage and external quantum efficiency. The results show that the conversion efficiency of the solar cell first increases to a maximum value and then decreases with Sd increasing from 0.1% to 0.4%. The best performance of the solar cell is obtained at Sd = 0.2% with an open circuit voltage of 534 mV, a short circuit current density of 23.35 mA/cm2, a fill factor of 63.3%, and a conversion efficiency of 7.9%.展开更多
A new electrodeposition system, with a thin nickel wire as the anode, was used to deposit the CN x thin film on Si(100) substrate from a dicyandiamide-saturated solution in acetonitrile at a high potential. During the...A new electrodeposition system, with a thin nickel wire as the anode, was used to deposit the CN x thin film on Si(100) substrate from a dicyandiamide-saturated solution in acetonitrile at a high potential. During the experiment, when a certain high potential was applied, spark occurred between the Ni wire anode and the Si(100) substrate. The films were characterized by X-ray photoelectron spectroscopy(XPS), Fourier-transform infrared spectroscopy(FTIR), scaning electron microscopy(SEM) and X-ray diffraction(XRD). It was indicated that multiphase of α-C 3N 4, β-C 3N 4 and g-C 3N 4 was obtained in the films. This work is the first attempt to deposit carbon nitride material through a thin nickel wire anode and might provide a new route for preparing pure crystalline C 3N 4.展开更多
文摘The transient response of a system of independent electrodes buried in a semi-infinite conducting medium is studied. Using a simple and versatile numerical scheme written by the authors and based on the Electric Field Integral Equation (EFIE), the effect caused by harmonic signals ranging on frequency from Hz to hundred of MHz, and also by lightning type driving signal striking at a remote point far from the conductors, is extensively studied. The value of the scalar potential appearing on the electrodes as a function of the frequency of the applied signal is one of the variables investigated. Other features such as the input impedance at the injection point of the signal and the Ground Potential Rise (GPR) over the electrode system are also discussed.
基金Project supported by the National High Technology Research and Development Program of China (Grant No. 2006AA03Z219)the Jiangsu Innovation Program for Graduate Education, China (Grant No. CXZZ11 0206)the Priority Academic Program Development of Jiangsu Higher Education Institutions, China
文摘A novel type of n/i/i/p heterojunction solar cell with a-Si：H（15 nm）/a-Si：H（10 nm）/epitaxial c-Si（47 p.m）/epitaxial c-Si（3 um） structure is fabricated by using the layer transfer technique, and the emitter layer is deposited by hot wire chemical vapour deposition. The effect of the doping concentration of the emitter layer Sd （Sd=PH3/（PH3 ＋SiH4＋H2）） on the performance of the solar cell is studied by means of current density-voltage and external quantum efficiency. The results show that the conversion efficiency of the solar cell first increases to a maximum value and then decreases with Sd increasing from 0.1% to 0.4%. The best performance of the solar cell is obtained at Sd = 0.2% with an open circuit voltage of 534 mV, a short circuit current density of 23.35 mA/cm2, a fill factor of 63.3%, and a conversion efficiency of 7.9%.
文摘A new electrodeposition system, with a thin nickel wire as the anode, was used to deposit the CN x thin film on Si(100) substrate from a dicyandiamide-saturated solution in acetonitrile at a high potential. During the experiment, when a certain high potential was applied, spark occurred between the Ni wire anode and the Si(100) substrate. The films were characterized by X-ray photoelectron spectroscopy(XPS), Fourier-transform infrared spectroscopy(FTIR), scaning electron microscopy(SEM) and X-ray diffraction(XRD). It was indicated that multiphase of α-C 3N 4, β-C 3N 4 and g-C 3N 4 was obtained in the films. This work is the first attempt to deposit carbon nitride material through a thin nickel wire anode and might provide a new route for preparing pure crystalline C 3N 4.
