The shortcomings of traditional methods to find the shortest path are revealed, and a strategy of finding the self- organizing shortest path based on thermal flux diffusion on complex networks is presented. In our met...The shortcomings of traditional methods to find the shortest path are revealed, and a strategy of finding the self- organizing shortest path based on thermal flux diffusion on complex networks is presented. In our method, the shortest paths between the source node and the other nodes are found to be self-organized by comparing node temperatures. The computation complexity of the method scales linearly with the number of edges on underlying networks. The effects of the method on several networks, including a regular network proposed by Ravasz and Barabasi which is called the RB network, a real network, a random network proposed by Ravasz and Barabasi which is called the ER network and a scale-free network, are also demonstrated. Analytic and simulation results show that the method has a higher accuracy and lower computational complexity than the conventional methods.展开更多
Miniaturization of electronic package leads to high heat density and heat accumulation in electronics device, resulting in short life time and premature failure of the device. Junction temperature and thermal resistan...Miniaturization of electronic package leads to high heat density and heat accumulation in electronics device, resulting in short life time and premature failure of the device. Junction temperature and thermal resistance are the critical parameters that determine the thermal management and reliability in electronics cooling. Metal oxide field effect transistor（MOSFET）is an important semiconductor device for light emitting diode-integrated circuit（LED IC） driver application, and thermal management in MOSFET is a major challenge. In this study, investigations on thermal performance of MOSFET are performed for evaluating the junction temperature and thermal resistance. Suitable modifications in FR4 substrates are proposed by introducing thermal vias and copper layer coating to improve the thermal performance of MOSFET. Experiments are conducted using thermal transient tester（T3ster） at 2.0 A input current and ambient temperature varying from25℃ to 75℃. The thermal parameters are measured for three proposed designs： FR4 with circular thermal vias, FR4 with single strip of copper layer and embedded vias, and FR4 with I-shaped copper layer, and compared with that of plain FR4 substrate. From the experimental results, FR4I-shaped shows promising results by 33.71% reduction in junction temperature and 54.19% reduction in thermal resistance. For elevated temperature, the relative increases in junction temperature and thermal resistance are lower for FR4I-shaped than those for other substrates considered. The introduction of thermal vias and copper layer plays a significant role in thermal performance.展开更多
Yttria-stabilized zirconia(YSZ) is widely used as thermal barrier coatings(TBCs) to reduce heat transfer between hot gases and metallic components in gas-turbine engines. Porous structure can generally reduce the latt...Yttria-stabilized zirconia(YSZ) is widely used as thermal barrier coatings(TBCs) to reduce heat transfer between hot gases and metallic components in gas-turbine engines. Porous structure can generally reduce the lattice thermal conductivity of bulk material, so porous YSZ can be potentially used as TBCs with better thermal performance. In this work, we investigate the thermal conductivity of nanoporous YSZ using the nonequilibrium molecular dynamics(NEMD) simulation, and comprehensively discuss the effects of cross-sectional area, pore size, structure length, porosity, Y_2O_3 concentration and temperature on the thermal conductivity. To compare with the results of the NEMD simulation, we solve the heat diffusion equation and the gray Boltzmann transport equation(BTE) to calculate the thermal conductivity of the same porous structure. From the results,we find that the thermal conductivity of YSZ has a weak dependence on the structure length at the length range from 10 to 26 nm, which indicates that the majority of heat carriers have very short mean free path(MFP) but there exists small percentage(about 3%) of phonons with longer MFP(larger than 10 nm) contributing to the thermal conductivity. The thermal conductivity predicted by NEMD simulation is smaller than that of solving heat diffusion equation(diffusive limit) with the same porous structure. It shows that the presence of pores affects phonon scattering and further affects the thermal conductivity of nanoporous YSZ. The results agree well with the solution of gray BTE with a average MFP of 0.6 nm. The thermal conductivity of nanoporous YSZ weakly depends on the Y_2O_3 concentration and temperature, which shows the phonons with very short MFP play the major contribution to the thermal conductivity. The results help to better understand the heat transfer in porous YSZ structure and develop better TBCs.展开更多
A theoretical analysis of the cross-plane lattice thermal conduction in graphite is performed by using first-principles calculations and in the single-mode relaxation time approximation. The out-of-plane phonon acoust...A theoretical analysis of the cross-plane lattice thermal conduction in graphite is performed by using first-principles calculations and in the single-mode relaxation time approximation. The out-of-plane phonon acoustic mode ZA and optical mode ZO have almost 80% and 20% of contributions to cross-plane heat transfer, respectively. However, these two branches have a small part of total specific heat above 300 K. Phonons in the central 16% of Brillouin zone contribute80% of cross-plane transport. If the group velocity angle with respect to the graphite layer normal is less than 30?, then the contribution is 50% at 300 K. The ZA phonons with long cross-plane mean free path are focused in the cross-plane direction, and the largest mean free path is on the order of several micrometers at room temperature. The average value of cross-plane mean free path at 300 K is 112 nm for ZA phonons with group velocity angle with respect to the layer normal being less than 15?. The average value is dropped to 15 nm when phonons of all branches in the whole Brillouin zone are taken into account, which happens because most phonons have small or even no contributions.展开更多
Based on von Karman＇s plate theory, the axisymmetric thermal buckling and post-buckling of the functionally graded material （FGM） circular plates with in- plane elastic restraints under transversely non-uniform tem...Based on von Karman＇s plate theory, the axisymmetric thermal buckling and post-buckling of the functionally graded material （FGM） circular plates with in- plane elastic restraints under transversely non-uniform temperature rise are studied. The properties of the FGM media are varied through the thickness based on a simple power law. The governing equations are numerically solved by a shooting method. The results of the critical buckling temperature, post-buckling equilibrium paths, and configurations for the in-plane elastically restrained plates are presented. The effects of the in-plane elastic restraints, material property gradient, and temperature variation on the responses of thermal buckling and post-buckling are examined in detail.展开更多
基金supported by the National Natural Science Foundation of China (Grant No 60672095)the National High-Tech Research and Development Program of China (Grant No 2007AA11Z210)+3 种基金the Doctoral Fund of Ministry of Education of China (Grant No 20070286004)the Natural Science Foundation of Jiangsu Province,China (Grant No BK2008281)the Science and Technology Program of Southeast University,China (Grant No KJ2009351)the Excellent Young Teachers Program of Southeast University,China (Grant No BG2007428)
文摘The shortcomings of traditional methods to find the shortest path are revealed, and a strategy of finding the self- organizing shortest path based on thermal flux diffusion on complex networks is presented. In our method, the shortest paths between the source node and the other nodes are found to be self-organized by comparing node temperatures. The computation complexity of the method scales linearly with the number of edges on underlying networks. The effects of the method on several networks, including a regular network proposed by Ravasz and Barabasi which is called the RB network, a real network, a random network proposed by Ravasz and Barabasi which is called the ER network and a scale-free network, are also demonstrated. Analytic and simulation results show that the method has a higher accuracy and lower computational complexity than the conventional methods.
基金Project supported by the Collaborative Research in Engineering,Science&Technology(Grant No.P28C2-13)
文摘Miniaturization of electronic package leads to high heat density and heat accumulation in electronics device, resulting in short life time and premature failure of the device. Junction temperature and thermal resistance are the critical parameters that determine the thermal management and reliability in electronics cooling. Metal oxide field effect transistor（MOSFET）is an important semiconductor device for light emitting diode-integrated circuit（LED IC） driver application, and thermal management in MOSFET is a major challenge. In this study, investigations on thermal performance of MOSFET are performed for evaluating the junction temperature and thermal resistance. Suitable modifications in FR4 substrates are proposed by introducing thermal vias and copper layer coating to improve the thermal performance of MOSFET. Experiments are conducted using thermal transient tester（T3ster） at 2.0 A input current and ambient temperature varying from25℃ to 75℃. The thermal parameters are measured for three proposed designs： FR4 with circular thermal vias, FR4 with single strip of copper layer and embedded vias, and FR4 with I-shaped copper layer, and compared with that of plain FR4 substrate. From the experimental results, FR4I-shaped shows promising results by 33.71% reduction in junction temperature and 54.19% reduction in thermal resistance. For elevated temperature, the relative increases in junction temperature and thermal resistance are lower for FR4I-shaped than those for other substrates considered. The introduction of thermal vias and copper layer plays a significant role in thermal performance.
基金the National Natural Science Foundation of China(No.51676121)
文摘Yttria-stabilized zirconia(YSZ) is widely used as thermal barrier coatings(TBCs) to reduce heat transfer between hot gases and metallic components in gas-turbine engines. Porous structure can generally reduce the lattice thermal conductivity of bulk material, so porous YSZ can be potentially used as TBCs with better thermal performance. In this work, we investigate the thermal conductivity of nanoporous YSZ using the nonequilibrium molecular dynamics(NEMD) simulation, and comprehensively discuss the effects of cross-sectional area, pore size, structure length, porosity, Y_2O_3 concentration and temperature on the thermal conductivity. To compare with the results of the NEMD simulation, we solve the heat diffusion equation and the gray Boltzmann transport equation(BTE) to calculate the thermal conductivity of the same porous structure. From the results,we find that the thermal conductivity of YSZ has a weak dependence on the structure length at the length range from 10 to 26 nm, which indicates that the majority of heat carriers have very short mean free path(MFP) but there exists small percentage(about 3%) of phonons with longer MFP(larger than 10 nm) contributing to the thermal conductivity. The thermal conductivity predicted by NEMD simulation is smaller than that of solving heat diffusion equation(diffusive limit) with the same porous structure. It shows that the presence of pores affects phonon scattering and further affects the thermal conductivity of nanoporous YSZ. The results agree well with the solution of gray BTE with a average MFP of 0.6 nm. The thermal conductivity of nanoporous YSZ weakly depends on the Y_2O_3 concentration and temperature, which shows the phonons with very short MFP play the major contribution to the thermal conductivity. The results help to better understand the heat transfer in porous YSZ structure and develop better TBCs.
基金Project supported by the National Natural Science Foundation of China(Grant No.51376094)Jiangsu Overseas Visiting Scholar Program for University Prominent Young&Middle-aged Teachers and Presidents
文摘A theoretical analysis of the cross-plane lattice thermal conduction in graphite is performed by using first-principles calculations and in the single-mode relaxation time approximation. The out-of-plane phonon acoustic mode ZA and optical mode ZO have almost 80% and 20% of contributions to cross-plane heat transfer, respectively. However, these two branches have a small part of total specific heat above 300 K. Phonons in the central 16% of Brillouin zone contribute80% of cross-plane transport. If the group velocity angle with respect to the graphite layer normal is less than 30?, then the contribution is 50% at 300 K. The ZA phonons with long cross-plane mean free path are focused in the cross-plane direction, and the largest mean free path is on the order of several micrometers at room temperature. The average value of cross-plane mean free path at 300 K is 112 nm for ZA phonons with group velocity angle with respect to the layer normal being less than 15?. The average value is dropped to 15 nm when phonons of all branches in the whole Brillouin zone are taken into account, which happens because most phonons have small or even no contributions.
基金Project supported by the National Natural Science Foundation of China(Nos.11272278 and11672260)the China Postdoctoral Science Foundation(No.149558)
文摘Based on von Karman＇s plate theory, the axisymmetric thermal buckling and post-buckling of the functionally graded material （FGM） circular plates with in- plane elastic restraints under transversely non-uniform temperature rise are studied. The properties of the FGM media are varied through the thickness based on a simple power law. The governing equations are numerically solved by a shooting method. The results of the critical buckling temperature, post-buckling equilibrium paths, and configurations for the in-plane elastically restrained plates are presented. The effects of the in-plane elastic restraints, material property gradient, and temperature variation on the responses of thermal buckling and post-buckling are examined in detail.
