In this paper,new SVPWM switching sequences for six-phase asymmetrical induction motor drives are derived with the aim to reduce inverter’s switching losses.Total three switching sequences are introduced in this pape...In this paper,new SVPWM switching sequences for six-phase asymmetrical induction motor drives are derived with the aim to reduce inverter’s switching losses.Total three switching sequences are introduced in this paper.These sequences are derived such that the phases get continuously clamped when a current of the phases is around its peak magnitude and hence reduced switching losses are recorded.The comparative performances of these modulation techniques are studied with two existing switching sequences.Simulation,analytical and experimental results are presented.Based on these results,it is found that new switching sequences reduce switching losses effectively in dual three phase inverters.展开更多
This paper proposes a novel super junction （S J） SiGe switching power diode which has a columnar structure of alternating p- and n- doped pillar substituting conventional n- base region and has far thinner strained ...This paper proposes a novel super junction （S J） SiGe switching power diode which has a columnar structure of alternating p- and n- doped pillar substituting conventional n- base region and has far thinner strained SiGe p＋ layer to overcome the drawbacks of existing Si switching power diode. The SJ SiGe diode can achieve low specific on-resistance, high breakdown voltages and fast switching speed. The results indicate that the forward voltage drop of SJ SiGe diode is much lower than that of conventional Si power diode when the operating current densities do not exceed 1000 A/cm^2, which is very good for getting lower operating loss. The forward voltage drop of the Si diode is 0.66V whereas that of the SJ SiGe diode is only 0.52V voltages are 203 V for the former and 235 V for the latter. at operating current density of 10A/cm^2. The breakdown Compared with the conventional Si power diode, the reverse recovery time of SJ SiGe diode with 20 per cent Ge content is shortened by above a half and the peak reverse current is reduced by over 15%. The SJ SiGe diode can remarkably improve the characteristics of power diode by combining the merits of both SJ structure and SiGe material.展开更多
A split-gate SiC trench gate MOSFET with stepped thick oxide, source-connected split-gate(SG), and p-type pillar(ppillar) surrounded thick oxide shielding region(GSDP-TMOS) is investigated by Silvaco TCAD simulations....A split-gate SiC trench gate MOSFET with stepped thick oxide, source-connected split-gate(SG), and p-type pillar(ppillar) surrounded thick oxide shielding region(GSDP-TMOS) is investigated by Silvaco TCAD simulations. The sourceconnected SG region and p-pillar shielding region are introduced to form an effective two-level shielding, which reduces the specific gate–drain charge(Q_(gd,sp)) and the saturation current, thus reducing the switching loss and increasing the short-circuit capability. The thick oxide that surrounds a p-pillar shielding region efficiently protects gate oxide from being damaged by peaked electric field, thereby increasing the breakdown voltage(BV). Additionally, because of the high concentration in the n-type drift region, the electrons diffuse rapidly and the specific on-resistance(Ron,sp) becomes smaller.In the end, comparing with the bottom p~+ shielded trench MOSFET(GP-TMOS), the Baliga figure of merit(BFOM,BV~2/R_(on,sp)) is increased by 169.6%, and the high-frequency figure of merit(HF-FOM, R_(on,sp) × Q_(gd,sp)) is improved by310%, respectively.展开更多
This paper explores and proposes a design solution of an integrated skip cycle mode （SCM） control circuit with a simple structure. The design is simulated and implemented with XD10H-1.0μm modular DIMOS 650 V proces...This paper explores and proposes a design solution of an integrated skip cycle mode （SCM） control circuit with a simple structure. The design is simulated and implemented with XD10H-1.0μm modular DIMOS 650 V process. In order to meet the requirement of a wide temperature range and high yields of products, the schematic extracted from the layout is simulated with five process corners at 27℃ and 90℃. Simulation results demonstrate that the proposed integrated circuit is immune to noise and achieves skipping cycle control when switching mode power supply （SMPS） works with low load or without load.展开更多
We investigate the nonlinear dynamics of a system composed of a cigar-shaped Bose-Einstein condensate and an optical cavity with the two sides coupled dispersively.By adopting discrete-mode approximation for the conde...We investigate the nonlinear dynamics of a system composed of a cigar-shaped Bose-Einstein condensate and an optical cavity with the two sides coupled dispersively.By adopting discrete-mode approximation for the condensate,taking atom loss as a necessary part of the model to analyze the evolution of the system,while using trial and error method to find out steady states of the system as a reference,numerical simulation demonstrates that with a constant pump,atom loss will trigger a quantum optical bi-stability switch,which predicts a new interesting phenomenon for experiments to verify.展开更多
A split gate MOSFET(SG-MOSFET)is widely known for reducing the reverse transfer capacitance(C_(RSS)).In a 3.3 kV class,the SG-MOSFET does not provide reliable operation due to the high gate oxide electric field.In add...A split gate MOSFET(SG-MOSFET)is widely known for reducing the reverse transfer capacitance(C_(RSS)).In a 3.3 kV class,the SG-MOSFET does not provide reliable operation due to the high gate oxide electric field.In addition to the poor static performance,the SG-MOSFET has issues such as the punch through and drain-induced barrier lowering(DIBL)caused by the high gate oxide electric field.As such,a 3.3 kV 4 H-SiC split gate MOSFET with a grounded central implant region(SG-CIMOSFET)is proposed to resolve these issues and for achieving a superior trade-off between the static and switching performance.The SG-CIMOSFET has a significantly low on-resistance(R_(ON))and maximum gate oxide field(E_(OX))due to the central implant region.A grounded central implant region significantly reduces the C_(RSS)and gate drain charge(Q_(GD))by partially screening the gate-to-drain capacitive coupling.Compared to a planar MOSFET,the SG MOSFET,central implant MOSFET(CIMOSFET),the SGCIMOSFET improve the R_(ON)×Q_(GD)by 83.7%,72.4%and 44.5%,respectively.The results show that the device features not only the smallest switching energy loss but also the fastest switching time.展开更多
An optimized silicon carbide(SiC)trench metal-oxide-semiconductor field-effect transistor(MOSFET)structure with side-wall p-type pillar(p-pillar)and wrap n-type pillar(n-pillar)in the n-drain was investigated by utili...An optimized silicon carbide(SiC)trench metal-oxide-semiconductor field-effect transistor(MOSFET)structure with side-wall p-type pillar(p-pillar)and wrap n-type pillar(n-pillar)in the n-drain was investigated by utilizing Silvaco TCAD simulations.The optimized structure mainly includes a p+buried region,a light n-type current spreading layer(CSL),a p-type pillar region,and a wrapping n-type pillar region at the right and bottom of the p-pillar.The improved structure is named as SNPPT-MOS.The side-wall p-pillar region could better relieve the high electric field around the p+shielding region and the gate oxide in the off-state mode.The wrapping n-pillar region and CSL can also effectively reduce the specific on-resistance(Ron,sp).As a result,the SNPPT-MOS structure exhibits that the figure of merit(Fo M)related to the breakdown voltage(V_(BR))and Ron,sp(V_(BR)^2R_(on,sp))of the SNPPT-MOS is improved by 44.5%,in comparison to that of the conventional trench gate SJ MOSFET(full-SJ-MOS).In addition,the SNPPT-MOS structure achieves a much fasterwitching speed than the full-SJ-MOS,and the result indicates an appreciable reduction in the switching energy loss.展开更多
Based on the principle of thermal conduction, three metal alloys （stainless steel, copper-tungsten and graphite） were chosen as the material of the high impulse current discharging switch. Experimental results indic...Based on the principle of thermal conduction, three metal alloys （stainless steel, copper-tungsten and graphite） were chosen as the material of the high impulse current discharging switch. Experimental results indicate that the mass loss and surface erosion morphology of the electrode are related with the electrode material （conductivity σ, melting point Tin, density p and thermal capacity c） and the impulse transferred charge （or energy） per impulse for the same total impulse transferred charge. The experimental results indicate that the mass loss of stainless steel, copper-tungsten and graphite are 380.10 μg/C, 118.10 μg/C and 81.90 μg/C respectively under the condition of a total impulse transferred charge of 525 C and a transferred charge per impulse of 10.5 C. Under the same impulse transferred charge, the mass loss of copper-tungsten（118.10 μg/C） with the transferred charge per impulse at 10.5 C is far larger than the mass loss （38.61μg/C） at a 1.48 C transferred charge per impulse. The electrode erosion mechanism under high energy impulse arcs is analyzed briefly and it is suggested that by selecting high conductive metal or metal alloy as the electrode material of a high energy impulse spark gap switch and setting high erosion resistance material at the top of the electrode, the mass loss of the electrode can be reduced and the life of the switch prolonged.展开更多
A high-performance single-pole single-throw(SPST) RF switch for mobile phone RF front-end modules(FEMs) was designed and characterized in a 0.13 μm partially depleted silicon-on-insulator(PD SOI) process. In this pap...A high-performance single-pole single-throw(SPST) RF switch for mobile phone RF front-end modules(FEMs) was designed and characterized in a 0.13 μm partially depleted silicon-on-insulator(PD SOI) process. In this paper, the traditional seriesshunt configuration design was improved by introducing a suitably large DC bias resistor and leakage-preventing PMOS, together with the floating body technique. The performance of the RF switch is greatly improved. Furthermore, a new Ron × Coff testing method is also proposed. The size of this SPST RF switch is 0.2 mm2. This switch can be widely used for present 4 G and forthcoming 5 G mobile phone FEMs.展开更多
The improved peri-implant bone response demonstrated by platform switching may be the result of reduced amounts of metal ions released to the surrounding tissues. The aim of this study was to compare the levels of met...The improved peri-implant bone response demonstrated by platform switching may be the result of reduced amounts of metal ions released to the surrounding tissues. The aim of this study was to compare the levels of metal ions released from platform-matched and platform-switched implant-abutment couples as a result of accelerated corrosion. Thirty-six titanium alloy （Ti-6AI-4V） and cobalt-chrome alloy abutments were coupled with titanium cylinders forming either platform-switched or platform-matched groups （n = 6）. In addition, 18 unconnected samples served as controls. The specimens were subjected to accelerated corrosion by static immersion in 1% lactic acid for 1 week. The amount of metal ions ion of each test tube was measured using inductively coupled plasma mass spectrometry. Scanning electron microscope （SEM） images and energy dispersive spectroscopy X-ray analyses were performed pre- and post-immersion to assess corrosion at the interface. The platform-matched groups demonstrated higher ion release for vanadium, aluminium, cobalt, chrome, and molybdenum compared with the platform-switched groups （P〈 0.05）. Titanium was the highest element to be released regardless of abutment size or connection （P〈0.05）. SEM images showed pitting corrosion prominent on the outer borders of the implant and abutment platform surfaces. In conclusion, implant-abutment couples underwent an active corrosion process resulting in metal ions release into the surrounding environment. The highest amount of metal ions released was recorded for the platform-matched groups, suggesting that platform-switching concept has a positive effect in reducing the levels of metal ion release from the implant-abutment couples.展开更多
A nanosecond response waveguide electro-optic （EO） switch based on ultraviolet （UV） sensitive polymers of Norland optical adhesive （NOA73） and Dispersed Red 1 （DR1） doped SU-8 （DR1/SU-8） is designed and fabr...A nanosecond response waveguide electro-optic （EO） switch based on ultraviolet （UV） sensitive polymers of Norland optical adhesive （NOA73） and Dispersed Red 1 （DR1） doped SU-8 （DR1/SU-8） is designed and fabricated. The absorption properties, refractive indexes, and surface morphologies of NOA73 film are characterized. The single-mode transmission condition is computed by the effective index method, and the percentage of optical field distributed in EO layer is optimized to be 93.78 %. By means of spin-coating, thermal evaporation, photolithography, and inductively coupled plasma etching, a Mach-Zehnder inverted-rib waveguide EO switch with micro-strip line electrode is fabricated on a silicon substrate. Scanning electron microscope characterization proves the physic-chemical compatibility between NOA73 cladding and DR1/SU-8 core material. The optical transmission loss of the fabricated switch is measured to be 2.5 dB/cm. The rise time and fall time of switching are 3.199 ns and 2.559 ns, respectively. These results indicate that the inverted-rib wave- guide based on UV-curable polymers can effectively reduce the optical transmission loss and improve the time response performance of an EO switch.展开更多
A silicon (Si)/silicon carbide (4H-SiC) heterojunction double-trench metal-oxide-semiconductor field effect transistor (MOSFET) (HDT-MOS) with the gate-controlled tunneling effect is proposed for the first time based ...A silicon (Si)/silicon carbide (4H-SiC) heterojunction double-trench metal-oxide-semiconductor field effect transistor (MOSFET) (HDT-MOS) with the gate-controlled tunneling effect is proposed for the first time based on simulations. In this structure, the channel regions are made of Si to take advantage of its high channel mobility and carrier density. The voltage-withstanding region is made of 4H-SiC so that HDT-MOS has a high breakdown voltage (BV) similar to pure 4H-SiC double-trench MOSFETs (DT-MOSs). The gate-controlled tunneling effect indicates that the gate voltage (V_(G)) has a remarkable influence on the tunneling current of the heterojunction. The accumulation layer formed with positive VG can reduce the width of the Si/SiC heterointerface barrier, similar to the heavily doped region in an Ohmic contact. This narrower barrier is easier for electrons to tunnel through, resulting in a lower heterointerface resistance. Thus, with similar BV (approximately 1770 V), the specific on-state resistance (R_(ON-SP)) of HDT-MOS is reduced by 0.77 mΩ·cm^(2) compared with that of DT-MOS. The gate-to-drain charge (Q_(GD)) and switching loss of HDT-MOS are 52.14% and 22.59% lower than those of DT-MOS, respectively, due to the lower gate platform voltage (V_(GP)) and the corresponding smaller variation (ΔV_(GP)). The figure of merit (Q_(GD)×R_(ON-SP)) of HDT-MOS decreases by 61.25%. Moreover, the heterointerface charges can reduce RON-SP of HDT-MOS due to trap-assisted tunneling while the heterointerface traps show the opposite effect. Therefore, the HDT-MOS structure can significantly reduce the working loss of SiC MOSFET, leading to a lower temperature rise when the devices are applied in the system.展开更多
The issue of burst losses imposes a constraint on the development of Optical Burst Switching （OBS） networks. Heavy burst losses strongly affect the Quality of Service （QoS） intended by end users. This article pres...The issue of burst losses imposes a constraint on the development of Optical Burst Switching （OBS） networks. Heavy burst losses strongly affect the Quality of Service （QoS） intended by end users. This article presents a QoS aware Routing and Wavelength Allocation （RWA） technique for burst switching in OBS networks. The RWA problem is modeled as a bi-objective Integer Linear Programming （ILP） problem, where objective functions are based on minimizing the number of wavelengths used and the number of hops traversed to fulfill the burst transmission requests for a given set of node pairs. The ILP model is solved using a novel approach based on a Differential Evolution （DE） algorithm. Analytical results show that the DE algorithm provides a better performance compared to shortest path routing, which is a widely accepted routing strategy for OBS networks.展开更多
Quasi Z-source converter is a single stage soft switched power converter derived from Z-source converter topology, employing an impedance network coupling the source with the converter. The quasi Z-source source conve...Quasi Z-source converter is a single stage soft switched power converter derived from Z-source converter topology, employing an impedance network coupling the source with the converter. The quasi Z-source source converter can buck or boost the voltage and current flow is bidirectional. The duty cycle of the switch can be adjusted to maintain constant voltage during load change. To obtain constant output voltage, proper controller design is a must. This paper presents closed loop control of quasi Z-source converter using PI controller where controller parameters are estimated using the small signal model of the entire system. The transfer function of the system with AC sweep is used to obtain appropriate proportional and integral gain constants to reduce transient dynamics and to reduce steady state error.展开更多
This paper describes a fixed-fixed beam ohmic switch in series with a fixed capacitor as a replacement for a capacitive switch.In this switch,a metal plate deposited on the dielectric ensures perfectly contact with th...This paper describes a fixed-fixed beam ohmic switch in series with a fixed capacitor as a replacement for a capacitive switch.In this switch,a metal plate deposited on the dielectric ensures perfectly contact with the dielectric layer in the down state.The area size of the metal plate directly influences the capacitance ratio of the switch,as the area size of the metal cap decreases,the capacitance ratio dramatically rises up.The down/up capacitance ratio can exceed 800 times over the conventional designs using the same materials and the equal size.Measurement results show that high capacitance ratio of the switches has a large effect on the isolation,and can actually improve the performance of the switches.展开更多
文摘In this paper,new SVPWM switching sequences for six-phase asymmetrical induction motor drives are derived with the aim to reduce inverter’s switching losses.Total three switching sequences are introduced in this paper.These sequences are derived such that the phases get continuously clamped when a current of the phases is around its peak magnitude and hence reduced switching losses are recorded.The comparative performances of these modulation techniques are studied with two existing switching sequences.Simulation,analytical and experimental results are presented.Based on these results,it is found that new switching sequences reduce switching losses effectively in dual three phase inverters.
基金Project supported by the National Natural Science Foundation of China (Grant No 50477012)the Doctoral Program Foundation of Institutes of Higher Education of China (Grant No 20050700006)the Special Scientific Research Program of the Education Bureau of Shaanxi Province,China (Grant No 05JK268)
文摘This paper proposes a novel super junction （S J） SiGe switching power diode which has a columnar structure of alternating p- and n- doped pillar substituting conventional n- base region and has far thinner strained SiGe p＋ layer to overcome the drawbacks of existing Si switching power diode. The SJ SiGe diode can achieve low specific on-resistance, high breakdown voltages and fast switching speed. The results indicate that the forward voltage drop of SJ SiGe diode is much lower than that of conventional Si power diode when the operating current densities do not exceed 1000 A/cm^2, which is very good for getting lower operating loss. The forward voltage drop of the Si diode is 0.66V whereas that of the SJ SiGe diode is only 0.52V voltages are 203 V for the former and 235 V for the latter. at operating current density of 10A/cm^2. The breakdown Compared with the conventional Si power diode, the reverse recovery time of SJ SiGe diode with 20 per cent Ge content is shortened by above a half and the peak reverse current is reduced by over 15%. The SJ SiGe diode can remarkably improve the characteristics of power diode by combining the merits of both SJ structure and SiGe material.
基金the National Natural Science Foundation of China (Grant Nos. 61774052 and 61904045)the National Research and Development Program for Major Research Instruments of China (Grant No. 62027814)the Natural Science Foundation of Jiangxi Province, China (Grant No. 20212BAB214047)。
文摘A split-gate SiC trench gate MOSFET with stepped thick oxide, source-connected split-gate(SG), and p-type pillar(ppillar) surrounded thick oxide shielding region(GSDP-TMOS) is investigated by Silvaco TCAD simulations. The sourceconnected SG region and p-pillar shielding region are introduced to form an effective two-level shielding, which reduces the specific gate–drain charge(Q_(gd,sp)) and the saturation current, thus reducing the switching loss and increasing the short-circuit capability. The thick oxide that surrounds a p-pillar shielding region efficiently protects gate oxide from being damaged by peaked electric field, thereby increasing the breakdown voltage(BV). Additionally, because of the high concentration in the n-type drift region, the electrons diffuse rapidly and the specific on-resistance(Ron,sp) becomes smaller.In the end, comparing with the bottom p~+ shielded trench MOSFET(GP-TMOS), the Baliga figure of merit(BFOM,BV~2/R_(on,sp)) is increased by 169.6%, and the high-frequency figure of merit(HF-FOM, R_(on,sp) × Q_(gd,sp)) is improved by310%, respectively.
文摘This paper explores and proposes a design solution of an integrated skip cycle mode （SCM） control circuit with a simple structure. The design is simulated and implemented with XD10H-1.0μm modular DIMOS 650 V process. In order to meet the requirement of a wide temperature range and high yields of products, the schematic extracted from the layout is simulated with five process corners at 27℃ and 90℃. Simulation results demonstrate that the proposed integrated circuit is immune to noise and achieves skipping cycle control when switching mode power supply （SMPS） works with low load or without load.
基金Project supported by the National Natural Science Foundation of China (Grant Nos. 10934010 and 60978019)
文摘We investigate the nonlinear dynamics of a system composed of a cigar-shaped Bose-Einstein condensate and an optical cavity with the two sides coupled dispersively.By adopting discrete-mode approximation for the condensate,taking atom loss as a necessary part of the model to analyze the evolution of the system,while using trial and error method to find out steady states of the system as a reference,numerical simulation demonstrates that with a constant pump,atom loss will trigger a quantum optical bi-stability switch,which predicts a new interesting phenomenon for experiments to verify.
基金supported by the MSIT(Ministry of Science and ICT),Korea,under the ITRC(Information Technology Research Center)support program(IITP-2020-2018-0-01421)supervised by the IITP(Institute for Information&communications Technology Promotion)then Samsung Electronics.
文摘A split gate MOSFET(SG-MOSFET)is widely known for reducing the reverse transfer capacitance(C_(RSS)).In a 3.3 kV class,the SG-MOSFET does not provide reliable operation due to the high gate oxide electric field.In addition to the poor static performance,the SG-MOSFET has issues such as the punch through and drain-induced barrier lowering(DIBL)caused by the high gate oxide electric field.As such,a 3.3 kV 4 H-SiC split gate MOSFET with a grounded central implant region(SG-CIMOSFET)is proposed to resolve these issues and for achieving a superior trade-off between the static and switching performance.The SG-CIMOSFET has a significantly low on-resistance(R_(ON))and maximum gate oxide field(E_(OX))due to the central implant region.A grounded central implant region significantly reduces the C_(RSS)and gate drain charge(Q_(GD))by partially screening the gate-to-drain capacitive coupling.Compared to a planar MOSFET,the SG MOSFET,central implant MOSFET(CIMOSFET),the SGCIMOSFET improve the R_(ON)×Q_(GD)by 83.7%,72.4%and 44.5%,respectively.The results show that the device features not only the smallest switching energy loss but also the fastest switching time.
基金the National Natural Science Foundation of China(Grant Nos.61774052 and 61904045)the National Natural Science Foundation of Jiangxi Province of China(Grant No.20202BABL201021)the Education Department of Jiangxi Province of China for Youth Foundation(Grant No.GJJ191154)。
文摘An optimized silicon carbide(SiC)trench metal-oxide-semiconductor field-effect transistor(MOSFET)structure with side-wall p-type pillar(p-pillar)and wrap n-type pillar(n-pillar)in the n-drain was investigated by utilizing Silvaco TCAD simulations.The optimized structure mainly includes a p+buried region,a light n-type current spreading layer(CSL),a p-type pillar region,and a wrapping n-type pillar region at the right and bottom of the p-pillar.The improved structure is named as SNPPT-MOS.The side-wall p-pillar region could better relieve the high electric field around the p+shielding region and the gate oxide in the off-state mode.The wrapping n-pillar region and CSL can also effectively reduce the specific on-resistance(Ron,sp).As a result,the SNPPT-MOS structure exhibits that the figure of merit(Fo M)related to the breakdown voltage(V_(BR))and Ron,sp(V_(BR)^2R_(on,sp))of the SNPPT-MOS is improved by 44.5%,in comparison to that of the conventional trench gate SJ MOSFET(full-SJ-MOS).In addition,the SNPPT-MOS structure achieves a much fasterwitching speed than the full-SJ-MOS,and the result indicates an appreciable reduction in the switching energy loss.
文摘Based on the principle of thermal conduction, three metal alloys （stainless steel, copper-tungsten and graphite） were chosen as the material of the high impulse current discharging switch. Experimental results indicate that the mass loss and surface erosion morphology of the electrode are related with the electrode material （conductivity σ, melting point Tin, density p and thermal capacity c） and the impulse transferred charge （or energy） per impulse for the same total impulse transferred charge. The experimental results indicate that the mass loss of stainless steel, copper-tungsten and graphite are 380.10 μg/C, 118.10 μg/C and 81.90 μg/C respectively under the condition of a total impulse transferred charge of 525 C and a transferred charge per impulse of 10.5 C. Under the same impulse transferred charge, the mass loss of copper-tungsten（118.10 μg/C） with the transferred charge per impulse at 10.5 C is far larger than the mass loss （38.61μg/C） at a 1.48 C transferred charge per impulse. The electrode erosion mechanism under high energy impulse arcs is analyzed briefly and it is suggested that by selecting high conductive metal or metal alloy as the electrode material of a high energy impulse spark gap switch and setting high erosion resistance material at the top of the electrode, the mass loss of the electrode can be reduced and the life of the switch prolonged.
文摘A high-performance single-pole single-throw(SPST) RF switch for mobile phone RF front-end modules(FEMs) was designed and characterized in a 0.13 μm partially depleted silicon-on-insulator(PD SOI) process. In this paper, the traditional seriesshunt configuration design was improved by introducing a suitably large DC bias resistor and leakage-preventing PMOS, together with the floating body technique. The performance of the RF switch is greatly improved. Furthermore, a new Ron × Coff testing method is also proposed. The size of this SPST RF switch is 0.2 mm2. This switch can be widely used for present 4 G and forthcoming 5 G mobile phone FEMs.
基金funded by a scholarship from King Saud University, Kingdom of Saudi Arabia
文摘The improved peri-implant bone response demonstrated by platform switching may be the result of reduced amounts of metal ions released to the surrounding tissues. The aim of this study was to compare the levels of metal ions released from platform-matched and platform-switched implant-abutment couples as a result of accelerated corrosion. Thirty-six titanium alloy （Ti-6AI-4V） and cobalt-chrome alloy abutments were coupled with titanium cylinders forming either platform-switched or platform-matched groups （n = 6）. In addition, 18 unconnected samples served as controls. The specimens were subjected to accelerated corrosion by static immersion in 1% lactic acid for 1 week. The amount of metal ions ion of each test tube was measured using inductively coupled plasma mass spectrometry. Scanning electron microscope （SEM） images and energy dispersive spectroscopy X-ray analyses were performed pre- and post-immersion to assess corrosion at the interface. The platform-matched groups demonstrated higher ion release for vanadium, aluminium, cobalt, chrome, and molybdenum compared with the platform-switched groups （P〈 0.05）. Titanium was the highest element to be released regardless of abutment size or connection （P〈0.05）. SEM images showed pitting corrosion prominent on the outer borders of the implant and abutment platform surfaces. In conclusion, implant-abutment couples underwent an active corrosion process resulting in metal ions release into the surrounding environment. The highest amount of metal ions released was recorded for the platform-matched groups, suggesting that platform-switching concept has a positive effect in reducing the levels of metal ion release from the implant-abutment couples.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.61177027,61107019,61205032,and 61261130586)
文摘A nanosecond response waveguide electro-optic （EO） switch based on ultraviolet （UV） sensitive polymers of Norland optical adhesive （NOA73） and Dispersed Red 1 （DR1） doped SU-8 （DR1/SU-8） is designed and fabricated. The absorption properties, refractive indexes, and surface morphologies of NOA73 film are characterized. The single-mode transmission condition is computed by the effective index method, and the percentage of optical field distributed in EO layer is optimized to be 93.78 %. By means of spin-coating, thermal evaporation, photolithography, and inductively coupled plasma etching, a Mach-Zehnder inverted-rib waveguide EO switch with micro-strip line electrode is fabricated on a silicon substrate. Scanning electron microscope characterization proves the physic-chemical compatibility between NOA73 cladding and DR1/SU-8 core material. The optical transmission loss of the fabricated switch is measured to be 2.5 dB/cm. The rise time and fall time of switching are 3.199 ns and 2.559 ns, respectively. These results indicate that the inverted-rib wave- guide based on UV-curable polymers can effectively reduce the optical transmission loss and improve the time response performance of an EO switch.
基金the Major Science and Technology Program of Anhui Province under Grant No.2020b05050007.
文摘A silicon (Si)/silicon carbide (4H-SiC) heterojunction double-trench metal-oxide-semiconductor field effect transistor (MOSFET) (HDT-MOS) with the gate-controlled tunneling effect is proposed for the first time based on simulations. In this structure, the channel regions are made of Si to take advantage of its high channel mobility and carrier density. The voltage-withstanding region is made of 4H-SiC so that HDT-MOS has a high breakdown voltage (BV) similar to pure 4H-SiC double-trench MOSFETs (DT-MOSs). The gate-controlled tunneling effect indicates that the gate voltage (V_(G)) has a remarkable influence on the tunneling current of the heterojunction. The accumulation layer formed with positive VG can reduce the width of the Si/SiC heterointerface barrier, similar to the heavily doped region in an Ohmic contact. This narrower barrier is easier for electrons to tunnel through, resulting in a lower heterointerface resistance. Thus, with similar BV (approximately 1770 V), the specific on-state resistance (R_(ON-SP)) of HDT-MOS is reduced by 0.77 mΩ·cm^(2) compared with that of DT-MOS. The gate-to-drain charge (Q_(GD)) and switching loss of HDT-MOS are 52.14% and 22.59% lower than those of DT-MOS, respectively, due to the lower gate platform voltage (V_(GP)) and the corresponding smaller variation (ΔV_(GP)). The figure of merit (Q_(GD)×R_(ON-SP)) of HDT-MOS decreases by 61.25%. Moreover, the heterointerface charges can reduce RON-SP of HDT-MOS due to trap-assisted tunneling while the heterointerface traps show the opposite effect. Therefore, the HDT-MOS structure can significantly reduce the working loss of SiC MOSFET, leading to a lower temperature rise when the devices are applied in the system.
文摘The issue of burst losses imposes a constraint on the development of Optical Burst Switching （OBS） networks. Heavy burst losses strongly affect the Quality of Service （QoS） intended by end users. This article presents a QoS aware Routing and Wavelength Allocation （RWA） technique for burst switching in OBS networks. The RWA problem is modeled as a bi-objective Integer Linear Programming （ILP） problem, where objective functions are based on minimizing the number of wavelengths used and the number of hops traversed to fulfill the burst transmission requests for a given set of node pairs. The ILP model is solved using a novel approach based on a Differential Evolution （DE） algorithm. Analytical results show that the DE algorithm provides a better performance compared to shortest path routing, which is a widely accepted routing strategy for OBS networks.
文摘Quasi Z-source converter is a single stage soft switched power converter derived from Z-source converter topology, employing an impedance network coupling the source with the converter. The quasi Z-source source converter can buck or boost the voltage and current flow is bidirectional. The duty cycle of the switch can be adjusted to maintain constant voltage during load change. To obtain constant output voltage, proper controller design is a must. This paper presents closed loop control of quasi Z-source converter using PI controller where controller parameters are estimated using the small signal model of the entire system. The transfer function of the system with AC sweep is used to obtain appropriate proportional and integral gain constants to reduce transient dynamics and to reduce steady state error.
文摘This paper describes a fixed-fixed beam ohmic switch in series with a fixed capacitor as a replacement for a capacitive switch.In this switch,a metal plate deposited on the dielectric ensures perfectly contact with the dielectric layer in the down state.The area size of the metal plate directly influences the capacitance ratio of the switch,as the area size of the metal cap decreases,the capacitance ratio dramatically rises up.The down/up capacitance ratio can exceed 800 times over the conventional designs using the same materials and the equal size.Measurement results show that high capacitance ratio of the switches has a large effect on the isolation,and can actually improve the performance of the switches.
