The effect of In composition on two-dimensional electron gas in wurtzite AlGaN/InGaN heterostructures is theoretically investigated. The sheet carrier density is shown to increase nearly linearly with In mole fraction...The effect of In composition on two-dimensional electron gas in wurtzite AlGaN/InGaN heterostructures is theoretically investigated. The sheet carrier density is shown to increase nearly linearly with In mole fraction x, due to the increase in the polarization charge at the AlGaN/InGaN interface. The electron sheet density is enhanced with the doping in the AlGaN layer. The sheet carrier density is as high as 3.7×1013 cm^-2 at the donor density of 10×1018 cm^-3 for the HEMT structure with x=0.3. The contribution of additional donor density on the electron sheet density is nearly independent of the In mole fraction.展开更多
We report a self-collimating demonstration in planar photonic crystals （PhCs） fabricated in silicon-on-insulator （SOI） wafers using 0.18 μm silicon complimentary metal oxide semiconductor （CMOS） techniques. The...We report a self-collimating demonstration in planar photonic crystals （PhCs） fabricated in silicon-on-insulator （SOI） wafers using 0.18 μm silicon complimentary metal oxide semiconductor （CMOS） techniques. The emphasis was on demonstrating the self-collimation effect by using the standard CMOS equipment and process development of an optical test chip using a high-volume manufacturing facility. The PhCs are designed on the 230-nm-top-Si layer using a square lattice of air holes 280 nm in diameter. The lattice constant of the PhCs is 380 nm. The experimentally obtained wavelengths for self-collimation are in excellent agreement with theory.展开更多
The non-equilibrium Green＇s function （NEGF） technique provides a solid foundation for the development of quantum mechanical simulators. However, the convergence is always of great concern. We present a general anal...The non-equilibrium Green＇s function （NEGF） technique provides a solid foundation for the development of quantum mechanical simulators. However, the convergence is always of great concern. We present a general analytical formalism to acquire the accurate derivative of electron density with respect to electrical potential in the framework of NEGF. This formalism not only provides physical insight on non-local quantum phenomena in device simulation, but also can be used to set up a new scheme in solving the Poisson equation to boost the performance of convergence when the NEGF and Poisson equations are solved self-consistently. This method is illustrated by a simple one-dimensional example of an N＋＋ N＋ N＋＋ resistor. The total simulation time and iteration number are largely reduced.展开更多
Based on the non-equilibrium Green＇s function formalism and first-principles calculations, we investigate the electronic transport properties of an anthracene-based molecular switch with two carbon nanotube electrode...Based on the non-equilibrium Green＇s function formalism and first-principles calculations, we investigate the electronic transport properties of an anthracene-based molecular switch with two carbon nanotube electrodes. Our results show that different terminations at the carbon nanotube end strongly affect the transport properties of the switch. In the case of H-termination the current at low biases is dominated by non-resonant tunneling. In the N-termination case the current at low biases is dominated by quasi-resonant tunneling and is increased by several orders of magnitude. The enhancement is discussed by the molecular projected self-consistent Hamiltonian level, transmission function, and local density of states.展开更多
Phase change random access memory （PC-RAM） based on Si2Sb2Te5 with a Pt tapered heating electrode （Pt-THE）, which is fabricated using a focus ion beam （FIB）, is investigated. Compared with the tungsten electrode...Phase change random access memory （PC-RAM） based on Si2Sb2Te5 with a Pt tapered heating electrode （Pt-THE）, which is fabricated using a focus ion beam （FIB）, is investigated. Compared with the tungsten electrode, the Pt-THE facilitates the temperature rise in phase change material, which causes the decrease of reset voltage from 3.6 to 2.7 V. The programming region of the cell with the Pt-THE is smaller than that of the cell with a cylindrical tungsten heating electrode. The improved performance of the PC-RAM with a Pt-THE is attributed to the higher resistivity and lower thermal conductivity of the Pt electrode, and the reduction of the programming region, which is also verified by thermal simulation.展开更多
Recently, a new switching characteristic of double-walled carbon nanotubes （DWNTs） transistors is found in during experiments. We carry out a series of ab intio calculations on DWNTs＇ electronic properities, togeth...Recently, a new switching characteristic of double-walled carbon nanotubes （DWNTs） transistors is found in during experiments. We carry out a series of ab intio calculations on DWNTs＇ electronic properities, together with verification on the electronic response under the electric field. Our results reveal that the peculiar energy states relation in DWNTs and related contact modes should account for the distinct switching behavior of DWNT transistors. We believe these results have important implications in the fabrication and understanding of electronic devices with DWNTs.展开更多
文摘The effect of In composition on two-dimensional electron gas in wurtzite AlGaN/InGaN heterostructures is theoretically investigated. The sheet carrier density is shown to increase nearly linearly with In mole fraction x, due to the increase in the polarization charge at the AlGaN/InGaN interface. The electron sheet density is enhanced with the doping in the AlGaN layer. The sheet carrier density is as high as 3.7×1013 cm^-2 at the donor density of 10×1018 cm^-3 for the HEMT structure with x=0.3. The contribution of additional donor density on the electron sheet density is nearly independent of the In mole fraction.
基金Supported by the National Natural Science Foundation of China under Grant No 60721004, and the Shanghai Institute of Microsystern and Information Technology Fund for Young Scholars.
文摘We report a self-collimating demonstration in planar photonic crystals （PhCs） fabricated in silicon-on-insulator （SOI） wafers using 0.18 μm silicon complimentary metal oxide semiconductor （CMOS） techniques. The emphasis was on demonstrating the self-collimation effect by using the standard CMOS equipment and process development of an optical test chip using a high-volume manufacturing facility. The PhCs are designed on the 230-nm-top-Si layer using a square lattice of air holes 280 nm in diameter. The lattice constant of the PhCs is 380 nm. The experimentally obtained wavelengths for self-collimation are in excellent agreement with theory.
文摘The non-equilibrium Green＇s function （NEGF） technique provides a solid foundation for the development of quantum mechanical simulators. However, the convergence is always of great concern. We present a general analytical formalism to acquire the accurate derivative of electron density with respect to electrical potential in the framework of NEGF. This formalism not only provides physical insight on non-local quantum phenomena in device simulation, but also can be used to set up a new scheme in solving the Poisson equation to boost the performance of convergence when the NEGF and Poisson equations are solved self-consistently. This method is illustrated by a simple one-dimensional example of an N＋＋ N＋ N＋＋ resistor. The total simulation time and iteration number are largely reduced.
基金Supported by the Natural Science Foundation of Shandong Province under Grant No ZR2009AL004.
文摘Based on the non-equilibrium Green＇s function formalism and first-principles calculations, we investigate the electronic transport properties of an anthracene-based molecular switch with two carbon nanotube electrodes. Our results show that different terminations at the carbon nanotube end strongly affect the transport properties of the switch. In the case of H-termination the current at low biases is dominated by non-resonant tunneling. In the N-termination case the current at low biases is dominated by quasi-resonant tunneling and is increased by several orders of magnitude. The enhancement is discussed by the molecular projected self-consistent Hamiltonian level, transmission function, and local density of states.
基金Supported by the National Basic Research Program of China under Grant Nos 2007CB935400 and 2006CB302700, the National High-Technology Development Program of China （2008AA031402）, Science and Technology Council of Shanghai （0752nm013, 07QA14065, 07SA08, 08DZ2200700, 08JC1421700）, the National Nature Science Foundation of China （60776058）, and Chinese Academy of Sciences （083YQA1001）.
文摘Phase change random access memory （PC-RAM） based on Si2Sb2Te5 with a Pt tapered heating electrode （Pt-THE）, which is fabricated using a focus ion beam （FIB）, is investigated. Compared with the tungsten electrode, the Pt-THE facilitates the temperature rise in phase change material, which causes the decrease of reset voltage from 3.6 to 2.7 V. The programming region of the cell with the Pt-THE is smaller than that of the cell with a cylindrical tungsten heating electrode. The improved performance of the PC-RAM with a Pt-THE is attributed to the higher resistivity and lower thermal conductivity of the Pt electrode, and the reduction of the programming region, which is also verified by thermal simulation.
文摘Recently, a new switching characteristic of double-walled carbon nanotubes （DWNTs） transistors is found in during experiments. We carry out a series of ab intio calculations on DWNTs＇ electronic properities, together with verification on the electronic response under the electric field. Our results reveal that the peculiar energy states relation in DWNTs and related contact modes should account for the distinct switching behavior of DWNT transistors. We believe these results have important implications in the fabrication and understanding of electronic devices with DWNTs.
