摘要
We report a self-collimating demonstration in planar photonic crystals （PhCs） fabricated in silicon-on-insulator （SOI） wafers using 0.18 μm silicon complimentary metal oxide semiconductor （CMOS） techniques. The emphasis was on demonstrating the self-collimation effect by using the standard CMOS equipment and process development of an optical test chip using a high-volume manufacturing facility. The PhCs are designed on the 230-nm-top-Si layer using a square lattice of air holes 280 nm in diameter. The lattice constant of the PhCs is 380 nm. The experimentally obtained wavelengths for self-collimation are in excellent agreement with theory.
We report a self-collimating demonstration in planar photonic crystals （PhCs） fabricated in silicon-on-insulator （SOI） wafers using 0.18 μm silicon complimentary metal oxide semiconductor （CMOS） techniques. The emphasis was on demonstrating the self-collimation effect by using the standard CMOS equipment and process development of an optical test chip using a high-volume manufacturing facility. The PhCs are designed on the 230-nm-top-Si layer using a square lattice of air holes 280 nm in diameter. The lattice constant of the PhCs is 380 nm. The experimentally obtained wavelengths for self-collimation are in excellent agreement with theory.
基金
Supported by the National Natural Science Foundation of China under Grant No 60721004, and the Shanghai Institute of Microsystern and Information Technology Fund for Young Scholars.
