There is a rich of electric phenomena ubiquitously existing in novel quantum materials and advanced electronic devices.Microscopic understanding of the underlying physics relies on the sensitive and quantitative measu...There is a rich of electric phenomena ubiquitously existing in novel quantum materials and advanced electronic devices.Microscopic understanding of the underlying physics relies on the sensitive and quantitative measurements of the electric field,electric current,electric potential,and other related physical quantities with a spatial resolution down to nanometers.Combined with a scanning probe microscope(SPM),the emergent quantum sensors of atomic/nanometer size provide promising platforms for imaging various electric parameters with a sensitivity beyond a single electron/charge.In this perspective,we introduce the working principle of such newly developed technologies,which are based on the strong sensitivity of quantum systems to external disturbances.Then we review the recent applications of those quantum sensors in nanoscale electric sensing and imaging,including a discussion of their privileges over conventional SPM techniques.Finally,we propose some promising directions for the future developments and optimizations of quantum sensors in nanoscale electric sensing and imaging.展开更多
CdSe/CdS quantum dots （QDs） functionalized by thiourea （TU） were synthesized and used as a fluorescent sensor for mercury ion detection. The TU-functionalized QDs were prepared by bonding TU via electrostatic inte...CdSe/CdS quantum dots （QDs） functionalized by thiourea （TU） were synthesized and used as a fluorescent sensor for mercury ion detection. The TU-functionalized QDs were prepared by bonding TU via electrostatic interaction to the core/shell CdSe/CdS QDs after capping with thioglycolic acid （TGA）. It was observed that the fluorescence of the functionalized QDs was quenched upon the addition of Hg^2＋. The quantitative detection of Hg^2＋ with this fluorescent sensor could be conducted based on the linear relationship between the extent of quenching and the concentration of Hg^2＋ added in the range of 1-300 μg.L^-1, A detection limit of 0.56 μg.L^-1 was achieved. The sensor showed superior selectivity for Hg^2＋ and was successfully applied to the determination of mercury in environmental samples with satisfactory results展开更多
We prepare of ZnO quantum dots embedded in polyvinylpyrrolidone (PVP) matrix and report it’s working as ethanol sensor. The samples have been prepared via quenching technique where bulk ZnO powder is calcined at very...We prepare of ZnO quantum dots embedded in polyvinylpyrrolidone (PVP) matrix and report it’s working as ethanol sensor. The samples have been prepared via quenching technique where bulk ZnO powder is calcined at very high temperature of 1200°C and then quenched into ice cold polyvinylpyrrolidone solution. Thee acteiut the samples specimen have been characterized by using UV/VIS spectroscopy, X-ray diffracttion study and high resolution transmission electron microscopy (HRTEM). These studies indicate the sizes of quantum dots to be within 10 nm. The prepared quantum dot samples have been examined for ethanol vapour sensing by exploring the variation of their resistance with time at different operating temperatures. It has been revealed that ZnO quantum dots can sense ethanol at low operating (230°C) temperature with less response time.展开更多
Low toxic graphene quantum dot（GQD） was synthesized by pyrolyzing citric acid in alkaline solution and characterized by ultraviolet-visible（UV-vis） spectroscopy,X-ray diffraction（XRD）,atomic force microscopy（AF...Low toxic graphene quantum dot（GQD） was synthesized by pyrolyzing citric acid in alkaline solution and characterized by ultraviolet-visible（UV-vis） spectroscopy,X-ray diffraction（XRD）,atomic force microscopy（AFM）,spectrofluorimetery and dynamic light scattering（DLS） techniques.GQD was used for electrode modification and electro-oxidation of doxorubicin（DOX） at low potential.A substantial decrease in the overvoltage（- 0.56 V） of the DOX oxidation reaction（compared to ordinary electrodes） was observed using GQD as coating of glassy carbon electrode（GCE）.Differential pulse voltammetry was used to evaluate the analytical performance of DOX in the presence of phosphate buffer solution（pH 4.0） and good limit of detection was obtained by the proposed sensor.Such ability of GQD to promote the DOX electron-transfer reaction suggests great promise for its application as an electrochemical sensor.展开更多
Radiation effects on complementary metal-oxide-semiconductor（CMOS） active pixel sensors（APS） induced by proton and γ-ray are presented. The samples are manufactured with the standards of 0.35 μm CMOS technology....Radiation effects on complementary metal-oxide-semiconductor（CMOS） active pixel sensors（APS） induced by proton and γ-ray are presented. The samples are manufactured with the standards of 0.35 μm CMOS technology. Two samples have been irradiated un-biased by 23 MeV protons with fluences of 1.43 × 10^11 protons/cm^2 and 2.14 × 10^11 protons/cm-2,respectively, while another sample has been exposed un-biased to 65 krad（Si） ^60Co γ-ray. The influences of radiation on the dark current, fixed-pattern noise under illumination, quantum efficiency, and conversion gain of the samples are investigated. The dark current, which increases drastically, is obtained by the theory based on thermal generation and the trap induced upon the irradiation. Both γ-ray and proton irradiation increase the non-uniformity of the signal, but the nonuniformity induced by protons is even worse. The degradation mechanisms of CMOS APS image sensors are analyzed,especially for the interaction induced by proton displacement damage and total ion dose（TID） damage.展开更多
A pinned photodiode complementary metal–oxide–semiconductor transistor（CMOS） active pixel sensor is exposed to ^60Co to evaluate the performance for space applications. The sample is irradiated with a dose rate of...A pinned photodiode complementary metal–oxide–semiconductor transistor（CMOS） active pixel sensor is exposed to ^60Co to evaluate the performance for space applications. The sample is irradiated with a dose rate of 50 rad（SiO2）/s and a total dose of 100 krad（SiO2）, and the photodiode is kept unbiased. The degradation of dark current, full well capacity,and quantum efficiency induced by the total ionizing dose damage effect are investigated. It is found that the dark current increases mainly from the shallow trench isolation（STI） surrounding the pinned photodiode. Further results suggests that the decreasing of full well capacity due to the increase in the density, is induced by the total ionizing dose（TID） effect, of the trap interface, which also leads to the degradation of quantum efficiency at shorter wavelengths.展开更多
In the new century, quantum technology has developed rapidly and has been applied in many fields. As an important aspect of the aerospace science, metrology and measuring science is a field which is influenced by the ...In the new century, quantum technology has developed rapidly and has been applied in many fields. As an important aspect of the aerospace science, metrology and measuring science is a field which is influenced by the quantum technology dramatically. The new generation of the International System of Units will be redefined on the basis of the quantum theory. More and more new sensing techniques are developed taking into account quantum principles. In this paper, the influence of quantum technology on metrology and measuring science is introduced.展开更多
A quantum efficiency analytical model for complementary metal–oxide–semiconductor（CMOS） image pixels with a pinned photodiode structure is developed. The proposed model takes account of the non-uniform doping dist...A quantum efficiency analytical model for complementary metal–oxide–semiconductor（CMOS） image pixels with a pinned photodiode structure is developed. The proposed model takes account of the non-uniform doping distribution in the N-type region due to the impurity compensation formed by the actual fabricating process. The characteristics of two boundary PN junctions located in the N-type region for the particular spectral response of a pinned photodiode, are quantitatively analyzed. By solving the minority carrier steady-state diffusion equations and the barrier region photocurrent density equations successively, the analytical relationship between the quantum efficiency and the corresponding parameters such as incident wavelength, N-type width, peak doping concentration, and impurity density gradient of the N-type region is established. The validity of the model is verified by the measurement results with a test chip of 160×160 pixels array,which provides the accurate process with a theoretical guidance for quantum efficiency design in pinned photodiode pixels.展开更多
We analyze the development of quantum cryptography communication,including analyze the problems lie in the existent literatures and give the resolve methods according to these problems.Then discuss the quantum cryptog...We analyze the development of quantum cryptography communication,including analyze the problems lie in the existent literatures and give the resolve methods according to these problems.Then discuss the quantum cryptography communication for wireless networks and also point out the shortcoming of current research and the future of quantum wireless networks.展开更多
Chip-scale quantum magnetometers featuring both ultra-high sensitivity and uniform spin polarization are highly desired for practical applications and have been diligently pursued.However,the fulfillment of such capab...Chip-scale quantum magnetometers featuring both ultra-high sensitivity and uniform spin polarization are highly desired for practical applications and have been diligently pursued.However,the fulfillment of such capabilities for quantum magnetometers typically necessitates a separate heating unit,bulky reflector,and beyond,severely impeding on-chip integration and batch fabrication of these quantum devices.Herein,we present a novel paradigm for the wafer-level fabrication of ultra-sensitive chip-scale quantum magnetometer,which is enabled by integrating a highly reflective mirror and a temperature-controlled component on the optically transparent windows of the MEMS atomic vapor cell,thereby providing a genuinely all-in-one atomic vapor cell with a temperature stability better than±5 mK at up to 200℃ as well as a reflectivity of 95%at Rb D1 transition wavelength.With the as-developed on-chip atomic vapor cell with internal dimensions ofΦ3×1.5 mm^(3),we configured a chip-scale single-beam atomic magnetometer with a sensitivity floor of about 15 fT/Hz^(1/2),along with a theoretically more homogeneous spin polarization distribution.We envision that the proposed chip-scale integration solution paves a concrete route for batch manufacturing and widespread application of quantum magnetometers.展开更多
基金funding provided by Shanghai Jiao Tong Universitysupported by the National Key R&D Program under Grant Nos 2021YFA1400500+2 种基金the National Natural Science Foundation of China under Grant Nos 11888101,21725302,and U22A20260the Strategic Priority Research Program of the Chinese Academy of Sciences under Grant Nos XDB28000000support from the New Cornerstone Science Foundation through the XPLORER PRIZE.
文摘There is a rich of electric phenomena ubiquitously existing in novel quantum materials and advanced electronic devices.Microscopic understanding of the underlying physics relies on the sensitive and quantitative measurements of the electric field,electric current,electric potential,and other related physical quantities with a spatial resolution down to nanometers.Combined with a scanning probe microscope(SPM),the emergent quantum sensors of atomic/nanometer size provide promising platforms for imaging various electric parameters with a sensitivity beyond a single electron/charge.In this perspective,we introduce the working principle of such newly developed technologies,which are based on the strong sensitivity of quantum systems to external disturbances.Then we review the recent applications of those quantum sensors in nanoscale electric sensing and imaging,including a discussion of their privileges over conventional SPM techniques.Finally,we propose some promising directions for the future developments and optimizations of quantum sensors in nanoscale electric sensing and imaging.
基金the financial support from the National Natural Science Foundation of China (Nos. 20345006 and 20575043)
文摘CdSe/CdS quantum dots （QDs） functionalized by thiourea （TU） were synthesized and used as a fluorescent sensor for mercury ion detection. The TU-functionalized QDs were prepared by bonding TU via electrostatic interaction to the core/shell CdSe/CdS QDs after capping with thioglycolic acid （TGA）. It was observed that the fluorescence of the functionalized QDs was quenched upon the addition of Hg^2＋. The quantitative detection of Hg^2＋ with this fluorescent sensor could be conducted based on the linear relationship between the extent of quenching and the concentration of Hg^2＋ added in the range of 1-300 μg.L^-1, A detection limit of 0.56 μg.L^-1 was achieved. The sensor showed superior selectivity for Hg^2＋ and was successfully applied to the determination of mercury in environmental samples with satisfactory results
文摘We prepare of ZnO quantum dots embedded in polyvinylpyrrolidone (PVP) matrix and report it’s working as ethanol sensor. The samples have been prepared via quenching technique where bulk ZnO powder is calcined at very high temperature of 1200°C and then quenched into ice cold polyvinylpyrrolidone solution. Thee acteiut the samples specimen have been characterized by using UV/VIS spectroscopy, X-ray diffracttion study and high resolution transmission electron microscopy (HRTEM). These studies indicate the sizes of quantum dots to be within 10 nm. The prepared quantum dot samples have been examined for ethanol vapour sensing by exploring the variation of their resistance with time at different operating temperatures. It has been revealed that ZnO quantum dots can sense ethanol at low operating (230°C) temperature with less response time.
基金financial support by the Hematology-Oncology Research Center,Tabriz University of Medical Sciences,under Grants No.93/5
文摘Low toxic graphene quantum dot（GQD） was synthesized by pyrolyzing citric acid in alkaline solution and characterized by ultraviolet-visible（UV-vis） spectroscopy,X-ray diffraction（XRD）,atomic force microscopy（AFM）,spectrofluorimetery and dynamic light scattering（DLS） techniques.GQD was used for electrode modification and electro-oxidation of doxorubicin（DOX） at low potential.A substantial decrease in the overvoltage（- 0.56 V） of the DOX oxidation reaction（compared to ordinary electrodes） was observed using GQD as coating of glassy carbon electrode（GCE）.Differential pulse voltammetry was used to evaluate the analytical performance of DOX in the presence of phosphate buffer solution（pH 4.0） and good limit of detection was obtained by the proposed sensor.Such ability of GQD to promote the DOX electron-transfer reaction suggests great promise for its application as an electrochemical sensor.
基金Project supported the National Natural Science Foundation of China(Grant No.11675259)the West Light Foundation of the Chinese Academy of Sciences(Grant Nos.XBBS201316,2016-QNXZ-B-2,and 2016-QNXZ-B-8)Young Talent Training Project of Science and Technology,Xinjiang,China(Grant No.qn2015yx035)
文摘Radiation effects on complementary metal-oxide-semiconductor（CMOS） active pixel sensors（APS） induced by proton and γ-ray are presented. The samples are manufactured with the standards of 0.35 μm CMOS technology. Two samples have been irradiated un-biased by 23 MeV protons with fluences of 1.43 × 10^11 protons/cm^2 and 2.14 × 10^11 protons/cm-2,respectively, while another sample has been exposed un-biased to 65 krad（Si） ^60Co γ-ray. The influences of radiation on the dark current, fixed-pattern noise under illumination, quantum efficiency, and conversion gain of the samples are investigated. The dark current, which increases drastically, is obtained by the theory based on thermal generation and the trap induced upon the irradiation. Both γ-ray and proton irradiation increase the non-uniformity of the signal, but the nonuniformity induced by protons is even worse. The degradation mechanisms of CMOS APS image sensors are analyzed,especially for the interaction induced by proton displacement damage and total ion dose（TID） damage.
基金Project supported by the National Natural Science Foundation of China(Grant No.11675259)the West Light Foundation of the Chinese Academy of Sciences(Grant Nos.2016-QNXZ-B-8 and 2016-QNXZ-B-2)
文摘A pinned photodiode complementary metal–oxide–semiconductor transistor（CMOS） active pixel sensor is exposed to ^60Co to evaluate the performance for space applications. The sample is irradiated with a dose rate of 50 rad（SiO2）/s and a total dose of 100 krad（SiO2）, and the photodiode is kept unbiased. The degradation of dark current, full well capacity,and quantum efficiency induced by the total ionizing dose damage effect are investigated. It is found that the dark current increases mainly from the shallow trench isolation（STI） surrounding the pinned photodiode. Further results suggests that the decreasing of full well capacity due to the increase in the density, is induced by the total ionizing dose（TID） effect, of the trap interface, which also leads to the degradation of quantum efficiency at shorter wavelengths.
文摘In the new century, quantum technology has developed rapidly and has been applied in many fields. As an important aspect of the aerospace science, metrology and measuring science is a field which is influenced by the quantum technology dramatically. The new generation of the International System of Units will be redefined on the basis of the quantum theory. More and more new sensing techniques are developed taking into account quantum principles. In this paper, the influence of quantum technology on metrology and measuring science is introduced.
基金Project supported by the National Defense Pre-Research Foundation of China(Grant No.51311050301095)
文摘A quantum efficiency analytical model for complementary metal–oxide–semiconductor（CMOS） image pixels with a pinned photodiode structure is developed. The proposed model takes account of the non-uniform doping distribution in the N-type region due to the impurity compensation formed by the actual fabricating process. The characteristics of two boundary PN junctions located in the N-type region for the particular spectral response of a pinned photodiode, are quantitatively analyzed. By solving the minority carrier steady-state diffusion equations and the barrier region photocurrent density equations successively, the analytical relationship between the quantum efficiency and the corresponding parameters such as incident wavelength, N-type width, peak doping concentration, and impurity density gradient of the N-type region is established. The validity of the model is verified by the measurement results with a test chip of 160×160 pixels array,which provides the accurate process with a theoretical guidance for quantum efficiency design in pinned photodiode pixels.
基金supported by the National High Technology Research and Development Program of China(863 Program)(No. 2006AA01Z208)Nataral Sci-ence Foundation of Jiangsu Province(No. BK2007236)Six Projects Sponsoring Talent Summits of Jiangsu Province(No. SJ207001)
文摘We analyze the development of quantum cryptography communication,including analyze the problems lie in the existent literatures and give the resolve methods according to these problems.Then discuss the quantum cryptography communication for wireless networks and also point out the shortcoming of current research and the future of quantum wireless networks.
基金supported by the National Key Research&Development(R&D)Program of China(Grant No.2024YFB3212500)the National Natural Science Foundation of China(Grant No.52435010)the Shaanxi Provincial Science and Technology Development Program(Grant Nos.2023-LL-QY-35,and 2024RS-CXTD-19).
文摘Chip-scale quantum magnetometers featuring both ultra-high sensitivity and uniform spin polarization are highly desired for practical applications and have been diligently pursued.However,the fulfillment of such capabilities for quantum magnetometers typically necessitates a separate heating unit,bulky reflector,and beyond,severely impeding on-chip integration and batch fabrication of these quantum devices.Herein,we present a novel paradigm for the wafer-level fabrication of ultra-sensitive chip-scale quantum magnetometer,which is enabled by integrating a highly reflective mirror and a temperature-controlled component on the optically transparent windows of the MEMS atomic vapor cell,thereby providing a genuinely all-in-one atomic vapor cell with a temperature stability better than±5 mK at up to 200℃ as well as a reflectivity of 95%at Rb D1 transition wavelength.With the as-developed on-chip atomic vapor cell with internal dimensions ofΦ3×1.5 mm^(3),we configured a chip-scale single-beam atomic magnetometer with a sensitivity floor of about 15 fT/Hz^(1/2),along with a theoretically more homogeneous spin polarization distribution.We envision that the proposed chip-scale integration solution paves a concrete route for batch manufacturing and widespread application of quantum magnetometers.
