A systematic research on the pyrolysis process of polymethysilicone (SAR-2) and the thermostability of the pyrolysis residue was made by the thermogravimetric analysis, DTA and infrared spectroscopy.The experimental r...A systematic research on the pyrolysis process of polymethysilicone (SAR-2) and the thermostability of the pyrolysis residue was made by the thermogravimetric analysis, DTA and infrared spectroscopy.The experimental results indicate that the pyrolysis residue of SAR-2 converted into the amorphous SiC_xO_(4-x) phase above 900 ℃,the residue at 1200 ℃ is the most thermostable and antioxidant.It is suitable to be used as polysilicone preceramic.展开更多
Here,p-type polysilicon films are fabricated by ex-situ doping method with ammonium tetraborate tetrahydrate(ATT)as the boron source,named ATT-pPoly.The effects of ATT on the properties of polysilicon films are compre...Here,p-type polysilicon films are fabricated by ex-situ doping method with ammonium tetraborate tetrahydrate(ATT)as the boron source,named ATT-pPoly.The effects of ATT on the properties of polysilicon films are comprehensively analyzed.The Raman spectra reveal that the ATT-pPoly film is composed of grain boundary and crystalline regions.The preferred orientation is the(111)direction.The grain size increases from 16−23 nm to 21−47 nm,by~70%on average.Comparing with other reported films,Hall measurements reveal that the ATT-pPoly film has a higher carrier concentration(>10^(20)cm^(−3))and higher carrier mobility(>30 cm2/(V·s)).The superior properties of the ATT-pPoly film are attributed to the heavy doping and improved grain size.Heavy doping property is proved by the mean sheet resistance(Rsheet,m)and distribution profile.The R_(sheet,m)decreases by more than 30%,and it can be further decreased by 90%if the annealing temperature or duration is increased.The boron concentration of ATT-pPoly film annealed at 950℃ for 45 min is~3×10^(20)cm^(−3),and the distribution is nearly the same,except near the surface.Besides,the standard deviation coefficient(σ)of Rsheet,m is less than 5.0%,which verifies the excellent uniformity of ATT-pPoly film.展开更多
The modified Siemens method is the dominant process for the production of polysilicon,yet it is characterised by high energy consumption.Two models of laboratory-grade Siemens reduction furnace and 12 pairs of rods in...The modified Siemens method is the dominant process for the production of polysilicon,yet it is characterised by high energy consumption.Two models of laboratory-grade Siemens reduction furnace and 12 pairs of rods industrial-grade Siemens chemical vapor deposition(CVD)reduction furnace were established,and the effects of factors such as the diameter of silicon rods,the surface temperature of silicon rods,the air inlet velocity and temperature on the heat transfer process inside the reduction furnace were investigated by numerical simulation.The results show that the convective and radiant heat losses in the furnace increased with the diameter of the silicon rods.Furthermore,the radiant heat loss of the inner and outer rings of silicon rods was inconsistent for the industrial-grade reduction furnace.As the surface temperature of the silicon rods increases,the convective heat loss in the furnace increases,while the radiative heat loss remains relatively constant.When the inlet temperature and inlet velocity increase,the convective heat loss decreases,while the radiant heat loss remains relatively constant.Furthermore,the furnace wall surface emissivity increases,resulting in a significant increase in the amount of radiant heat loss in the furnace.In practice,this can be mitigated by polishing or adding coatings to reduce the furnace wall surface emissivity.展开更多
Polysilicon ohmic contacts to n-type 4H-SiC have been fabricated. TLM （transfer length method） test patterns with polysilicon structure are formed on n-wells created by phosphorus ion （P^＋） implantation into a Si...Polysilicon ohmic contacts to n-type 4H-SiC have been fabricated. TLM （transfer length method） test patterns with polysilicon structure are formed on n-wells created by phosphorus ion （P^＋） implantation into a Si-faced p-type 4H-SiC epilayer. The polysilicon is deposited using low-pressure chemical vapor deposition （LPCVD） and doped by phosphorous ions implantation followed by diffusion to obtain a sheet resistance of 22Ω/□. The specific contact resistance pc of n^＋ polysilicon contact to n-type 4H-SiC as low as 3.82 × 10^-5Ω· cm^2 is achieved. The result for sheet resistance Rsh of the phosphorous ion implanted layers in SiC is about 4.9kΩ/□. The mechanisms for n^＋ polysilicon ohmic contact to n-type SiC are discussed.展开更多
A new physical current-voltage model for polysilicon thin-film transistors （poly-Si TFTs） is presented. Taking the V-shaped exponential distribution of trap states density into consideration,explicit calculation of ...A new physical current-voltage model for polysilicon thin-film transistors （poly-Si TFTs） is presented. Taking the V-shaped exponential distribution of trap states density into consideration,explicit calculation of surface potential is derived using the Lambert W function, which greatly improves computational efficiency and is critical in circuit simulation. Based on the exponential density of trap states and the calculated surface potential, the drain current characteristics of the subthreshold and the strong inversion region are predicted. A complete and unique drain current expression, including kink effect, is deduced. The model and the experimental data agree well over a wide range of channel lengths and operational regions.展开更多
The resistivity instability of the boron-doped polysilicon resistors being a line resistance element of ICs is within the range of several kΩ's,especially when our running the underneath metal interconnects.Polys...The resistivity instability of the boron-doped polysilicon resistors being a line resistance element of ICs is within the range of several kΩ's,especially when our running the underneath metal interconnects.Polysilicon resistors have been fabricated under various processing conditions as well as some electrical and crystallographic characteristics have been obtained.It is shown the resistivity instability mainly results from the variational carrier mobility.By analyzing the Seto's model,the barrier height and trapped charge density are observed reducing under the Al over layer.Therefore,the resistance instability is also caused by both the charge trapping/detrapping occurring at polysilicon grain boundaries and the resultant variation in the potential barrier height.The formation of high-stability polysilicon resistors in the range of several kΩ's has been decided by compensating the ion implantation,which makes the charge trapping/detrapping at the grain boundary less susceptible to the hydrogen annealing.展开更多
The emission microscopy （EMMI） test is proposed as an effective method to control the polysilicon over-etching time of advanced CMOS processing combined with a novel test structure, named a poly-edge structure. From...The emission microscopy （EMMI） test is proposed as an effective method to control the polysilicon over-etching time of advanced CMOS processing combined with a novel test structure, named a poly-edge structure. From the values of the breakdown voltage （Vbd） of MOS capacitors （poly-edge structure） ,it was observed that,with for the initial polysilicon etching-time, almost all capacitors in one wafer failed under the initial failure model. With the increase of polysilicon over-etching time, the number of the initial failure capacitors decreased. Finally, no initial failure capacitors were observed after the polysilicon over-etching time was increased by 30s. The breakdown samples with the initial failure model and intrinsic failure model underwent EMMI tests. The EMMI test results show that the initial failure of capacitors with poly-edge structures was due to the bridging effect between the silicon substrate and the polysilicon gate caused by the residual polysilicon in the ditch between the shallow-trench isolation region and the active area, which will short the polysilicon gate with silicon substrate after the silicide process.展开更多
The validity of a novel, direct and convenient method for micromechanical property measurements by beam bending using a nanoindenter is demonstrated. This method combines a very high load resolution with a nanometric ...The validity of a novel, direct and convenient method for micromechanical property measurements by beam bending using a nanoindenter is demonstrated. This method combines a very high load resolution with a nanometric precision in the determination of the microcantilever beam deflection. The method is described clearly. In the deflection of microbeams, the influence of the indenter tip pushing into the top of the microbeams and the curvature across its width must be considered. The measurements were made on single-layer, micro-thick, several kinds of width and length polysilicon beams that were fabricated using conventional integrated circuit (IC) fabrication techniques. The elastic of a polysilicon microcantilever beam will vary linearly with the force and the deformation is thought to be elastic. Furthermore, it suggests that Young modulus of the beam can be determined from the slope of this linear relation. From the load deflection data acquired during bending the mechanical properties of the thin films were determined. Measured Young modulus is 137 GPa with approximately a ±2.9%～±6.3% difference in Young modulus.展开更多
Three-dimensional model of chemical vapor deposition reaction in polysilicon reduction furnace was established by considering mass, momentum and energy transfer simultaneously. Then, CFD software was used to simulate ...Three-dimensional model of chemical vapor deposition reaction in polysilicon reduction furnace was established by considering mass, momentum and energy transfer simultaneously. Then, CFD software was used to simulate the flow, heat transfer and chemical reaction process in reduction furnace and to analyze the change law of deposition characteristic along with the H_2 mole fraction, silicon rod height and silicon rod diameter. The results show that with the increase of H_2 mole fraction, silicon growth rate increases firstly and then decreases. On the contrary, SiHCl_3 conversion rate and unit energy consumption decrease firstly and then increase. Silicon production rate increases constantly. The optimal H_2 mole fraction is 0.8-0.85. With the growth of silicon rod height, Si HCl3 conversion rate, silicon production rate and silicon growth rate increase, while unit energy consumption decreases. In terms of chemical reaction, the higher the silicon rod is, the better the performance is. In the view of the top-heavy situation, the actual silicon rod height is limited to be below 3 m. With the increase of silicon rod diameter, silicon growth rate decreases firstly and then increases. Besides, SiHCl_3 conversion rate and silicon production rate increase, while unit energy consumption first decreases sharply, then becomes steady. In practice, the bigger silicon rod diameter is more suitable. The optimal silicon rod diameter must be over 120 mm.展开更多
In this study,we present an organic field-effect transistor floating-gate memory using polysilicon(poly-Si)as a charge trapping layer.The memory device is fabricated on a N^+-Si/SiO2 substrate.Poly-Si,polymethylmethac...In this study,we present an organic field-effect transistor floating-gate memory using polysilicon(poly-Si)as a charge trapping layer.The memory device is fabricated on a N^+-Si/SiO2 substrate.Poly-Si,polymethylmethacrylate,and pentacene are used as a floating-gate layer,tunneling layer,and active layer,respectively.The device shows bidirectional storage characteristics under the action of programming/erasing(P/E)operation due to the supplied electrons and holes in the channel and the bidirectional charge trapping characteristic of the poly-Si floating-gate.The carrier mobility and switching current ratio(Ion/Ioff ratio)of the device with a tunneling layer thickness of 85 nm are 0.01 cm^2·V^-1·s^-1 and 102,respectively.A large memory window of 9.28 V can be obtained under a P/E voltage of±60 V.展开更多
The effects of different annealing processes on the photovoltaic (PV) properties and the spectral response as well as minority carrier lifetime in the bulk of unanalyzed PF5 ion implantation poly-Si solar cells were i...The effects of different annealing processes on the photovoltaic (PV) properties and the spectral response as well as minority carrier lifetime in the bulk of unanalyzed PF5 ion implantation poly-Si solar cells were investigated. The different hydrogen passivation effects of defects in poly-Si induced by three heat treatment processes are reported. We used RTA-rapid thermal annealing, YAG pulse laser annealing and CTSA-classical three-step annealing for this study. The results show that cells processed by RTA (800°C, 4 sec) achieved the best PV properties and spectral response among all annealed samples. Under this precess condition, no or few defects were induced in bulk. While RTA (>-850°C for 4 sec), CTSA as well as YAG laser processes induced defects of different nature and concentration in the bulk of cells. It is further shown that hydrogen ion implantation significantly improved, the performances of poly-Si cells. It is able to efficiently remove the YAG laser induced defects in bulk. However, it cannot completely passivate the defects induced by CTSA and RTA processes.展开更多
The bending strength of microfabricated polysilicon beams was measured by beam bending using a nanoindenter. Also, the tensile strength of microfabricated polysilicon thin ?lms was measured by tensile testing with a...The bending strength of microfabricated polysilicon beams was measured by beam bending using a nanoindenter. Also, the tensile strength of microfabricated polysilicon thin ?lms was measured by tensile testing with a new microtensile test device. It was found that the bending strength and tensile strength of polysilicon microstructures exerts size e?ect on the size of the specimens. In such cases, the size e?ect can be traced back to the ratio of surface area to volume as the governing parameter. A statistical analysis of the bending strength for various specimen sizes shows that the average bending strength of polysilicon microcantilever beams is 2.885 ± 0.408 GPa. The measured average value of Young’s modulus, 164 ± 1.2 GPa, falls within the theoretical bounds. The average fracture tensile strength is 1.36 GPa with a standard deviation of 0.14 GPa, and the Weibull modulus is 10.4 -11.7, respectively. The tensile testing of 40 specimens on failure results in a recommendation for design that the nominal strain be maintained below 0.0057.展开更多
A unified model of low temperature current gain of polysilicon emitter bipolar transistors based on effective recombination method is presented, incorporating band-gap narrowing, carrier freezing-out, tunneling of hol...A unified model of low temperature current gain of polysilicon emitter bipolar transistors based on effective recombination method is presented, incorporating band-gap narrowing, carrier freezing-out, tunneling of holes through polysilicon/silicon interface oxide layer and reduced mobility mechanism in polysilicon. The modeling results based on this model are in good agreement with experimental data.展开更多
An innovative formaldehyde gas sensor based on thin membrane type metal oxide of Ti O2 layer was designed and fabricated. This sensor under ultraviolet(UV) light emitting diode(LED) illumination exhibits a higher resp...An innovative formaldehyde gas sensor based on thin membrane type metal oxide of Ti O2 layer was designed and fabricated. This sensor under ultraviolet(UV) light emitting diode(LED) illumination exhibits a higher response to formaldehyde than that without UV illumination at low temperature. The sensitivities of the sensor under steady working condition were calculated for different gas concentrations. The sensitivity to formaldehyde of 7.14 mg/m^3 is about 15.91 under UV illumination with response time of 580 s and recovery time of 500 s. The device was fabricated through micro-electro-mechanical system(MEMS) processing technology. First, plasma immersion ion implantation(PIII) was adopted to form black polysilicon, then a nanoscale TiO_2 membrane with thickness of 53 nm was deposited by DC reactive magnetron sputtering to obtain the sensing layer. By such fabrication approaches, the nanoscale polysilicon presents continuous rough surface with thickness of 50 nm, which could improve the porosity of the sensing membrane. The fabrication process can be mass-produced for the MEMS process compatibility.展开更多
In order to accomplish reliable mechanical design of MEMS, the infuences of surface roughness and octadecyltrichlorosilane (OTS) self-assembled monolayers (SAMs) on the mechani- cal properties of micromachined polysil...In order to accomplish reliable mechanical design of MEMS, the infuences of surface roughness and octadecyltrichlorosilane (OTS) self-assembled monolayers (SAMs) on the mechani- cal properties of micromachined polysilicon flms for MEMS are investigated. Surface efect on the fracture properties of micromachined polysilicon flms is evaluated with a new microtensile testing method using a magnet-coil force actuator. Statistical analysis of the surface roughness efects on the tensile strength predicated the surface roughness characterization of polysilicon flms being tested and the direct relation of the mechanical properties with the surface roughness features. The fracture strength decreases with the increase of the surface roughness. The octadecyltrichlorosi- lane self-assembled monolayers coating leads to an increase of the average fracture strength up to 32.46%. Surface roughness and the hydrophobic properties of specimen when coated with OTS flms are the two main factors infuencing the tensile strength of micromachined polysilicon flms for MEMS.展开更多
Non-thermal plasma at atmospheric pressure was explored for the preparation of polysilicon from SiCl4. The power supply sources of positive pulse and alternating current （8 kHz and 100 kHz） were compared for polysil...Non-thermal plasma at atmospheric pressure was explored for the preparation of polysilicon from SiCl4. The power supply sources of positive pulse and alternating current （8 kHz and 100 kHz） were compared for polysilicon preparation. The samples prepared by using the 100 kHz power source were crystalline silicon. The effects of H2 and SiCl4 volume fractions were investigated. The optical emission spectra showed that silicon species played an important role in polysilicon deposition展开更多
A polysilicon-based organic nonvolatile floating-gate memory device with a bottom-gate top-contact configuration is investigated,in which polysilicon is sandwiched between oxide layers as a floating gate.Simulations f...A polysilicon-based organic nonvolatile floating-gate memory device with a bottom-gate top-contact configuration is investigated,in which polysilicon is sandwiched between oxide layers as a floating gate.Simulations for the electrical characteristics of the polysilicon floating gate-based memory device are performed.The shifted transfer characteristics and corresponding charge trapping mechanisms during programing and erasing（P/E） operations at various P/E voltages are discussed.The simulated results show that present memory exhibits a large memory window of 57.5 V,and a high read current on/off ratio of ≈ 10~3.Compared with the reported experimental results,these simulated results indicate that the polysilicon floating gate based memory device demonstrates remarkable memory effects,which shows great promise in device designing and practical application.展开更多
Based on the technology of low temperature poly silicon thin film transistors (poly-Si-TFTs), a novel p-type TFT AMOLED panel with self-scanned driving circuit is introduced in this paper. A shift register formed with...Based on the technology of low temperature poly silicon thin film transistors (poly-Si-TFTs), a novel p-type TFT AMOLED panel with self-scanned driving circuit is introduced in this paper. A shift register formed with novel p-type TFTs is pro- posed to realize the gate driver. A flip-latch cooperated with the shift register is designed to conduct the data writing. In order to verify the validity of the proposed design, the circuits are simulated with SILVACO TCAD tools, using the MODEL in which the paramete...展开更多
文摘A systematic research on the pyrolysis process of polymethysilicone (SAR-2) and the thermostability of the pyrolysis residue was made by the thermogravimetric analysis, DTA and infrared spectroscopy.The experimental results indicate that the pyrolysis residue of SAR-2 converted into the amorphous SiC_xO_(4-x) phase above 900 ℃,the residue at 1200 ℃ is the most thermostable and antioxidant.It is suitable to be used as polysilicone preceramic.
基金support given by the Natural Science Foundation of Nantong(Grant NO.JC2023065)the Research Program of Nantong Institute of Technology(Grant NO.2023XK(B)07).
文摘Here,p-type polysilicon films are fabricated by ex-situ doping method with ammonium tetraborate tetrahydrate(ATT)as the boron source,named ATT-pPoly.The effects of ATT on the properties of polysilicon films are comprehensively analyzed.The Raman spectra reveal that the ATT-pPoly film is composed of grain boundary and crystalline regions.The preferred orientation is the(111)direction.The grain size increases from 16−23 nm to 21−47 nm,by~70%on average.Comparing with other reported films,Hall measurements reveal that the ATT-pPoly film has a higher carrier concentration(>10^(20)cm^(−3))and higher carrier mobility(>30 cm2/(V·s)).The superior properties of the ATT-pPoly film are attributed to the heavy doping and improved grain size.Heavy doping property is proved by the mean sheet resistance(Rsheet,m)and distribution profile.The R_(sheet,m)decreases by more than 30%,and it can be further decreased by 90%if the annealing temperature or duration is increased.The boron concentration of ATT-pPoly film annealed at 950℃ for 45 min is~3×10^(20)cm^(−3),and the distribution is nearly the same,except near the surface.Besides,the standard deviation coefficient(σ)of Rsheet,m is less than 5.0%,which verifies the excellent uniformity of ATT-pPoly film.
基金funded by the Natural Science Foundation Projects in Sichuan Province(No.2022NSFSC0254).
文摘The modified Siemens method is the dominant process for the production of polysilicon,yet it is characterised by high energy consumption.Two models of laboratory-grade Siemens reduction furnace and 12 pairs of rods industrial-grade Siemens chemical vapor deposition(CVD)reduction furnace were established,and the effects of factors such as the diameter of silicon rods,the surface temperature of silicon rods,the air inlet velocity and temperature on the heat transfer process inside the reduction furnace were investigated by numerical simulation.The results show that the convective and radiant heat losses in the furnace increased with the diameter of the silicon rods.Furthermore,the radiant heat loss of the inner and outer rings of silicon rods was inconsistent for the industrial-grade reduction furnace.As the surface temperature of the silicon rods increases,the convective heat loss in the furnace increases,while the radiative heat loss remains relatively constant.When the inlet temperature and inlet velocity increase,the convective heat loss decreases,while the radiant heat loss remains relatively constant.Furthermore,the furnace wall surface emissivity increases,resulting in a significant increase in the amount of radiant heat loss in the furnace.In practice,this can be mitigated by polishing or adding coatings to reduce the furnace wall surface emissivity.
文摘Polysilicon ohmic contacts to n-type 4H-SiC have been fabricated. TLM （transfer length method） test patterns with polysilicon structure are formed on n-wells created by phosphorus ion （P^＋） implantation into a Si-faced p-type 4H-SiC epilayer. The polysilicon is deposited using low-pressure chemical vapor deposition （LPCVD） and doped by phosphorous ions implantation followed by diffusion to obtain a sheet resistance of 22Ω/□. The specific contact resistance pc of n^＋ polysilicon contact to n-type 4H-SiC as low as 3.82 × 10^-5Ω· cm^2 is achieved. The result for sheet resistance Rsh of the phosphorous ion implanted layers in SiC is about 4.9kΩ/□. The mechanisms for n^＋ polysilicon ohmic contact to n-type SiC are discussed.
文摘A new physical current-voltage model for polysilicon thin-film transistors （poly-Si TFTs） is presented. Taking the V-shaped exponential distribution of trap states density into consideration,explicit calculation of surface potential is derived using the Lambert W function, which greatly improves computational efficiency and is critical in circuit simulation. Based on the exponential density of trap states and the calculated surface potential, the drain current characteristics of the subthreshold and the strong inversion region are predicted. A complete and unique drain current expression, including kink effect, is deduced. The model and the experimental data agree well over a wide range of channel lengths and operational regions.
文摘The resistivity instability of the boron-doped polysilicon resistors being a line resistance element of ICs is within the range of several kΩ's,especially when our running the underneath metal interconnects.Polysilicon resistors have been fabricated under various processing conditions as well as some electrical and crystallographic characteristics have been obtained.It is shown the resistivity instability mainly results from the variational carrier mobility.By analyzing the Seto's model,the barrier height and trapped charge density are observed reducing under the Al over layer.Therefore,the resistance instability is also caused by both the charge trapping/detrapping occurring at polysilicon grain boundaries and the resultant variation in the potential barrier height.The formation of high-stability polysilicon resistors in the range of several kΩ's has been decided by compensating the ion implantation,which makes the charge trapping/detrapping at the grain boundary less susceptible to the hydrogen annealing.
文摘The emission microscopy （EMMI） test is proposed as an effective method to control the polysilicon over-etching time of advanced CMOS processing combined with a novel test structure, named a poly-edge structure. From the values of the breakdown voltage （Vbd） of MOS capacitors （poly-edge structure） ,it was observed that,with for the initial polysilicon etching-time, almost all capacitors in one wafer failed under the initial failure model. With the increase of polysilicon over-etching time, the number of the initial failure capacitors decreased. Finally, no initial failure capacitors were observed after the polysilicon over-etching time was increased by 30s. The breakdown samples with the initial failure model and intrinsic failure model underwent EMMI tests. The EMMI test results show that the initial failure of capacitors with poly-edge structures was due to the bridging effect between the silicon substrate and the polysilicon gate caused by the residual polysilicon in the ditch between the shallow-trench isolation region and the active area, which will short the polysilicon gate with silicon substrate after the silicide process.
文摘The validity of a novel, direct and convenient method for micromechanical property measurements by beam bending using a nanoindenter is demonstrated. This method combines a very high load resolution with a nanometric precision in the determination of the microcantilever beam deflection. The method is described clearly. In the deflection of microbeams, the influence of the indenter tip pushing into the top of the microbeams and the curvature across its width must be considered. The measurements were made on single-layer, micro-thick, several kinds of width and length polysilicon beams that were fabricated using conventional integrated circuit (IC) fabrication techniques. The elastic of a polysilicon microcantilever beam will vary linearly with the force and the deformation is thought to be elastic. Furthermore, it suggests that Young modulus of the beam can be determined from the slope of this linear relation. From the load deflection data acquired during bending the mechanical properties of the thin films were determined. Measured Young modulus is 137 GPa with approximately a ±2.9%～±6.3% difference in Young modulus.
基金Project(12C0379) supported by Scientific Research Fund of Hunan Province,China
文摘Three-dimensional model of chemical vapor deposition reaction in polysilicon reduction furnace was established by considering mass, momentum and energy transfer simultaneously. Then, CFD software was used to simulate the flow, heat transfer and chemical reaction process in reduction furnace and to analyze the change law of deposition characteristic along with the H_2 mole fraction, silicon rod height and silicon rod diameter. The results show that with the increase of H_2 mole fraction, silicon growth rate increases firstly and then decreases. On the contrary, SiHCl_3 conversion rate and unit energy consumption decrease firstly and then increase. Silicon production rate increases constantly. The optimal H_2 mole fraction is 0.8-0.85. With the growth of silicon rod height, Si HCl3 conversion rate, silicon production rate and silicon growth rate increase, while unit energy consumption decreases. In terms of chemical reaction, the higher the silicon rod is, the better the performance is. In the view of the top-heavy situation, the actual silicon rod height is limited to be below 3 m. With the increase of silicon rod diameter, silicon growth rate decreases firstly and then increases. Besides, SiHCl_3 conversion rate and silicon production rate increase, while unit energy consumption first decreases sharply, then becomes steady. In practice, the bigger silicon rod diameter is more suitable. The optimal silicon rod diameter must be over 120 mm.
文摘In this study,we present an organic field-effect transistor floating-gate memory using polysilicon(poly-Si)as a charge trapping layer.The memory device is fabricated on a N^+-Si/SiO2 substrate.Poly-Si,polymethylmethacrylate,and pentacene are used as a floating-gate layer,tunneling layer,and active layer,respectively.The device shows bidirectional storage characteristics under the action of programming/erasing(P/E)operation due to the supplied electrons and holes in the channel and the bidirectional charge trapping characteristic of the poly-Si floating-gate.The carrier mobility and switching current ratio(Ion/Ioff ratio)of the device with a tunneling layer thickness of 85 nm are 0.01 cm^2·V^-1·s^-1 and 102,respectively.A large memory window of 9.28 V can be obtained under a P/E voltage of±60 V.
文摘The effects of different annealing processes on the photovoltaic (PV) properties and the spectral response as well as minority carrier lifetime in the bulk of unanalyzed PF5 ion implantation poly-Si solar cells were investigated. The different hydrogen passivation effects of defects in poly-Si induced by three heat treatment processes are reported. We used RTA-rapid thermal annealing, YAG pulse laser annealing and CTSA-classical three-step annealing for this study. The results show that cells processed by RTA (800°C, 4 sec) achieved the best PV properties and spectral response among all annealed samples. Under this precess condition, no or few defects were induced in bulk. While RTA (>-850°C for 4 sec), CTSA as well as YAG laser processes induced defects of different nature and concentration in the bulk of cells. It is further shown that hydrogen ion implantation significantly improved, the performances of poly-Si cells. It is able to efficiently remove the YAG laser induced defects in bulk. However, it cannot completely passivate the defects induced by CTSA and RTA processes.
基金Project supported by the Micro/Nano Science and Technology Center Science Founation of Jiangsu Province (Nos.BK2002147 and 02KJA460001) the Excellent Young Teachers Program of MOE of China and the National Natural ScienceFoundation of China (No. 50135040).
文摘The bending strength of microfabricated polysilicon beams was measured by beam bending using a nanoindenter. Also, the tensile strength of microfabricated polysilicon thin ?lms was measured by tensile testing with a new microtensile test device. It was found that the bending strength and tensile strength of polysilicon microstructures exerts size e?ect on the size of the specimens. In such cases, the size e?ect can be traced back to the ratio of surface area to volume as the governing parameter. A statistical analysis of the bending strength for various specimen sizes shows that the average bending strength of polysilicon microcantilever beams is 2.885 ± 0.408 GPa. The measured average value of Young’s modulus, 164 ± 1.2 GPa, falls within the theoretical bounds. The average fracture tensile strength is 1.36 GPa with a standard deviation of 0.14 GPa, and the Weibull modulus is 10.4 -11.7, respectively. The tensile testing of 40 specimens on failure results in a recommendation for design that the nominal strain be maintained below 0.0057.
基金Supported by National Natural Science Foundation of China
文摘A unified model of low temperature current gain of polysilicon emitter bipolar transistors based on effective recombination method is presented, incorporating band-gap narrowing, carrier freezing-out, tunneling of holes through polysilicon/silicon interface oxide layer and reduced mobility mechanism in polysilicon. The modeling results based on this model are in good agreement with experimental data.
基金supported by the National Natural Science Foundation of China(Nos.61335008,61274119 and 61306141)the National High Technology Research and Development Program of China(No.2015AA042605)the Natural Science Foundation of Jiangsu Province(No.BK20131099)
文摘An innovative formaldehyde gas sensor based on thin membrane type metal oxide of Ti O2 layer was designed and fabricated. This sensor under ultraviolet(UV) light emitting diode(LED) illumination exhibits a higher response to formaldehyde than that without UV illumination at low temperature. The sensitivities of the sensor under steady working condition were calculated for different gas concentrations. The sensitivity to formaldehyde of 7.14 mg/m^3 is about 15.91 under UV illumination with response time of 580 s and recovery time of 500 s. The device was fabricated through micro-electro-mechanical system(MEMS) processing technology. First, plasma immersion ion implantation(PIII) was adopted to form black polysilicon, then a nanoscale TiO_2 membrane with thickness of 53 nm was deposited by DC reactive magnetron sputtering to obtain the sensing layer. By such fabrication approaches, the nanoscale polysilicon presents continuous rough surface with thickness of 50 nm, which could improve the porosity of the sensing membrane. The fabrication process can be mass-produced for the MEMS process compatibility.
基金Project supported by Program for New Century Excellent Talents in University,the National Natural Science Founda-tion of China(Nos.50135040and50475124),the Excellent Young Teachers Program of MOE of China,the Foundation forthe Author of National Excellent Doctoral Dissertation of China(No.200330)and the National Basic Research Programof China(No.2004CB619305).
文摘In order to accomplish reliable mechanical design of MEMS, the infuences of surface roughness and octadecyltrichlorosilane (OTS) self-assembled monolayers (SAMs) on the mechani- cal properties of micromachined polysilicon flms for MEMS are investigated. Surface efect on the fracture properties of micromachined polysilicon flms is evaluated with a new microtensile testing method using a magnet-coil force actuator. Statistical analysis of the surface roughness efects on the tensile strength predicated the surface roughness characterization of polysilicon flms being tested and the direct relation of the mechanical properties with the surface roughness features. The fracture strength decreases with the increase of the surface roughness. The octadecyltrichlorosi- lane self-assembled monolayers coating leads to an increase of the average fracture strength up to 32.46%. Surface roughness and the hydrophobic properties of specimen when coated with OTS flms are the two main factors infuencing the tensile strength of micromachined polysilicon flms for MEMS.
基金support from the Scientific Research Fund of Liaoning Provincial Education Department for Colleges and Universities of China (No. 2008T229)
文摘Non-thermal plasma at atmospheric pressure was explored for the preparation of polysilicon from SiCl4. The power supply sources of positive pulse and alternating current （8 kHz and 100 kHz） were compared for polysilicon preparation. The samples prepared by using the 100 kHz power source were crystalline silicon. The effects of H2 and SiCl4 volume fractions were investigated. The optical emission spectra showed that silicon species played an important role in polysilicon deposition
文摘A polysilicon-based organic nonvolatile floating-gate memory device with a bottom-gate top-contact configuration is investigated,in which polysilicon is sandwiched between oxide layers as a floating gate.Simulations for the electrical characteristics of the polysilicon floating gate-based memory device are performed.The shifted transfer characteristics and corresponding charge trapping mechanisms during programing and erasing（P/E） operations at various P/E voltages are discussed.The simulated results show that present memory exhibits a large memory window of 57.5 V,and a high read current on/off ratio of ≈ 10~3.Compared with the reported experimental results,these simulated results indicate that the polysilicon floating gate based memory device demonstrates remarkable memory effects,which shows great promise in device designing and practical application.
基金supported by the National Natural ScienceFoundation of China(Grant No.60437030)
文摘Based on the technology of low temperature poly silicon thin film transistors (poly-Si-TFTs), a novel p-type TFT AMOLED panel with self-scanned driving circuit is introduced in this paper. A shift register formed with novel p-type TFTs is pro- posed to realize the gate driver. A flip-latch cooperated with the shift register is designed to conduct the data writing. In order to verify the validity of the proposed design, the circuits are simulated with SILVACO TCAD tools, using the MODEL in which the paramete...
