A CuPc/SiO2 sample is fabricated. Its morphology is characterized by atomic force microscopy, and the electron states are investigated by X-ray photoelectron spectroscopy. In order to investigate these spectra in deta...A CuPc/SiO2 sample is fabricated. Its morphology is characterized by atomic force microscopy, and the electron states are investigated by X-ray photoelectron spectroscopy. In order to investigate these spectra in detail, all of these spectra are normalized to the height of the most intense peak,and each component is fitted with a single Gaussian function. Analysis shows that the O element has great bearing on the electron states and that SiO2 layers produced by spurting technology are better than those produced by oxidation technology.展开更多
Slag movement on SiO2-based prism refractories in different slag systems was observed. The cross section shape evolution mechanism was discussed. Two types of shape evolution appear. For PbO-SiO2 slag whose surface te...Slag movement on SiO2-based prism refractories in different slag systems was observed. The cross section shape evolution mechanism was discussed. Two types of shape evolution appear. For PbO-SiO2 slag whose surface tension improves with SiO2 concentration, slag film flows up along four edges under axial Marangoni shear force and wettability. Then, it flows down along four lateral faces under gravity. Corrosion rate at edges is larger than that on lateral faces due to different SiO2 solubilities of ascending and descending flow. Prism cross section shape changes from square to round. For FetO-SiO2 slag whose surface tension reduces with the increase of SiO2 concentration, slag film flows up under the inflence of wettability. Then, it flows down under Marangoni shear force and gravity. Compared to four edges, slag is mainly up and down on four lateral faces due to larger surface tension and size. So, prism cross section shape keeps square.展开更多
Novel models （2× 1） of Si（001）-SiO2 interface structure have been established. The method of the first-principle General Gradient Approximation （GGA） is employed to structurally optimize the established the...Novel models （2× 1） of Si（001）-SiO2 interface structure have been established. The method of the first-principle General Gradient Approximation （GGA） is employed to structurally optimize the established theoretical models under the K-point space of periodic boundary condition. The structures after optimization have been analyzed, and the results show that the interfaces present in disordered state and both Si-O-Si and Si=O structures exist. Meanwhile, the bonding of surface structure is analyzed via the graphics of electron localization function（ELF）.展开更多
Novel SiO2/BiOCl composites were fabricated by decorating BiOCl nanosheets with SiO2 nanoparticles via a simple hydrothermal process. The as-prepared pure BiOCl and SiO2/BiOCl composites were intensively characterized...Novel SiO2/BiOCl composites were fabricated by decorating BiOCl nanosheets with SiO2 nanoparticles via a simple hydrothermal process. The as-prepared pure BiOCl and SiO2/BiOCl composites were intensively characterized by various techniques such as XRD, FT-IR, SEM/TEM, BET, UV-vis, DRS, XPS, and photocurrent measurements. The SiO2/BiOCl composite nanosheets displayed high photocatalytic activity and excellent stability in the degradation of organic pollutants such as phenol, bisphenol A (BPA), and rhodamine B (RhB). With respect to those over bare BiOCl, the degradation rates of RhB, BPA, and phenol over 1.88% SiO2/BiOCl increased 16.5%, 29.0%, and 38.7%, respectively. Radical capturing results suggested that h^+ is the major reactive species and that hydroxyl (·OH) and superoxide (·O2^-) radicals could also be involved in the degradation of organic pollutants. The enhanced photocatalytic performances of SiO2/BiOCl composites can be mainly attributed to the improved texture and the formation of intimate SiO2/BiOCl interfaces, which largely promoted the adsorption of organic pollutants, enhanced the light harvesting, and accelerated the separation of e^– and h^+.展开更多
Vacuum brazing of SiO2 glass ceramic and TC4 alloy using a commercially available TiZrNiCu foil was investigated. The interfacial microstructure and the fractures were examined with an optical microscope （OM） and an...Vacuum brazing of SiO2 glass ceramic and TC4 alloy using a commercially available TiZrNiCu foil was investigated. The interfacial microstructure and the fractures were examined with an optical microscope （OM） and an S-4700 scanning electron microscope （SEM） equipped with an energy dispersive spectrometer （EDS） and an electron probe X-ray microanalyzer （EPMA）. The structure of joint interface was identified by XRD （JDX-3530M）. Meanwhile, the fracture paths of the joints were comprehensively studied. The results show that processing parameters, especially the brazing temperature, have a significant effect on the microstructure and mechanical properties of joints. The typical interface structure is SiO2/Ti2O＋Zr3Si2＋Ti5Si3/（Ti,Zr）＋Ti2O＋ TiZrNiCu/Ti（s.s）/TiZrNiCu＋Ti（s.s）＋Ti2（Cu,Ni）/TC4 from SiO2 glass ceramic to TC4 alloy side. Based on the mechanical property tests, the joints brazed at 880 ℃ for 5 rain has the maximum shear strength of 23 MPa.展开更多
We investigate the effects of NO annealing and forming gas （FG） annealing on the electrical properties of a SiO2/SiC interface by low-temperature conductance measurements. With nitrogen passivation, the density of i...We investigate the effects of NO annealing and forming gas （FG） annealing on the electrical properties of a SiO2/SiC interface by low-temperature conductance measurements. With nitrogen passivation, the density of interface states （DIT） is significantly reduced in the entire energy range, and the shift of flatband voltage, AVFB, is effectively suppressed to less than 0.4 V. However, very fast states are observed after NO annealing and the response frequencies are higher than 1 MHz at room temperature. After additional FG annealing, the DIT and AVFB are further reduced. The values of the DIT decrease to less than 1011 cm-2 eV- 1 for the energy range of Ec - ET 〉/0.4 eV. It is suggested that the fast states in shallow energy levels originated from the N atoms accumulating at the interface by NO annealing. Though FG annealing has a limited effect on these shallow traps, hydrogen can terminate the residual Si and C dangling bonds corresponding to traps at deep energy levels and improve the interface quality further. It is indicated that NO annealing in conjunction with FG annealing will be a better post-oxidation process method for high performance SiC MOSFETs.展开更多
Four kinds of Mg alloys reinforced with carbon fibres were fabricated by a gas pressure infiltration technique. The fibres were pre-coated a SiO2 layer prior to fabrication. DifFerent microstructures and interactions ...Four kinds of Mg alloys reinforced with carbon fibres were fabricated by a gas pressure infiltration technique. The fibres were pre-coated a SiO2 layer prior to fabrication. DifFerent microstructures and interactions in the fibre-matrix interface of these composites were observed by transmission electron microscopy （TEM）. The results showed that the interracial interaction strongly depended on the content of Al in the Mg-based matrices. The microstructure of the interface could then be controlled by adjusting the Al content of the Mgbased matrix. In addition, fibres extracted from different Mg-based matrix all had some degradation owing to the interracial reaction and the fibre-matrix interdiffusion.展开更多
The effect of the different re-oxidation annealing （ROA） processes on the SiO2/SiC interface charac- teristics has been investigated. With different annealing processes, the flat band voltage, effective dielectric c...The effect of the different re-oxidation annealing （ROA） processes on the SiO2/SiC interface charac- teristics has been investigated. With different annealing processes, the flat band voltage, effective dielectric charge density and interface trap density are obtained from the capacitance-voltage curves. It is found that the lowest interface trap density is obtained by the wet-oxidation annealing process at 1050 ℃ for 30 min, while a large num- ber of effective dielectric charges are generated. The components at the SiO2/SiC interface are analyzed by X-ray photoelectron spectroscopy （XPS） testing. It is found that the effective dielectric charges are generated due to the existence of the C and H atoms in the wet-oxidation annealing process.展开更多
Ta is often used as a buffer layer in magnetic multilayers. In this study, Ta/Ni81Fe19/Ta multilayers were deposited by magnetron sputtering on sing-crystal Si with a 300-nm-thick SiO2 film. The composition and chemic...Ta is often used as a buffer layer in magnetic multilayers. In this study, Ta/Ni81Fe19/Ta multilayers were deposited by magnetron sputtering on sing-crystal Si with a 300-nm-thick SiO2 film. The composition and chemical states at the interface region of SiO2/Ta were studied using the X-ray photoelectron spectroscopy (XPS) and peak decomposition technique. The results show that there is an "intermixing layer" at the SiO2/Ta interface due to a thermody-namically favorable reaction: 15 SiO2+37 Ta = 6 Ta2O5 + 5 Ta5Si3. Therefore, the Ta buffer layer thickness used to induce NiFe (111) texture increases.展开更多
The interface defects at the Si/SiO_2 interface in ρ-type silicon (111) MOS structures have been studied by the DLTS method. A dominant defect H_(it),(0.503) at the Si/SiO_2 interface has been found. Its characterist...The interface defects at the Si/SiO_2 interface in ρ-type silicon (111) MOS structures have been studied by the DLTS method. A dominant defect H_(it),(0.503) at the Si/SiO_2 interface has been found. Its characteristics are (i) the average hole ionization Gibbs free energy △G_p≥0.503 eV; (ii) by changing the gate bias when the distance from Fermi level to the top of Si valence band at the Si/SiO_2 interface is less than △G_p there is still the strong DLTS peak; (iii) its hole apparent activation energy increases with the dectease of the height of semiconductor surface potential barrier; and (iv) its hole capture process causes the multiexponential capacitance transience as a function of pulse width and the H_(it)(0.503) level are very difficult to be fully filled with the holes introduced by thepulst with alimited width. All above show that there is a continuous transition energy band between the energy bands of the covalent crystal silicon and the SiO_2 in the Si/SiO_2 systems formed by thermal oxidation; the dominant defect H_(it)(0.503) is distributed in the transition region, and the distance of H_(it)(0.503) level from the top of the valence band increases with the distance from the silicon surface.展开更多
A new technique for accurate determination of the electron and hole capture cross-sections of interface states at the insulator-semiconductor interface has been developed through measuring the initial time variation i...A new technique for accurate determination of the electron and hole capture cross-sections of interface states at the insulator-semiconductor interface has been developed through measuring the initial time variation in the carrier filling capacitance transient, and full consideration is given to the charge-potential feedback effect on carrier capture process. A simplified calculation of the effect is also given. The interface states have been investigated with this technique at the Si-SiO_2 interface in an n-type Si MOS diode. The results show that the electron capture cross-section strongly depends on both temperature and energy.展开更多
Fe_x(SiC_2 )_(1 - x) nanocomposites prepared by using mechanical alloying method were reported. The mi-crostructure character and magnetic properties of Fex (SiO_2) 1 - x nanocomposite samples with different Fe conten...Fe_x(SiC_2 )_(1 - x) nanocomposites prepared by using mechanical alloying method were reported. The mi-crostructure character and magnetic properties of Fex (SiO_2) 1 - x nanocomposite samples with different Fe content and different ball milling time were studied by using X-ray diffraction (XRD), transmission electron microscopy (TEM), Mossbauer spectroscopy, and Faraday magnetic balance in a wide temperature range. The results indicate that the mi-crostructure and magnetic properties are closely related to ball milling time and Fe content. When Fe content is less than 20 wt% , the sample after 80-h ball milling has very complex microstructure. Small α-Fe grains and Fe cluster are implanted in SiO2 matrix. And there are not only isolated α-Fe granular and Fe cluster, but also nanometer scaled sandwich network-like structure. Fex (SiO_2) 1 - x nanocomposite samples display a rich variety of physical and chemical properties as a result of their unique nanostructure, strong interface interaction and inter-osmosis effect in Fe-SiO_2 boundaries, and the grain size effect.展开更多
文摘A CuPc/SiO2 sample is fabricated. Its morphology is characterized by atomic force microscopy, and the electron states are investigated by X-ray photoelectron spectroscopy. In order to investigate these spectra in detail, all of these spectra are normalized to the height of the most intense peak,and each component is fitted with a single Gaussian function. Analysis shows that the O element has great bearing on the electron states and that SiO2 layers produced by spurting technology are better than those produced by oxidation technology.
基金Projects(U1738101,51804023)supported by the National Natural Science Foundation of ChinaProjects(FRF-TP-18-007A1,FRF-MP-18-007)supported by Fundamental Research Funds for the Central Universities,ChinaProject(2019M650489)supported by China Postdoctoral Science Foundation
文摘Slag movement on SiO2-based prism refractories in different slag systems was observed. The cross section shape evolution mechanism was discussed. Two types of shape evolution appear. For PbO-SiO2 slag whose surface tension improves with SiO2 concentration, slag film flows up along four edges under axial Marangoni shear force and wettability. Then, it flows down along four lateral faces under gravity. Corrosion rate at edges is larger than that on lateral faces due to different SiO2 solubilities of ascending and descending flow. Prism cross section shape changes from square to round. For FetO-SiO2 slag whose surface tension reduces with the increase of SiO2 concentration, slag film flows up under the inflence of wettability. Then, it flows down under Marangoni shear force and gravity. Compared to four edges, slag is mainly up and down on four lateral faces due to larger surface tension and size. So, prism cross section shape keeps square.
基金Supported by the National Grand Fundamental Research 973 Program of China (No. 51310Z07-3) and the Research Program of Application of Sichuan Department of Science and Technology (No. 02GY029-006)
文摘Novel models （2× 1） of Si（001）-SiO2 interface structure have been established. The method of the first-principle General Gradient Approximation （GGA） is employed to structurally optimize the established theoretical models under the K-point space of periodic boundary condition. The structures after optimization have been analyzed, and the results show that the interfaces present in disordered state and both Si-O-Si and Si=O structures exist. Meanwhile, the bonding of surface structure is analyzed via the graphics of electron localization function（ELF）.
基金funding from the National Natural Science Foundation of China (21567008, 21707055)the Program for Innovative Research Team of Guangdong University of Petrochemical Technology+4 种基金the Yangfan talents Project of Guangdong Provincethe Innovation-driven “5511” Program in Jiangxi Province (20165BCB18014)the Funding Program for Academic and Technological Leaders of Major Disciplines in Jiangxi Province (20172BCB22018)the Program for New Century Excellent Talents in Fujian Province Universitythe Natural Science Foundation for Distinguished Young Scholars of Hunan Province, China (2017JJ1026)~~
文摘Novel SiO2/BiOCl composites were fabricated by decorating BiOCl nanosheets with SiO2 nanoparticles via a simple hydrothermal process. The as-prepared pure BiOCl and SiO2/BiOCl composites were intensively characterized by various techniques such as XRD, FT-IR, SEM/TEM, BET, UV-vis, DRS, XPS, and photocurrent measurements. The SiO2/BiOCl composite nanosheets displayed high photocatalytic activity and excellent stability in the degradation of organic pollutants such as phenol, bisphenol A (BPA), and rhodamine B (RhB). With respect to those over bare BiOCl, the degradation rates of RhB, BPA, and phenol over 1.88% SiO2/BiOCl increased 16.5%, 29.0%, and 38.7%, respectively. Radical capturing results suggested that h^+ is the major reactive species and that hydroxyl (·OH) and superoxide (·O2^-) radicals could also be involved in the degradation of organic pollutants. The enhanced photocatalytic performances of SiO2/BiOCl composites can be mainly attributed to the improved texture and the formation of intimate SiO2/BiOCl interfaces, which largely promoted the adsorption of organic pollutants, enhanced the light harvesting, and accelerated the separation of e^– and h^+.
基金Project(50705022) supported by the National Natural Science Foundation of ChinaProject(HIT0804) supported by the Foundation of the National Key Laboratory of Precision Hot Processing of Metals,ChinaProject supported by Program of Excellent Team in Harbin Institute of Technology,China
文摘Vacuum brazing of SiO2 glass ceramic and TC4 alloy using a commercially available TiZrNiCu foil was investigated. The interfacial microstructure and the fractures were examined with an optical microscope （OM） and an S-4700 scanning electron microscope （SEM） equipped with an energy dispersive spectrometer （EDS） and an electron probe X-ray microanalyzer （EPMA）. The structure of joint interface was identified by XRD （JDX-3530M）. Meanwhile, the fracture paths of the joints were comprehensively studied. The results show that processing parameters, especially the brazing temperature, have a significant effect on the microstructure and mechanical properties of joints. The typical interface structure is SiO2/Ti2O＋Zr3Si2＋Ti5Si3/（Ti,Zr）＋Ti2O＋ TiZrNiCu/Ti（s.s）/TiZrNiCu＋Ti（s.s）＋Ti2（Cu,Ni）/TC4 from SiO2 glass ceramic to TC4 alloy side. Based on the mechanical property tests, the joints brazed at 880 ℃ for 5 rain has the maximum shear strength of 23 MPa.
基金supported by the National Natural Science Foundation of China(Nos.61106080,61275042)the National Science and Technology Major Project of the Ministry of Science and Technology of China(No.2013ZX02305)
文摘We investigate the effects of NO annealing and forming gas （FG） annealing on the electrical properties of a SiO2/SiC interface by low-temperature conductance measurements. With nitrogen passivation, the density of interface states （DIT） is significantly reduced in the entire energy range, and the shift of flatband voltage, AVFB, is effectively suppressed to less than 0.4 V. However, very fast states are observed after NO annealing and the response frequencies are higher than 1 MHz at room temperature. After additional FG annealing, the DIT and AVFB are further reduced. The values of the DIT decrease to less than 1011 cm-2 eV- 1 for the energy range of Ec - ET 〉/0.4 eV. It is suggested that the fast states in shallow energy levels originated from the N atoms accumulating at the interface by NO annealing. Though FG annealing has a limited effect on these shallow traps, hydrogen can terminate the residual Si and C dangling bonds corresponding to traps at deep energy levels and improve the interface quality further. It is indicated that NO annealing in conjunction with FG annealing will be a better post-oxidation process method for high performance SiC MOSFETs.
文摘Four kinds of Mg alloys reinforced with carbon fibres were fabricated by a gas pressure infiltration technique. The fibres were pre-coated a SiO2 layer prior to fabrication. DifFerent microstructures and interactions in the fibre-matrix interface of these composites were observed by transmission electron microscopy （TEM）. The results showed that the interracial interaction strongly depended on the content of Al in the Mg-based matrices. The microstructure of the interface could then be controlled by adjusting the Al content of the Mgbased matrix. In addition, fibres extracted from different Mg-based matrix all had some degradation owing to the interracial reaction and the fibre-matrix interdiffusion.
基金Project supported by the National Natural Science Foundation of China(Nos.51272202,61234006,61274079)
文摘The effect of the different re-oxidation annealing （ROA） processes on the SiO2/SiC interface charac- teristics has been investigated. With different annealing processes, the flat band voltage, effective dielectric charge density and interface trap density are obtained from the capacitance-voltage curves. It is found that the lowest interface trap density is obtained by the wet-oxidation annealing process at 1050 ℃ for 30 min, while a large num- ber of effective dielectric charges are generated. The components at the SiO2/SiC interface are analyzed by X-ray photoelectron spectroscopy （XPS） testing. It is found that the effective dielectric charges are generated due to the existence of the C and H atoms in the wet-oxidation annealing process.
基金This work was supported by the Natural Science Foundation of Beijing (Grant Nos. 2012011 and 19890310).
文摘Ta is often used as a buffer layer in magnetic multilayers. In this study, Ta/Ni81Fe19/Ta multilayers were deposited by magnetron sputtering on sing-crystal Si with a 300-nm-thick SiO2 film. The composition and chemical states at the interface region of SiO2/Ta were studied using the X-ray photoelectron spectroscopy (XPS) and peak decomposition technique. The results show that there is an "intermixing layer" at the SiO2/Ta interface due to a thermody-namically favorable reaction: 15 SiO2+37 Ta = 6 Ta2O5 + 5 Ta5Si3. Therefore, the Ta buffer layer thickness used to induce NiFe (111) texture increases.
基金Project supported by the National Natural Science Foundation of China.
文摘The interface defects at the Si/SiO_2 interface in ρ-type silicon (111) MOS structures have been studied by the DLTS method. A dominant defect H_(it),(0.503) at the Si/SiO_2 interface has been found. Its characteristics are (i) the average hole ionization Gibbs free energy △G_p≥0.503 eV; (ii) by changing the gate bias when the distance from Fermi level to the top of Si valence band at the Si/SiO_2 interface is less than △G_p there is still the strong DLTS peak; (iii) its hole apparent activation energy increases with the dectease of the height of semiconductor surface potential barrier; and (iv) its hole capture process causes the multiexponential capacitance transience as a function of pulse width and the H_(it)(0.503) level are very difficult to be fully filled with the holes introduced by thepulst with alimited width. All above show that there is a continuous transition energy band between the energy bands of the covalent crystal silicon and the SiO_2 in the Si/SiO_2 systems formed by thermal oxidation; the dominant defect H_(it)(0.503) is distributed in the transition region, and the distance of H_(it)(0.503) level from the top of the valence band increases with the distance from the silicon surface.
文摘A new technique for accurate determination of the electron and hole capture cross-sections of interface states at the insulator-semiconductor interface has been developed through measuring the initial time variation in the carrier filling capacitance transient, and full consideration is given to the charge-potential feedback effect on carrier capture process. A simplified calculation of the effect is also given. The interface states have been investigated with this technique at the Si-SiO_2 interface in an n-type Si MOS diode. The results show that the electron capture cross-section strongly depends on both temperature and energy.
基金Project supported by the Foundation of State ScienceTechnology Commission of China the Natural Science Foundation of Anhui Province
文摘Fe_x(SiC_2 )_(1 - x) nanocomposites prepared by using mechanical alloying method were reported. The mi-crostructure character and magnetic properties of Fex (SiO_2) 1 - x nanocomposite samples with different Fe content and different ball milling time were studied by using X-ray diffraction (XRD), transmission electron microscopy (TEM), Mossbauer spectroscopy, and Faraday magnetic balance in a wide temperature range. The results indicate that the mi-crostructure and magnetic properties are closely related to ball milling time and Fe content. When Fe content is less than 20 wt% , the sample after 80-h ball milling has very complex microstructure. Small α-Fe grains and Fe cluster are implanted in SiO2 matrix. And there are not only isolated α-Fe granular and Fe cluster, but also nanometer scaled sandwich network-like structure. Fex (SiO_2) 1 - x nanocomposite samples display a rich variety of physical and chemical properties as a result of their unique nanostructure, strong interface interaction and inter-osmosis effect in Fe-SiO_2 boundaries, and the grain size effect.
