介绍了多波段红外探测器的应用开发进展,并且针对多波段信号同时探测的红外器件特点进行了读出电路设计。其中,Pixel输入级为多波段红外探测器读出电路设计的核心关键模块之一。本文设计采用了缓冲直接注入型(Buffered Direct Injection...介绍了多波段红外探测器的应用开发进展,并且针对多波段信号同时探测的红外器件特点进行了读出电路设计。其中,Pixel输入级为多波段红外探测器读出电路设计的核心关键模块之一。本文设计采用了缓冲直接注入型(Buffered Direct Injection,BDI)像素输入级电路结构,具有高稳定性、低等效输入阻抗的特点,有效提高长波器件的注入效率,并且为光电探测器件提供了稳定的工作条件。以CMOS 0.18μm 5 V标准工艺基础,完成了全电路设计与模拟仿真。结果表明:70 K低温下电路功能正常,40μm间距内含有短、中、长4波段像素输入级,输入级积分信号输出线性度达到99.7%,噪声不超过0.3 mV。展开更多
军用红外探测器需要使用工作在各种红外波段的大规格、高均匀性多色焦平面阵列器件。满足这些要求的一个候选者就是量子阱红外(光电)探测器(Quantum Well Infrared Photodetector,QWIP)。作为新一代红外探测器,QWIP基于极薄半导体异质...军用红外探测器需要使用工作在各种红外波段的大规格、高均匀性多色焦平面阵列器件。满足这些要求的一个候选者就是量子阱红外(光电)探测器(Quantum Well Infrared Photodetector,QWIP)。作为新一代红外探测器,QWIP基于极薄半导体异质结构中的载流子束缚效应。GaAs/AlGaAs/QWIP的主要优点包括标准的Ⅲ-Ⅴ族衬底材料和技术、良好的热稳定性、大面积、低研发成本以及抗辐射性。QWIP的另一个重要优点是具有带隙工程能力。可以通过调节量子阱宽度和势垒组分设计出满足特殊要求(例如多色焦平面列阵应用)的器件结构。介绍了对QWIP探测物理机制的理解以及近年来多色QWIP技术的发展状况。展开更多
军用红外探测器需要使用工作在各种红外波段的大规格、高均匀性多色焦平面阵列器件。满足这些要求的一个候选者就是量子阱红外(光电)探测器(Quantum Well Infrared Photodetector,QWIP)。作为新一代红外探测器,QWIP基于极薄半导体异质...军用红外探测器需要使用工作在各种红外波段的大规格、高均匀性多色焦平面阵列器件。满足这些要求的一个候选者就是量子阱红外(光电)探测器(Quantum Well Infrared Photodetector,QWIP)。作为新一代红外探测器,QWIP基于极薄半导体异质结构中的载流子束缚效应。GaAs/AlGaAs/QWIP的主要优点包括标准的Ⅲ-Ⅴ族衬底材料和技术、良好的热稳定性、大面积、低研发成本以及抗辐射性。QWIP的另一个重要优点是具有带隙工程能力。可以通过调节量子阱宽度和势垒组分设计出满足特殊要求(例如多色焦平面列阵应用)的器件结构。介绍了对QWIP探测物理机制的理解以及近年来多色QWIP技术的发展状况。展开更多
Multicolor photodetection,essential for applications in infrared imaging,environ-mental monitoring,and spectral analysis,is often limited by the narrow bandgaps of conventional materials,which struggle with speed,sens...Multicolor photodetection,essential for applications in infrared imaging,environ-mental monitoring,and spectral analysis,is often limited by the narrow bandgaps of conventional materials,which struggle with speed,sensitivity,and room-temperature operation.We address these issues with a multicolor uncooled photo-detector based on an asymmetric Au/SnS/Gr vertical heterojunction with inversion-symmetry breaking.This design utilizes the complementary bandgaps of SnS and graphene to enhance the efficiency of carriers'transport through consis-tently oriented built-in electric fields,achieving significant advancements in direc-tional photoresponse.The device demonstrates highly sensitive photoelectric detection performance,such as a responsivity(R)of 55.4–89.7 A W^(–1)with rapid response times of approximately 104μs,and exceptional detectivity(D^(*))of 2.38×10^(10)Jones-8.19×10^(13)Jones from visible(520 nm)to infrared(2000 nm)light,making it suitable for applications demanding an imaging resolution of-0.5 mm.Additionally,the comparative analysis reveals that the asymmetric ver-tical heterojunction outperforms its counterparts,exhibiting approximately 9-fold the photoresponse of symmetric vertical heterojunction and almost 100-fold that of symmetric horizontal heterojunction.This highly sensitive multicolor detector holds significant promise for applications in advanced versatile object detection and imaging recognition systems.展开更多
文摘军用红外探测器需要使用工作在各种红外波段的大规格、高均匀性多色焦平面阵列器件。满足这些要求的一个候选者就是量子阱红外(光电)探测器(Quantum Well Infrared Photodetector,QWIP)。作为新一代红外探测器,QWIP基于极薄半导体异质结构中的载流子束缚效应。GaAs/AlGaAs/QWIP的主要优点包括标准的Ⅲ-Ⅴ族衬底材料和技术、良好的热稳定性、大面积、低研发成本以及抗辐射性。QWIP的另一个重要优点是具有带隙工程能力。可以通过调节量子阱宽度和势垒组分设计出满足特殊要求(例如多色焦平面列阵应用)的器件结构。介绍了对QWIP探测物理机制的理解以及近年来多色QWIP技术的发展状况。
文摘军用红外探测器需要使用工作在各种红外波段的大规格、高均匀性多色焦平面阵列器件。满足这些要求的一个候选者就是量子阱红外(光电)探测器(Quantum Well Infrared Photodetector,QWIP)。作为新一代红外探测器,QWIP基于极薄半导体异质结构中的载流子束缚效应。GaAs/AlGaAs/QWIP的主要优点包括标准的Ⅲ-Ⅴ族衬底材料和技术、良好的热稳定性、大面积、低研发成本以及抗辐射性。QWIP的另一个重要优点是具有带隙工程能力。可以通过调节量子阱宽度和势垒组分设计出满足特殊要求(例如多色焦平面列阵应用)的器件结构。介绍了对QWIP探测物理机制的理解以及近年来多色QWIP技术的发展状况。
基金National Key Research and Development Program of China,Grant/Award Number:2023YFA1406900Strategic Priority Research Program(B)of Chinese Academy of Sciences,Grant/Award Numbers:XDB0580000,GJ0090406,XDB43010200+7 种基金National Natural Science Foundation of China,Grant/Award Numbers:62222514,62350073,U2341226,61991440,91850208,62204249,62005249Youth Innovation Promotion Association of Chinese Academy of Sciences,Grant/Award Number:Y2021070Shanghai Science and Technology Committee,Grant/Award Numbers:23ZR1482000,22JC1402900Shanghai Municipal Science and Technology Major Project,Grant/Award Number:2019SHZDZX01Open Fund of State Key Laboratory of Infrared Physics,Grant/Award Number:SITP-NLIST-YB-2023-13Natural Science Foundation of Zhejiang Province,Grant/Award Numbers:LZ24F050006,LQ20F050005,LR22F050004Excellent Postdoctoral Research Projects of Zhejiang Province,Grant/Award Number:ZJ2021019Research Funds of Hangzhou Institute for Advanced Study,UCAS,Grant/Award Numbers:B02006C019025,B02006C021010。
文摘Multicolor photodetection,essential for applications in infrared imaging,environ-mental monitoring,and spectral analysis,is often limited by the narrow bandgaps of conventional materials,which struggle with speed,sensitivity,and room-temperature operation.We address these issues with a multicolor uncooled photo-detector based on an asymmetric Au/SnS/Gr vertical heterojunction with inversion-symmetry breaking.This design utilizes the complementary bandgaps of SnS and graphene to enhance the efficiency of carriers'transport through consis-tently oriented built-in electric fields,achieving significant advancements in direc-tional photoresponse.The device demonstrates highly sensitive photoelectric detection performance,such as a responsivity(R)of 55.4–89.7 A W^(–1)with rapid response times of approximately 104μs,and exceptional detectivity(D^(*))of 2.38×10^(10)Jones-8.19×10^(13)Jones from visible(520 nm)to infrared(2000 nm)light,making it suitable for applications demanding an imaging resolution of-0.5 mm.Additionally,the comparative analysis reveals that the asymmetric ver-tical heterojunction outperforms its counterparts,exhibiting approximately 9-fold the photoresponse of symmetric vertical heterojunction and almost 100-fold that of symmetric horizontal heterojunction.This highly sensitive multicolor detector holds significant promise for applications in advanced versatile object detection and imaging recognition systems.
