Technology for safe firing area maps was introduced firstly,and then potential danger after the launching of shells by an antiaircraft gun and a rocket was analyzed.Finally,problems in the process of applying the regu...Technology for safe firing area maps was introduced firstly,and then potential danger after the launching of shells by an antiaircraft gun and a rocket was analyzed.Finally,problems in the process of applying the regulations and their solutions were discussed.The application of safe firing area maps can provide technical support for the efficient development of weather modification operation.展开更多
A novel silicon carbide(SiC) trench metal–oxide–semiconductor field-effect transistor(MOSFET) with a dual shield gate(DSG) and optimized junction field-effect transistor(JFET) layer(ODSG-TMOS) is proposed. The combi...A novel silicon carbide(SiC) trench metal–oxide–semiconductor field-effect transistor(MOSFET) with a dual shield gate(DSG) and optimized junction field-effect transistor(JFET) layer(ODSG-TMOS) is proposed. The combination of the DSG and optimized JFET layer not only significantly improves the device’s dynamic performance but also greatly enhances the safe operating area(SOA). Numerical analysis is carried out with Silvaco TCAD to study the performance of the proposed structure. Simulation results show that comparing with the conventional asymmetric trench MOSFET(Con-ATMOS), the specific on-resistance(Ron,sp) is significantly reduced at almost the same avalanche breakdown voltage(BVav). Moreover, the DSG structure brings about much smaller reverse transfer capacitance(Crss) and input capacitance(Ciss), which helps to reduce the gate–drain charge(Qgd) and gate charge(Qg). Therefore, the high frequency figure of merit(HFFOM) of Ron,sp·Qgdand Ron,sp· Qgfor the proposed ODSG-TMOS are improved by 83.5% and 76.4%, respectively.The switching power loss of the proposed ODSG-TMOS is 77.0% lower than that of the Con-ATMOS. In addition, the SOA of the proposed device is also enhanced. The saturation drain current(Id,sat) at a gate voltage(Vgs) of 15 V for the ODSGTMOS is reduced by 17.2% owing to the JFET effect provided by the lower shield gate(SG) at a large drain voltage. With the reduced Id,sat, the short-circuit withstand time is improved by 87.5% compared with the Con-ATMOS. The large-current turn-off capability is also improved, which is important for the widely used inductive load applications.展开更多
To examine the influence of the harsh environment in plateau areas on the operating speed of vehicles,advanced speed prediction models for curved segments are established based on observed actual speed data.First,the ...To examine the influence of the harsh environment in plateau areas on the operating speed of vehicles,advanced speed prediction models for curved segments are established based on observed actual speed data.First,the speed characteristics at the starting,mid,and end points of a plane curve were observed on Lalin Highway and China National Highway 318 with Bushnell s handheld radar speedometer 10-1911CN.Second,the stepwise regression method was proposed to determine the significant parameters and propose the prediction models of the operating speed of cars and large vehicles for the two highways.Finally,reserved test group data were utilized to prove the validity and practicality of the proposed models.Compared with traditional methods,the established models can produce more accurate prediction results and deeply examine the nonlinear relationships between parameters and the predicted operating speed.This study provides a considerate direction and basis for the operating speed prediction model for other segments in plateau regions.展开更多
An analytical breakdown model under on state condition for high voltage RESURF LDMOS is proposed.The model considers the drift velocity saturation of carriers and influence of parasitic bipolar transistor.As a result...An analytical breakdown model under on state condition for high voltage RESURF LDMOS is proposed.The model considers the drift velocity saturation of carriers and influence of parasitic bipolar transistor.As a result,electric field profile of n drift in LDMOS at on state is obtained.Based on this model,the electric SOA of LDMOS can be determined.The analytical results partially fit to our numerical (by MEDICI) and experiment results.This model is an aid to understand the device physics during on state accurately and it also directs high voltage LDMOS design.展开更多
The limited area 5-level primitive equation model,as the first operational precipitation forecast model in China,has been run at Beijing (National) Meteorological Center (BMC) for more than four years.The opera- tiona...The limited area 5-level primitive equation model,as the first operational precipitation forecast model in China,has been run at Beijing (National) Meteorological Center (BMC) for more than four years.The opera- tional results show that this model gives continuous services,and the forecast skill is satisfied for the forecast of some weather situations,such as extratropical cyclone,front and the precipitation associated with them. The forecast guides are widely used at the local weather services now.展开更多
基金Supported by Project for Research on Meteorological Science and Technology of Weifang Meteorological Bureau(2016wfqxkt04)
文摘Technology for safe firing area maps was introduced firstly,and then potential danger after the launching of shells by an antiaircraft gun and a rocket was analyzed.Finally,problems in the process of applying the regulations and their solutions were discussed.The application of safe firing area maps can provide technical support for the efficient development of weather modification operation.
基金Project supported by the China Postdoctoral Science Foundation (Grant No. 2020M682607)。
文摘A novel silicon carbide(SiC) trench metal–oxide–semiconductor field-effect transistor(MOSFET) with a dual shield gate(DSG) and optimized junction field-effect transistor(JFET) layer(ODSG-TMOS) is proposed. The combination of the DSG and optimized JFET layer not only significantly improves the device’s dynamic performance but also greatly enhances the safe operating area(SOA). Numerical analysis is carried out with Silvaco TCAD to study the performance of the proposed structure. Simulation results show that comparing with the conventional asymmetric trench MOSFET(Con-ATMOS), the specific on-resistance(Ron,sp) is significantly reduced at almost the same avalanche breakdown voltage(BVav). Moreover, the DSG structure brings about much smaller reverse transfer capacitance(Crss) and input capacitance(Ciss), which helps to reduce the gate–drain charge(Qgd) and gate charge(Qg). Therefore, the high frequency figure of merit(HFFOM) of Ron,sp·Qgdand Ron,sp· Qgfor the proposed ODSG-TMOS are improved by 83.5% and 76.4%, respectively.The switching power loss of the proposed ODSG-TMOS is 77.0% lower than that of the Con-ATMOS. In addition, the SOA of the proposed device is also enhanced. The saturation drain current(Id,sat) at a gate voltage(Vgs) of 15 V for the ODSGTMOS is reduced by 17.2% owing to the JFET effect provided by the lower shield gate(SG) at a large drain voltage. With the reduced Id,sat, the short-circuit withstand time is improved by 87.5% compared with the Con-ATMOS. The large-current turn-off capability is also improved, which is important for the widely used inductive load applications.
基金The National Natural Science Foundation of China(No.51768063,51868068)。
文摘To examine the influence of the harsh environment in plateau areas on the operating speed of vehicles,advanced speed prediction models for curved segments are established based on observed actual speed data.First,the speed characteristics at the starting,mid,and end points of a plane curve were observed on Lalin Highway and China National Highway 318 with Bushnell s handheld radar speedometer 10-1911CN.Second,the stepwise regression method was proposed to determine the significant parameters and propose the prediction models of the operating speed of cars and large vehicles for the two highways.Finally,reserved test group data were utilized to prove the validity and practicality of the proposed models.Compared with traditional methods,the established models can produce more accurate prediction results and deeply examine the nonlinear relationships between parameters and the predicted operating speed.This study provides a considerate direction and basis for the operating speed prediction model for other segments in plateau regions.
文摘An analytical breakdown model under on state condition for high voltage RESURF LDMOS is proposed.The model considers the drift velocity saturation of carriers and influence of parasitic bipolar transistor.As a result,electric field profile of n drift in LDMOS at on state is obtained.Based on this model,the electric SOA of LDMOS can be determined.The analytical results partially fit to our numerical (by MEDICI) and experiment results.This model is an aid to understand the device physics during on state accurately and it also directs high voltage LDMOS design.
文摘The limited area 5-level primitive equation model,as the first operational precipitation forecast model in China,has been run at Beijing (National) Meteorological Center (BMC) for more than four years.The opera- tional results show that this model gives continuous services,and the forecast skill is satisfied for the forecast of some weather situations,such as extratropical cyclone,front and the precipitation associated with them. The forecast guides are widely used at the local weather services now.
