Effect of flip chip bonding parameters on microstructure at the interconnect interface and shear properties of 64.8Sn35.2Pb microbumps were investigated in this work.Results show that the main intermetallic compound(I...Effect of flip chip bonding parameters on microstructure at the interconnect interface and shear properties of 64.8Sn35.2Pb microbumps were investigated in this work.Results show that the main intermetallic compound(IMC)at the interconnect interface is(Ni,Cu)_(3)Sn_(4)phase,and meanwhile a small amount of(Cu,Ni)_(6)Sn_(5)phase with a size of 50−100 nm is formed around(Ni,Cu)_(3)Sn_(4)phase.The orientation relationship of[-1-56](Ni,Cu)_(3)Sn_(4)//[152](Cu,Ni)_(6)Sn_(5)and(601)(Ni,Cu)_(3)Sn_(4)//(-201)(Cu,Ni)_(6)Sn_(5)is found between these two phases,and the atomic matching at the interface of the two phases is low.The highest shear force of 77.3 gf is achieved in the 64.8Sn35.2Pb microbump at the peak temperature of 250℃and parameter V1 because dense IMCs and no cracks form at the interconnect interface.Two typical fracture modes of microbumps are determined as solder fracture and mixed fracture.The high thermal stress presenting in the thick IMCs layer induces crack initiation,and cracks propagate along theα/βphase boundaries in the Sn-Pb solder under shear force,leading to a mixed fracture mode in the microbumps.展开更多
随着摩尔定律指引下的晶体管微缩逼近物理极限,先进封装技术通过系统微型化与异构集成,成为突破芯片性能瓶颈的关键路径。作为先进封装的核心分支,2.5D封装通过硅/玻璃中介层实现高密度互连与多芯片异构集成,兼具高带宽、低延迟和小型...随着摩尔定律指引下的晶体管微缩逼近物理极限,先进封装技术通过系统微型化与异构集成,成为突破芯片性能瓶颈的关键路径。作为先进封装的核心分支,2.5D封装通过硅/玻璃中介层实现高密度互连与多芯片异构集成,兼具高带宽、低延迟和小型化优势,广泛应用于人工智能、高性能计算及移动电子领域。系统阐述了2.5D封装的核心结构(如Co Wo S、EMIB和I-Cube)及其技术特征,重点剖析了Chiplet模块化设计、硅通孔(TSV)工艺优化、微凸点可靠性提升、铜-铜直接键合界面工程以及再布线层多物理场协同设计等关键技术的最新进展。未来研究需聚焦低成本玻璃基板、原子层沉积技术抑制界面氧化以及多物理场协同设计等方面,以突破良率和散热瓶颈,推动2.5D封装在后摩尔时代高算力场景中的广泛应用。展开更多
Metallurgical challenges in controlling the microstructural stability of Cu and solder microbumps in 3D IC packaging technol-ogy are discussed. Using uni-directional 【111】 oriented nanotwinned Cu, the controlled gro...Metallurgical challenges in controlling the microstructural stability of Cu and solder microbumps in 3D IC packaging technol-ogy are discussed. Using uni-directional 【111】 oriented nanotwinned Cu, the controlled growth of oriented Cu6Sn5 on the nanotwinned Cu and its transformation to Cu3Sn without Kirkendall voids have been achieved. In order to join a stack of Si chips into a 3D device, multiple reflows of solder microbumps may be required; we consider localized heating to do so by the use of self-sustained explosive reaction in multi-layered Al/Ni thin films of nano thickness. It avoids re-melting of those solder joints which have been formed already in the 3D stacking structure.展开更多
基金Project(U2341254)supported by Ye Qisun Science Foundation of National Natural Science Foundation of ChinaProject(52475406)supported by the National Nature Science Foundation of ChinaProject(2024CY2-GJHX-32)supported by the Key R&D Program of Shaanxi Province,China。
文摘Effect of flip chip bonding parameters on microstructure at the interconnect interface and shear properties of 64.8Sn35.2Pb microbumps were investigated in this work.Results show that the main intermetallic compound(IMC)at the interconnect interface is(Ni,Cu)_(3)Sn_(4)phase,and meanwhile a small amount of(Cu,Ni)_(6)Sn_(5)phase with a size of 50−100 nm is formed around(Ni,Cu)_(3)Sn_(4)phase.The orientation relationship of[-1-56](Ni,Cu)_(3)Sn_(4)//[152](Cu,Ni)_(6)Sn_(5)and(601)(Ni,Cu)_(3)Sn_(4)//(-201)(Cu,Ni)_(6)Sn_(5)is found between these two phases,and the atomic matching at the interface of the two phases is low.The highest shear force of 77.3 gf is achieved in the 64.8Sn35.2Pb microbump at the peak temperature of 250℃and parameter V1 because dense IMCs and no cracks form at the interconnect interface.Two typical fracture modes of microbumps are determined as solder fracture and mixed fracture.The high thermal stress presenting in the thick IMCs layer induces crack initiation,and cracks propagate along theα/βphase boundaries in the Sn-Pb solder under shear force,leading to a mixed fracture mode in the microbumps.
文摘随着摩尔定律指引下的晶体管微缩逼近物理极限,先进封装技术通过系统微型化与异构集成,成为突破芯片性能瓶颈的关键路径。作为先进封装的核心分支,2.5D封装通过硅/玻璃中介层实现高密度互连与多芯片异构集成,兼具高带宽、低延迟和小型化优势,广泛应用于人工智能、高性能计算及移动电子领域。系统阐述了2.5D封装的核心结构(如Co Wo S、EMIB和I-Cube)及其技术特征,重点剖析了Chiplet模块化设计、硅通孔(TSV)工艺优化、微凸点可靠性提升、铜-铜直接键合界面工程以及再布线层多物理场协同设计等关键技术的最新进展。未来研究需聚焦低成本玻璃基板、原子层沉积技术抑制界面氧化以及多物理场协同设计等方面,以突破良率和散热瓶颈,推动2.5D封装在后摩尔时代高算力场景中的广泛应用。
文摘Metallurgical challenges in controlling the microstructural stability of Cu and solder microbumps in 3D IC packaging technol-ogy are discussed. Using uni-directional 【111】 oriented nanotwinned Cu, the controlled growth of oriented Cu6Sn5 on the nanotwinned Cu and its transformation to Cu3Sn without Kirkendall voids have been achieved. In order to join a stack of Si chips into a 3D device, multiple reflows of solder microbumps may be required; we consider localized heating to do so by the use of self-sustained explosive reaction in multi-layered Al/Ni thin films of nano thickness. It avoids re-melting of those solder joints which have been formed already in the 3D stacking structure.
