摘要
随着先进封装技术向微型化、高性能方向发展,集成电路芯片锡基微凸点的直径持续减小至微米尺度,通过单个凸点的电流密度随直径减小呈平方增加,其电迁移行为与机理研究对集成电路芯片互连可靠性评估与设计具有重要价值。本文归纳分析了芯片互连微凸点(焊点)电迁移现象的物理本质、主要影响因素和研究方法;系统综述了微焊点固-固电迁移过程中的极性效应、反极性效应和两相分离等电迁移行为特征与液-固电迁移过程中原子迁移、相析出和相溶解等电迁移行为特征;梳理评价了电迁移寿命的评估模型及修正模型;最后阐明了微焊点电迁移可靠性提升的方法,并展望了集成电路芯片互连锡基微凸点电迁移未来的研究方向和可靠性分析方法。
With advancements in miniaturization and performance in advanced packaging technolo-gy,the diameter of Sn-based microbumps continues to shrink to the micrometer scale.Consequently,the current density passing through each solder bump increases exponentially as the radius reduces.This emphasizes the critical need to understand the behaviors and mechanisms of electromigration(EM)for the reliability evaluation and design of chip interconnects in integrated circuits.This study systematically summarizes and analyzes the physical nature,key influencing factors and research methods related to the electromigration of Sn-based microbumps.The EM characteristics during the solid-solid EM,including the polarity effect,reverse polarity effect and two-phase separation are reviewed.Similarly,the EM behav-iors during the liquid-solid EM,including atomic migration,phase segregation,and phase dissolution,are systematically reviewed.The EM lifetime assessment models and their modifications are evaluated.Furthermore,this study summarizes methods to improve the EM reliability of Sn-based microbumps and outlines prospective research directions and analytical approaches to further improve their reliability in advanced electronic applications.
作者
黄明亮
王胜博
尤海潮
刘厚麟
任婧
黄斐斐
HUANG Mingiang;WANG Shengbo;YOU Haichao;LIU Houlin;REN Jing;HUANG Feifei(Electronic Packaging Materials Laboratory,School of Materials Science and Engineering,Dalian University of Technology,Dalian 116024,China)
出处
《金属学报》
北大核心
2025年第7期979-997,共19页
Acta Metallurgica Sinica
基金
国家自然科学基金项目Nos.52350321和U1837208
中国博士后科学基金项目No.2024M750313。
关键词
电子封装
芯片互连
锡基微凸点
电迁移
可靠性
electronic packaging
chip interconnection
Sn-based microbump
electromigration
reli-ability
