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Laser-induced in situ reprogramming of magnetic shape memory composites for adaptive devices
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作者 Qianqian Zhang Rui Li +5 位作者 Yuan Tao Yiyu Chen Yanlei Hu Dong Wu Jiaru Chu Jiawen Li 《International Journal of Extreme Manufacturing》 2026年第1期767-779,共13页
Programmable/reprogrammable magneto-responsive composites(MRCs)are highly desirable for applications in soft robotics,morphable actuators,and biomedical devices due to their capabilities of undergoing reversible,compl... Programmable/reprogrammable magneto-responsive composites(MRCs)are highly desirable for applications in soft robotics,morphable actuators,and biomedical devices due to their capabilities of undergoing reversible,complex,untethered,and rapid deformations.However,current MRC-based devices primarily rely on soft matrices,which revert to their original shapes and cease functioning when external magnetic fields are removed.Moreover,their magnetization programming,deformations,and functioning need to alternate between encoding and actuation platforms,limiting the adaptability and efficiency.Here,we present a reprogrammable magnetic shape-memory composite(RM-SMC)integrating a shape-memory polymer(SMP)skeleton with phase-transition magnetic microcapsules.High-intensity laser melts microcapsules for magnetic realignment under programmed fields,while low-intensity laser softens SMP for structural reconfiguration without compromising integrity.This dual-laser strategy facilitates in situ magnetization programming,shape morphing,and function execution within a single material system.Our innovative approach enables unique applications,including omnidirectional multi-degree-of-freedom actuators that can activate light switches,solar trackers that optimize energy capture,and adaptive impellers that modulate fluid pumping.By eliminating platform alternation and enabling shape/function retention post-actuation,the RM-SMC platform overcomes critical limitations in conventional MRCs,establishing a paradigm for multifunctional devices requiring persistent configuration control and field-independent operation. 展开更多
关键词 magneto-responsive composites shape memory polymer in situ programming and deformation omnidirectional multi-degree of freedom actuator adjustable fluid pumping
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Effects of repetitive transcranial magnetic stimulation on electroencephalogram and memory function in patients with mild cognitive impairment 被引量:1
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作者 Hai-Xia Fu 《World Journal of Psychiatry》 2025年第7期167-175,共9页
BACKGROUND Mild cognitive impairment(MCI)is a high-risk precursor to Alzheimer’s disease characterized by declining memory or other progressive cognitive functions without compromising daily living abilities.AIM To i... BACKGROUND Mild cognitive impairment(MCI)is a high-risk precursor to Alzheimer’s disease characterized by declining memory or other progressive cognitive functions without compromising daily living abilities.AIM To investigate the efficacy of repetitive transcranial magnetic stimulation(rTMS)in patients with MCI.METHODS This retrospective analysis involved 180 patients with MCI who were admitted to The First Hospital of Shanxi Medical University from January 2021 to June 2023.Participants were allocated into the research(n=98,receiving rTMS)and control groups(n=82,receiving sham stimulation).Memory tests,cognitive function assessments,event-related potential–P300 tests,and electroencephalogram(EEG)examinations were conducted pre-treatment and post-treatment.Further,memory quotient(MQ),cognitive function scores,and EEG grading results were compared,along with adverse reaction incidences.RESULTS Pre-treatment MQ scores,long-term and short-term memory,as well as immediate memory scores,demonstrated no notable differences between the groups.Post-treatment,the research group exhibited significant increases in MQ scores,long-term memory,and short-term memory compared to baseline(P<0.05),with these improvements being statistically superior to those in the control group.However,immediate memory scores exhibited no significant change(P>0.05).Further,the research group demonstrated statistically better post-treatment scores on the Revised Wechsler Memory Scale than the control group.Furthermore,post-treatment P300 latency and amplitude improved significantly in the research group,surpassing the control group.EEG grading in the research group improved,and the incidence of adverse reactions was significantly lower than in the control group.CONCLUSION Patients with MCI receiving rTMS therapy demonstrated improved memory and cognitive functions and EEG grading and exhibited high safety with fewer adverse reactions. 展开更多
关键词 Repetitive transcranial magnetic stimulation Mild cognitive impairment patients ELECTROENCEPHALOGram memory function Cognitive function
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Enhanced memory window and efficient resistive switching in stabilized BaTiO_(3)-based RRAM through incorporation of Al_(2)O_(3) interlayer 被引量:1
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作者 Akendra Singh Chabungbam Minjae Kim +2 位作者 Atul Thakre Dong-eun Kim Hyung-Ho Park 《Journal of Materials Science & Technology》 2025年第10期125-134,共10页
As artificial intelligence and big data become increasingly prevalent, resistive random-access memory (RRAM) has become one of the most promising alternatives for storing massive amounts of data. In this study, we emp... As artificial intelligence and big data become increasingly prevalent, resistive random-access memory (RRAM) has become one of the most promising alternatives for storing massive amounts of data. In this study, we employed high-quality crystalline TiN/Al_(2)O_(3)/BaTiO_(3)/Pt RRAM with an optimized thin Al_(2)O_(3) interlayer around 12 nm thick prepared using atomic layer deposition since the thickness of the interlayer affects the memory window size. After insertion of the Al_(2)O_(3) interlayer, the novel RRAM exhibited outstanding uniform resistive switching voltage and the ON/OFF memory window drastically increased from 10 to 103 without any discernible decline in performance. Moreover, the low-resistance state and high-resistance state operating current values decreased by almost one order and three orders of magnitude, respectively, thereby decreasing the power consumption for the RESET and SET processes by more than three and almost one order of magnitude, respectively. The device also exhibits multilevel resistive switching behavior when varying the applied voltage. Finally, we also developed a 6 6 crossbar array which demonstrated consistent and reliable resistive switching behavior with minimal variation. Hence, our approach holds great promise for producing state-of-the-art non-volatile resistive switching devices. 展开更多
关键词 Resistive random-access memory Resistive switching Atomic layer deposition Al_(2)O_(3)interlayer
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Phase Field Simulation of Fracture Behavior in Shape Memory Alloys and Shape Memory Ceramics:A Review
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作者 Junhui Hua Junyuan Xiong +2 位作者 Bo Xu Chong Wang Qingyuan Wang 《Computers, Materials & Continua》 2025年第10期65-88,共24页
Shape memory alloys(SMAs)and shape memory ceramics(SMCs)exhibit high recovery ability due to the martensitic transformation,which complicates the fracture mechanism of SMAs and SMCs.The phase field method,as a powerfu... Shape memory alloys(SMAs)and shape memory ceramics(SMCs)exhibit high recovery ability due to the martensitic transformation,which complicates the fracture mechanism of SMAs and SMCs.The phase field method,as a powerful numerical simulation tool,can efficiently resolve the microstructural evolution,multi-field coupling effects,and fracture behavior of SMAs and SMCs.This review begins by presenting the fundamental theoretical framework of the fracture phase field method as applied to SMAs and SMCs,covering key aspects such as the phase field modeling of martensitic transformation and brittle fracture.Subsequently,it systematically examines the phase field simulations of fracture behaviors in SMAs and SMCs,with particular emphasis on how crystallographic orientation,grain size,and grain boundary properties influence the crack propagation.Additionally,the interplay between martensite transformation and fracture mechanisms is analyzed to provide deeper insights into the material responses under mechanical loading.Finally,the review explores future prospects and emerging trends in phase field simulations of SMA and SMC fracture behavior,along with potential advancements in the fracture phase field method itself,including multi-physics coupling and enhanced computational efficiency for large-scale simulations. 展开更多
关键词 Phase field fracture behavior shape memory alloy shape memory ceramic
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The Astrocyte:A New Component of The Engram Regulates Memory Recall
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作者 Ru Li Zilan Luo +2 位作者 Ding Zhong Xia Deng Liang Gao 《Neuroscience Bulletin》 2025年第7期1314-1316,共3页
At the beginning of the 20^(th)century,German scientist Richard Semon introduced the term'engram'to describe the neural substrate implicated in the processes of memory formation and retrieval[1].The trace of t... At the beginning of the 20^(th)century,German scientist Richard Semon introduced the term'engram'to describe the neural substrate implicated in the processes of memory formation and retrieval[1].The trace of the corresponding biophysical and biochemical changes in the brain responding to an external stimulus is called an engram,and understanding the physical manifestations of memory formation and recall remains a fundamental yet unresolved question[2]. 展开更多
关键词 understanding physical manifestations memory formation memory recall biophysical biochemical changes engram neural substrate ASTROCYTE
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Body Temperature Programmable Shape Memory Thermoplastic Rubber
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作者 Taoxi Wang Zhuo Liu +5 位作者 Fu Jian Xing Shen Chen Wang Huwei Bian Tao Jiang Wei Min Huang 《Journal of Polymer Materials》 2025年第1期81-94,共14页
This paper presents the development of a thermoplastic shape memory rubber that can be programmed at human body temperature for comfortable fitting applications.We hybridized commercially available thermoplastic rubbe... This paper presents the development of a thermoplastic shape memory rubber that can be programmed at human body temperature for comfortable fitting applications.We hybridized commercially available thermoplastic rubber(TPR)used in the footwear industry with un-crosslinked polycaprolactone(PCL)to create two samples,namely TP6040 and TP7030.The shape memory behavior,elasticity,and thermo-mechanical response of these rubbers were systematically investigated.The experimental results demonstrated outstanding shape memory performance,with both samples achieving shape fixity ratios(Rf)and shape recovery ratios(R_(r))exceeding 94%.TP6040 exhibited a fitting time of 80 s at body temperature(37℃),indicating a rapid response for shape fixing.The materials also showed good elasticity before and after programming,which is crucial for comfort fitting.These findings suggest that the developed shape memory thermoplastic rubber has potential applications in personalized comfort fitting products,offering advantages over traditional customization techniques in terms of efficiency and cost-effectiveness. 展开更多
关键词 Thermoplastic rubber POLYCAPROLACTONE shape memory polymers body temperature programmable comfort fitting
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A 28 nm 576K RRAM-based computing-in-memory macro featuring hybrid programming with area efficiency of 2.82 TOPS/mm^(2)
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作者 Siqi Liu Songtao Wei +7 位作者 Peng Yao Dong Wu Lu Jie Sining Pan Jianshi Tang Bin Gao He Qian Huaqiang Wu 《Journal of Semiconductors》 2025年第6期112-119,共8页
Computing-in-memory(CIM)has been a promising candidate for artificial-intelligent applications thanks to the absence of data transfer between computation and storage blocks.Resistive random access memory(RRAM)based CI... Computing-in-memory(CIM)has been a promising candidate for artificial-intelligent applications thanks to the absence of data transfer between computation and storage blocks.Resistive random access memory(RRAM)based CIM has the advantage of high computing density,non-volatility as well as high energy efficiency.However,previous CIM research has predominantly focused on realizing high energy efficiency and high area efficiency for inference,while little attention has been devoted to addressing the challenges of on-chip programming speed,power consumption,and accuracy.In this paper,a fabri-cated 28 nm 576K RRAM-based CIM macro featuring optimized on-chip programming schemes is proposed to address the issues mentioned above.Different strategies of mapping weights to RRAM arrays are compared,and a novel direct-current ADC design is designed for both programming and inference stages.Utilizing the optimized hybrid programming scheme,4.67×programming speed,0.15×power saving and 4.31×compact weight distribution are realized.Besides,this macro achieves a normalized area efficiency of 2.82 TOPS/mm2 and a normalized energy efficiency of 35.6 TOPS/W. 展开更多
关键词 computing-in-memory on-chip programming scheme hybrid programming resistive random access memory matrix-vector-multiplication acceleration
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Shape Memory Properties of Short-Glass Fiber Reinforced Epoxy Composite Programmed below Glass Transition Temperature
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作者 Kartikey Shahi Velmurugan Ramachandran +1 位作者 Ranjith Mohan Boomurugan Ramachandran 《Journal of Polymer Materials》 2025年第2期477-496,共20页
A Shape Memory Polymer Composite(SMPC)is developed by reinforcing an epoxy-based polymer with randomly oriented short glass fibers.Diverging from previous research,which primarily focused on the hot programming of sho... A Shape Memory Polymer Composite(SMPC)is developed by reinforcing an epoxy-based polymer with randomly oriented short glass fibers.Diverging from previous research,which primarily focused on the hot programming of short glass fiber-based SMPCs,this work explores the potential for programming below the glass transition temperature(Tg)for epoxy-based SMPCs.To mitigate the inherent brittleness of the SMPC during deformation,a linear polymer is incorporated,and a temperature between room temperature and Tg is chosen as the deformation temperature to study the shape memory properties.The findings demonstrate an enhancement in shape fixity and recovery stress,alongside a reduction in shape recovery,with the incorporation of short glass fibers.In addition to tensile properties,thermal properties such as thermal conductivity,specific heat capacity,and glass transition temperature are investigated for their dependence on fiber content.Microscopic properties,such as fiber-matrix adhesion and the dispersion of glass fibers,are examined through Scanning Electron Microscope imaging.The fiber length distribution and mean fiber lengths are also measured for different fiber fractions. 展开更多
关键词 Shape memory polymer composite glass fiber composite shape fixity shape recovery thermomechanical cycle
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基于RAMS-FTA-LCC的车辆轴箱弹簧可靠性分析
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作者 廖林林 邦小华 +1 位作者 邓春林 周凌昊 《客车技术与研究》 2026年第2期44-48,共5页
本文针对地铁B型车辆轴箱弹簧的可靠性问题,以某线路12列车1152个弹簧为研究对象,以FC1级芯轴断裂失效率不超过0.0001 FPKM为目标,提出一种集成RAMS、故障树分析(FTA)与全生命周期成本(LCC)的系统分析方法。通过建立RAMS指标模型,识别出... 本文针对地铁B型车辆轴箱弹簧的可靠性问题,以某线路12列车1152个弹簧为研究对象,以FC1级芯轴断裂失效率不超过0.0001 FPKM为目标,提出一种集成RAMS、故障树分析(FTA)与全生命周期成本(LCC)的系统分析方法。通过建立RAMS指标模型,识别出8个最小割集,确定芯轴设计缺陷及高刚度材料缺陷为高风险因素;LCC分析表明,橡胶部件是主导失效部件,其分配失效率达0.00689 FPKM。芯轴的材料与结构缺陷是导致其失效的关键因素,据此提出基于蠕变量的状态维护策略,在保证可靠性的同时降低维护成本。该方法实现了安全性与经济性的协同优化,适用于轨道交通关键部件及其他复杂工程系统的可靠性设计与成本管控。 展开更多
关键词 ramS FTA LCC 地铁车辆 轴箱弹簧 可靠性分析
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Toggle MRAM电离总剂量与瞬态电离辐射效应研究
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作者 熊涔 杜川华 +2 位作者 陈泉佑 李何依 赵洪超 《核技术》 北大核心 2026年第3期98-104,共7页
设计了一套存储器辐射效应远程在线测试系统,对一款磁阻随机存取存储器(Magnetoresistive Random Access Memory,MRAM)在不同工作模式下开展了电离总剂量和瞬态电离辐射效应实验研究,获得了以下研究结果:1)电离总剂量辐照实验中,在动态... 设计了一套存储器辐射效应远程在线测试系统,对一款磁阻随机存取存储器(Magnetoresistive Random Access Memory,MRAM)在不同工作模式下开展了电离总剂量和瞬态电离辐射效应实验研究,获得了以下研究结果:1)电离总剂量辐照实验中,在动态读写模式下,首先出现的效应为电源电流显著增加,器件在30 krad(Si)时,出现了读数据错误;2)瞬态电离辐射辐照实验中,MRAM在静态加电模式和动态读数据模式未观测到数据或功能错误,但在动态写数据模式下出现数据写入失败的现象。初步分析认为写数据失败的原因可能是γ射线引起的PN结光电流形成电路全局光电流,造成MRAM电源波动,触发MRAM写保护有效。本文研究结果表明在总剂量与瞬态电离辐射环境下,MRAM会出现功能异常。MRAM的外围电路是其抗辐射性能的敏感薄弱环节。 展开更多
关键词 磁阻随机存取存储器 电离总剂量 瞬态电离辐射 光电流
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Lifespan Estimates of Solutions to the Tricomi Equation with Memory Terms
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作者 YANG Jie YAO Jiangyan 《应用数学》 北大核心 2026年第2期605-623,共19页
The main purpose of this paper is to investigate the singularities of solutions to the single Tricomi equation with derivative term and combined memory term.In addition,the blow-up of the solution to the weakly couple... The main purpose of this paper is to investigate the singularities of solutions to the single Tricomi equation with derivative term and combined memory term.In addition,the blow-up of the solution to the weakly coupled system with memory term is also considered,where one is a power nonlinear term and the other is a derivative nonlinear term.Upper bound lifespan estimates of solution are obtained in the sub-critical by utilizing the test function method and iteration technique.The innovation of this paper focuses on the lifespan estimates of the solutions,which extends the well-known Strauss and Glassey conjectures. 展开更多
关键词 Tricomi equation memory term Semilinear weakly coupled system Test function method Iteration method
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RRAM存算一体芯片的三维异构集成技术研究进展
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作者 杨道虹 马国坤 +2 位作者 程乾 刘淑娟 王浩 《中国集成电路》 2026年第3期17-24,共8页
全球算力需求的爆炸式增长与冯·诺依曼架构瓶颈的制约,使传统计算架构面临严峻挑战,存算一体技术成为解决困境的重要路径之一。在众多存算一体技术路线中,基于RRAM新型存算技术以高能效与高集成度等优势脱颖而出,并在小规模阵列和... 全球算力需求的爆炸式增长与冯·诺依曼架构瓶颈的制约,使传统计算架构面临严峻挑战,存算一体技术成为解决困境的重要路径之一。在众多存算一体技术路线中,基于RRAM新型存算技术以高能效与高集成度等优势脱颖而出,并在小规模阵列和原型芯片方面取得重要进展。然而,受限于传统集成技术,阻变随机存储器(RRAM)芯片在集成密度方面难以满足未来更高算力需求下的高能效与实时性应用场景。三维异构集成技术通过垂直互连与分层整合方式,有望突破平面集成密度瓶颈,推动超高密度RRAM存算一体芯片的发展。本文围绕基于三维异构集成技术的RRAM存算一体芯片研究进展,重点介绍了硅通孔(TSV)和单片三维(M3D)集成两种主流技术路线,分析了集成工艺和系统级兼容性等关键问题,讨论了面临的挑战与未来发展方向。本文为高密度三维异构RRAM存算一体技术的研究与应用提供了新思路。 展开更多
关键词 存算一体芯片 阻变存储器 异构集成 硅通孔 单片三维集成
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The multilayered identity of B cell memory
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作者 Vassilis Glaros Nimmy Francis Taras Kreslavsky 《Cellular & Molecular Immunology》 2026年第2期150-167,共18页
The distinctive feature of the adaptive immune system is its ability to generate immunological memory that can provide defense against subsequent infections.In the case of antibody-mediated immune responses,this memor... The distinctive feature of the adaptive immune system is its ability to generate immunological memory that can provide defense against subsequent infections.In the case of antibody-mediated immune responses,this memory comes in two cellular forms:plasma cells(PCs)and memory B cells(MBCs).PCs protect against reinfection by constitutively producing antibodies.The presence of a diverse pool of MBCs,which can expand and differentiate into PCs in secondary immune responses,is thought to be particularly important for defense against new pathogen variants.Recent studies have shown that the MBC compartment is far more heterogeneous than previously anticipated.This heterogeneity,among other factors,is shaped by their developmental pathway(germinal center(GC)vs non-GC-derived MBCs),the duration and strength of antigenic stimulation,anatomical and microanatomical localization,and the timing of generation in ontogeny.Combinations of these“layers”of MBC identities can define MBCs’properties and their fate in recall responses.Here,we review the mechanisms underlying MBC differentiation,maintenance,and reactivation and explore how the layered identity of MBCs contributes to the functions of these cells. 展开更多
关键词 B cell memory Humoral immune response Tissue-resident memory B cells
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Role of 5-hydroxytryptamine type 3 receptors in aerobic exercise-induced improvement of memory and hippocampal synaptic plasticity
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作者 Xiaoqian He Ziying Lai +6 位作者 Xueyan Wang Jingjing Li Guangbing Duan Junwen Wang Zhao Qin Shuchang Xu Ying Huang 《Neural Regeneration Research》 2026年第8期3641-3649,共9页
Aerobic exercise facilitates synaptic plasticity,thereby improving cognitive functions such as learning and memory.The 5-hydroxytryptamine system has been indicated in these processes.5-Hydroxytryptamine type 3 recept... Aerobic exercise facilitates synaptic plasticity,thereby improving cognitive functions such as learning and memory.The 5-hydroxytryptamine system has been indicated in these processes.5-Hydroxytryptamine type 3 receptors are necessary for exercise-induced hippocampal neurogenesis.Some antipsychotic drugs with 5-hydroxytryptamine type 3 receptor antagonistic properties may impede the amelioration of cognitive impairment and hippocampal plasticity induced by exercise.However,the mechanisms underlying the facilitation of synaptic plasticity by aerobic exercise have not yet been elucidated.In this study,we found that 5-hydroxytryptamine type 3 receptors played an important role in aerobic exercise-mediated improvement of hippocampal-dependent spatial and exploratory memory in mice.While 5-hydroxytryptamine type 3 receptors did not affect baseline neurogenesis in the hippocampal dentate gyrus,5-hydroxytryptamine type 3 receptors were required for aerobic exercise-induced neurogenesis and astrocyte proliferation in this region.In addition,5-hydroxytryptamine type 3 receptors were crucial for maintaining long-term potentiation in the CA1,dentate gyrus,and CA3 regions of the hippocampus.The long-term potentiation changes induced by aerobic exercise in sub-regions of the hippocampus were heterogeneous:5-hydroxytryptamine type 3 receptors were essential for aerobic exercise to enhance long-term potentiation in the CA3,but not the CA1 or dentate gyrus,regions of the hippocampus.Furthermore,aerobic exercise up-regulated 5-hydroxytryptamine type 3 receptor expression and increased brain-derived neurotrophic factor release in the hippocampus in a 5-hydroxytryptamine type 3 receptor-dependent manner.These results suggest that aerobic exercise increases hippocampal dentate gyrus neurogenesis and astrocyte proliferation via the up-regulation of 5-hydroxytryptamine type 3 receptors,leading to more brain-derived neurotrophic factor production and release from these cells,which results in long-term potentiation facilitation in the hippocampal CA3 region and help improve memory.Our findings provide insight into the mechanisms by which physical activity enhances memory and may have implications for improving memory through modulating 5-hydroxytryptamine type 3 receptor. 展开更多
关键词 5-HYDROXYTRYPTAMINE 5-hydroxytryptamine type 3 receptor aerobic exercise brain-derived neurotrophic factor exploratory memory hippocampus long-term potentiation NEUROGENESIS neuroglia proliferation spatial memory
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A shape-memory hydrogen-bonded organic framework for flue gas desulfurization
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作者 Wenlei Yang Lingyao Wang Yuanbin Zhang 《Chinese Journal of Structural Chemistry》 2025年第6期8-10,共3页
With the acceleration of industrialization,the pollution problem of sulfur dioxide(SO_(2))emitted from coal-fired power plants has become increasingly severe.Although wet flue gas desulfurization(FGD)technology can re... With the acceleration of industrialization,the pollution problem of sulfur dioxide(SO_(2))emitted from coal-fired power plants has become increasingly severe.Although wet flue gas desulfurization(FGD)technology can remove about 95%of SO_(2),its high energy consumption and the corrosion risk of downstream equipment caused by residual SO_(2)(500–3000 ppm)still need to be addressed[1].Previous porous materials(such as MOFs)achieve selective adsorption of SO_(2) through open metal sites,M–OH sites or functional organic groups,but the problem of CO_(2) co-adsorption limits their practical application[2].In recent years,hydrogen-bonded organic frameworks(HOFs)have emerged as a research hotspot due to their reversible hydrogen-bonding networks and flexible structures[3],but their stability under extreme conditions and efficient separation performance still need to be improved[4]. 展开更多
关键词 shape memory open metal sitesm oh sites downstream equipment sulfur dioxide emitted hydrogen bonded organic frameworks sulfur dioxide flue gas desulfurization wet flue gas desulfurization fgd technology
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Lignin-derived High-performance Near-infrared Light-responsive Shape Memory Polyurethanes for Biomedical Applications
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作者 Su-Yang Dai Jia-Yue Li +5 位作者 Ling-Chen Mao Dan-Hua Zhou Yu Zhang Zhi-Hua Gana Zhen-Bo Ning Yun-Feng Lu 《Chinese Journal of Polymer Science》 2026年第4期1090-1101,I0016,共13页
Near-infrared(NIR)light-responsive shape memory polymers(SMPs)show great promise for biomedical applications,but conventional photothermal agents suffer from high cost,complex preparation,or poor biocompatibility,whil... Near-infrared(NIR)light-responsive shape memory polymers(SMPs)show great promise for biomedical applications,but conventional photothermal agents suffer from high cost,complex preparation,or poor biocompatibility,while lignin-based alternatives exhibit insufficient photothermal conversion efficiency.Herein,we developed a novel strategy to enhance photothermal performance of lignin through sequential demethylation modification and Fe^(3+)complexation for constructing NIR light responsive SMPs.Dealkaline lignin(DL)was first demethylated using iodocyclohexane to produce demethylated lignin(DDL)with increased catechol content,which was then incorporated into polycaprolactone-based polyurethane synthesis followed by Fe^(3+)complexation.Results showed that DDL-Fe^(3+)complexes have significantly enhanced photothermal conversion performance,and the resulting PU-DDL+Fe^(3+)polyurethane with 0.5 wt%DDL content demonstrated a temperature increases of 39.8℃under 0.33 W·cm-2808 nm NIR irradiation.This excellent photothermal performance enables the shape-fixed PU-DDL+Fe^(3+)polyurethane to rapidly recover to its initial shape under NIR light irradiation.Additionally,PU-DDL+Fe^(3+)polyurethane exhibits good mechanical properties and biocompatibility,demonstrating significant biomedical application potential. 展开更多
关键词 LIGNIN POLYURETHANE Shape memory polymers NIR light responsive POLYCAPROLACTONE
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Uniform Attractors for the Kirchhoff Type Suspension Bridge Equation with Nonlinear Damping and Memory Term
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作者 Ling XU Yanni WANG 《Journal of Mathematical Research with Applications》 2026年第1期71-86,共16页
The goal of this paper is to investigate the long-time dynamics of solutions to a Kirchhoff type suspension bridge equation with nonlinear damping and memory term.For this problem we establish the well-posedness and e... The goal of this paper is to investigate the long-time dynamics of solutions to a Kirchhoff type suspension bridge equation with nonlinear damping and memory term.For this problem we establish the well-posedness and existence of uniform attractor under some suitable assumptions on the nonlinear term g(u),the nonlinear damping f(u_(t))and the external force h(x,t).Specifically,the asymptotic compactness of the semigroup is verified by the energy reconstruction method. 展开更多
关键词 uniform attractor Kirchhoff type suspension bridge equation nonlinear damping memory term
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Restoration of Extrasynaptic/Synaptic GABA_(A)R-α5 Localization Improves Sevoflurane-Induced Early Memory Impairment in Aged Mice
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作者 Mengxue Zhang Xiaokun Wang +5 位作者 Zhun Wang Jinpeng Dong Sixuan Wang Ying Dong Changyu Jiang Yiqing Yin 《Neuroscience Bulletin》 2026年第2期301-318,共18页
GABA_(A) receptors containingα5-subunits(GABA_(A)R-α5)cluster at both extrasynaptic and synaptic locations,interacting with the scaffold proteins radixin and gephyrin,respectively,and the re-localization of GABA_(A... GABA_(A) receptors containingα5-subunits(GABA_(A)R-α5)cluster at both extrasynaptic and synaptic locations,interacting with the scaffold proteins radixin and gephyrin,respectively,and the re-localization of GABA_(A)R-α5 influences GABAergic transmission.Here,we found that when early spatial memory deficits occurred in aged mice at 24 h after sevoflurane anesthesia,there was a re-localization of GABA_(A)R-α5 that enhanced tonic inhibition and reduced the decay kinetics of miniature inhibitory postsynaptic currents in the hippocampal CA1 region.Mechanistically,increased phosphorylation of radixin at threonine 564(Thr564)mediates the re-localization of GABA_(A)R-α5.Acute treatment with the selective extrasynaptic GABA_(A)R-α5 antagonist S44819 restored the GABA_(A)R-α5-mediated inhibitory currents by reversing radixin phosphorylation-dependent GABA_(A)R-α5 re-localization,then improved the sevoflurane-induced spatial memory impairment in aged mice.Our results suggest that the localization of GABA_(A)R-α5 altered by sevoflurane is linked to unbalanced GABAergic transmission,which induces early memory impairment in aged mice.Modulating the GABA_(A)R-α5 localization might be a novel strategy to improve memory after sevoflurane exposure. 展开更多
关键词 Aging SEVOFLURANE memory GABA_(A)R-α5 HIPPOCAMPUS
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温度对14nm FinFET SRAM单粒子效应的影响
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作者 谭钧元 郭刚 +4 位作者 张付强 江宜蓓 陈启明 韩金华 秦丰迪 《半导体技术》 北大核心 2026年第1期87-93,共7页
由于鳍式场效应晶体管静态随机存储器(FinFET SRAM)特有的鳍片电荷共享机制,其对单粒子效应(SEE)呈现出与传统平面器件截然不同的敏感特性。利用TCAD仿真构建14 nm FinFET SRAM模型并结合重离子实验加以验证,研究了温度对14 nm FinFET S... 由于鳍式场效应晶体管静态随机存储器(FinFET SRAM)特有的鳍片电荷共享机制,其对单粒子效应(SEE)呈现出与传统平面器件截然不同的敏感特性。利用TCAD仿真构建14 nm FinFET SRAM模型并结合重离子实验加以验证,研究了温度对14 nm FinFET SRAM电荷收集机制的影响。结果表明,随着温度的升高,高线性能量转移(LET)离子诱导的电荷收集过程逐渐减弱,多节点电荷收集现象也会逐渐减弱,且当环境温度达到125℃临界值时,敏感节点会出现收集电荷的雪崩式累积现象。此外,随着温度的升高,器件的翻转截面从1.27×10^(-3)cm^(2)增大到1.81×10^(-3)cm^(2),增大了约43%,且在高温下翻转截面的增大趋势愈发显著,该结果与仿真结果良好吻合。 展开更多
关键词 鳍式场效应晶体管静态随机存储器(FinFET Sram) 单粒子效应(SEE) 电荷收集 TCAD 温度
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Oxide Semiconductor for Advanced Memory Architectures:Atomic Layer Deposition,Key Requirement and Challenges
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作者 Chi‑Hoon Lee Seong‑Hwan Ryu +3 位作者 Taewon Hwang Sang‑Hyun Kim Yoon‑Seo Kim Jin‑Seong Park 《Nano-Micro Letters》 2026年第6期80-124,共45页
Oxide semiconductors(OSs),introduced by the Hosono group in the early 2000s,have evolved from display backplane materials to promising candidates for advanced memory and logic devices.The exceptionally low leakage cur... Oxide semiconductors(OSs),introduced by the Hosono group in the early 2000s,have evolved from display backplane materials to promising candidates for advanced memory and logic devices.The exceptionally low leakage current of OSs and compatibility with three-dimensional(3D)architectures have recently sparked renewed interest in their use in semiconductor applications.This review begins by exploring the unique material properties of OSs,which fundamentally originate from their distinct electronic band structure.Subsequently,we focus on atomic layer deposition(ALD),a core technique for growing excellent OS films,covering both basic and advanced processes compatible with 3D scaling.The basic surface reaction mechanisms—adsorption and reaction—and their roles in film growth are introduced.Furthermore,material design strategies,such as cation selection,crystallinity control,anion doping,and heterostructure engineering,are discussed.We also highlight challenges in memory applications,including contact resistance,hydrogen instability,and lack of p-type materials,and discuss the feasibility of ALD-grown OSs as potential solutions.Lastly,we provide an outlook on the role of ALD-grown OSs in memory technologies.This review bridges material fundamentals and device-level requirements,offering a comprehensive perspective on the potential of ALD-driven OSs for next-generation semiconductor memory devices. 展开更多
关键词 Oxide semiconductor(OS) Atomic layer deposition(ALD) memory applications
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