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Phase Field Simulation of Fracture Behavior in Shape Memory Alloys and Shape Memory Ceramics:A Review
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作者 Junhui Hua Junyuan Xiong +2 位作者 Bo Xu Chong Wang Qingyuan Wang 《Computers, Materials & Continua》 2025年第10期65-88,共24页
Shape memory alloys(SMAs)and shape memory ceramics(SMCs)exhibit high recovery ability due to the martensitic transformation,which complicates the fracture mechanism of SMAs and SMCs.The phase field method,as a powerfu... Shape memory alloys(SMAs)and shape memory ceramics(SMCs)exhibit high recovery ability due to the martensitic transformation,which complicates the fracture mechanism of SMAs and SMCs.The phase field method,as a powerful numerical simulation tool,can efficiently resolve the microstructural evolution,multi-field coupling effects,and fracture behavior of SMAs and SMCs.This review begins by presenting the fundamental theoretical framework of the fracture phase field method as applied to SMAs and SMCs,covering key aspects such as the phase field modeling of martensitic transformation and brittle fracture.Subsequently,it systematically examines the phase field simulations of fracture behaviors in SMAs and SMCs,with particular emphasis on how crystallographic orientation,grain size,and grain boundary properties influence the crack propagation.Additionally,the interplay between martensite transformation and fracture mechanisms is analyzed to provide deeper insights into the material responses under mechanical loading.Finally,the review explores future prospects and emerging trends in phase field simulations of SMA and SMC fracture behavior,along with potential advancements in the fracture phase field method itself,including multi-physics coupling and enhanced computational efficiency for large-scale simulations. 展开更多
关键词 Phase field fracture behavior shape memory alloy shape memory ceramic
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The Astrocyte:A New Component of The Engram Regulates Memory Recall
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作者 Ru Li Zilan Luo +2 位作者 Ding Zhong Xia Deng Liang Gao 《Neuroscience Bulletin》 2025年第7期1314-1316,共3页
At the beginning of the 20^(th)century,German scientist Richard Semon introduced the term'engram'to describe the neural substrate implicated in the processes of memory formation and retrieval[1].The trace of t... At the beginning of the 20^(th)century,German scientist Richard Semon introduced the term'engram'to describe the neural substrate implicated in the processes of memory formation and retrieval[1].The trace of the corresponding biophysical and biochemical changes in the brain responding to an external stimulus is called an engram,and understanding the physical manifestations of memory formation and recall remains a fundamental yet unresolved question[2]. 展开更多
关键词 understanding physical manifestations memory formation memory recall biophysical biochemical changes engram neural substrate ASTROCYTE
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Body Temperature Programmable Shape Memory Thermoplastic Rubber
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作者 Taoxi Wang Zhuo Liu +5 位作者 Fu Jian Xing Shen Chen Wang Huwei Bian Tao Jiang Wei Min Huang 《Journal of Polymer Materials》 2025年第1期81-94,共14页
This paper presents the development of a thermoplastic shape memory rubber that can be programmed at human body temperature for comfortable fitting applications.We hybridized commercially available thermoplastic rubbe... This paper presents the development of a thermoplastic shape memory rubber that can be programmed at human body temperature for comfortable fitting applications.We hybridized commercially available thermoplastic rubber(TPR)used in the footwear industry with un-crosslinked polycaprolactone(PCL)to create two samples,namely TP6040 and TP7030.The shape memory behavior,elasticity,and thermo-mechanical response of these rubbers were systematically investigated.The experimental results demonstrated outstanding shape memory performance,with both samples achieving shape fixity ratios(Rf)and shape recovery ratios(R_(r))exceeding 94%.TP6040 exhibited a fitting time of 80 s at body temperature(37℃),indicating a rapid response for shape fixing.The materials also showed good elasticity before and after programming,which is crucial for comfort fitting.These findings suggest that the developed shape memory thermoplastic rubber has potential applications in personalized comfort fitting products,offering advantages over traditional customization techniques in terms of efficiency and cost-effectiveness. 展开更多
关键词 Thermoplastic rubber POLYCAPROLACTONE shape memory polymers body temperature programmable comfort fitting
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A 28 nm 576K RRAM-based computing-in-memory macro featuring hybrid programming with area efficiency of 2.82 TOPS/mm^(2)
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作者 Siqi Liu Songtao Wei +7 位作者 Peng Yao Dong Wu Lu Jie Sining Pan Jianshi Tang Bin Gao He Qian Huaqiang Wu 《Journal of Semiconductors》 2025年第6期112-119,共8页
Computing-in-memory(CIM)has been a promising candidate for artificial-intelligent applications thanks to the absence of data transfer between computation and storage blocks.Resistive random access memory(RRAM)based CI... Computing-in-memory(CIM)has been a promising candidate for artificial-intelligent applications thanks to the absence of data transfer between computation and storage blocks.Resistive random access memory(RRAM)based CIM has the advantage of high computing density,non-volatility as well as high energy efficiency.However,previous CIM research has predominantly focused on realizing high energy efficiency and high area efficiency for inference,while little attention has been devoted to addressing the challenges of on-chip programming speed,power consumption,and accuracy.In this paper,a fabri-cated 28 nm 576K RRAM-based CIM macro featuring optimized on-chip programming schemes is proposed to address the issues mentioned above.Different strategies of mapping weights to RRAM arrays are compared,and a novel direct-current ADC design is designed for both programming and inference stages.Utilizing the optimized hybrid programming scheme,4.67×programming speed,0.15×power saving and 4.31×compact weight distribution are realized.Besides,this macro achieves a normalized area efficiency of 2.82 TOPS/mm2 and a normalized energy efficiency of 35.6 TOPS/W. 展开更多
关键词 computing-in-memory on-chip programming scheme hybrid programming resistive random access memory matrix-vector-multiplication acceleration
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Effects of repetitive transcranial magnetic stimulation on electroencephalogram and memory function in patients with mild cognitive impairment
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作者 Hai-Xia Fu 《World Journal of Psychiatry》 2025年第7期167-175,共9页
BACKGROUND Mild cognitive impairment(MCI)is a high-risk precursor to Alzheimer’s disease characterized by declining memory or other progressive cognitive functions without compromising daily living abilities.AIM To i... BACKGROUND Mild cognitive impairment(MCI)is a high-risk precursor to Alzheimer’s disease characterized by declining memory or other progressive cognitive functions without compromising daily living abilities.AIM To investigate the efficacy of repetitive transcranial magnetic stimulation(rTMS)in patients with MCI.METHODS This retrospective analysis involved 180 patients with MCI who were admitted to The First Hospital of Shanxi Medical University from January 2021 to June 2023.Participants were allocated into the research(n=98,receiving rTMS)and control groups(n=82,receiving sham stimulation).Memory tests,cognitive function assessments,event-related potential–P300 tests,and electroencephalogram(EEG)examinations were conducted pre-treatment and post-treatment.Further,memory quotient(MQ),cognitive function scores,and EEG grading results were compared,along with adverse reaction incidences.RESULTS Pre-treatment MQ scores,long-term and short-term memory,as well as immediate memory scores,demonstrated no notable differences between the groups.Post-treatment,the research group exhibited significant increases in MQ scores,long-term memory,and short-term memory compared to baseline(P<0.05),with these improvements being statistically superior to those in the control group.However,immediate memory scores exhibited no significant change(P>0.05).Further,the research group demonstrated statistically better post-treatment scores on the Revised Wechsler Memory Scale than the control group.Furthermore,post-treatment P300 latency and amplitude improved significantly in the research group,surpassing the control group.EEG grading in the research group improved,and the incidence of adverse reactions was significantly lower than in the control group.CONCLUSION Patients with MCI receiving rTMS therapy demonstrated improved memory and cognitive functions and EEG grading and exhibited high safety with fewer adverse reactions. 展开更多
关键词 Repetitive transcranial magnetic stimulation Mild cognitive impairment patients ELECTROENCEPHALOGram memory function Cognitive function
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Shape Memory Properties of Short-Glass Fiber Reinforced Epoxy Composite Programmed below Glass Transition Temperature
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作者 Kartikey Shahi Velmurugan Ramachandran +1 位作者 Ranjith Mohan Boomurugan Ramachandran 《Journal of Polymer Materials》 2025年第2期477-496,共20页
A Shape Memory Polymer Composite(SMPC)is developed by reinforcing an epoxy-based polymer with randomly oriented short glass fibers.Diverging from previous research,which primarily focused on the hot programming of sho... A Shape Memory Polymer Composite(SMPC)is developed by reinforcing an epoxy-based polymer with randomly oriented short glass fibers.Diverging from previous research,which primarily focused on the hot programming of short glass fiber-based SMPCs,this work explores the potential for programming below the glass transition temperature(Tg)for epoxy-based SMPCs.To mitigate the inherent brittleness of the SMPC during deformation,a linear polymer is incorporated,and a temperature between room temperature and Tg is chosen as the deformation temperature to study the shape memory properties.The findings demonstrate an enhancement in shape fixity and recovery stress,alongside a reduction in shape recovery,with the incorporation of short glass fibers.In addition to tensile properties,thermal properties such as thermal conductivity,specific heat capacity,and glass transition temperature are investigated for their dependence on fiber content.Microscopic properties,such as fiber-matrix adhesion and the dispersion of glass fibers,are examined through Scanning Electron Microscope imaging.The fiber length distribution and mean fiber lengths are also measured for different fiber fractions. 展开更多
关键词 Shape memory polymer composite glass fiber composite shape fixity shape recovery thermomechanical cycle
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Enhanced memory window and efficient resistive switching in stabilized BaTiO_(3)-based RRAM through incorporation of Al_(2)O_(3) interlayer
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作者 Akendra Singh Chabungbam Minjae Kim +2 位作者 Atul Thakre Dong-eun Kim Hyung-Ho Park 《Journal of Materials Science & Technology》 2025年第10期125-134,共10页
As artificial intelligence and big data become increasingly prevalent, resistive random-access memory (RRAM) has become one of the most promising alternatives for storing massive amounts of data. In this study, we emp... As artificial intelligence and big data become increasingly prevalent, resistive random-access memory (RRAM) has become one of the most promising alternatives for storing massive amounts of data. In this study, we employed high-quality crystalline TiN/Al_(2)O_(3)/BaTiO_(3)/Pt RRAM with an optimized thin Al_(2)O_(3) interlayer around 12 nm thick prepared using atomic layer deposition since the thickness of the interlayer affects the memory window size. After insertion of the Al_(2)O_(3) interlayer, the novel RRAM exhibited outstanding uniform resistive switching voltage and the ON/OFF memory window drastically increased from 10 to 103 without any discernible decline in performance. Moreover, the low-resistance state and high-resistance state operating current values decreased by almost one order and three orders of magnitude, respectively, thereby decreasing the power consumption for the RESET and SET processes by more than three and almost one order of magnitude, respectively. The device also exhibits multilevel resistive switching behavior when varying the applied voltage. Finally, we also developed a 6 6 crossbar array which demonstrated consistent and reliable resistive switching behavior with minimal variation. Hence, our approach holds great promise for producing state-of-the-art non-volatile resistive switching devices. 展开更多
关键词 Resistive random-access memory Resistive switching Atomic layer deposition Al_(2)O_(3)interlayer
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A shape-memory hydrogen-bonded organic framework for flue gas desulfurization
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作者 Wenlei Yang Lingyao Wang Yuanbin Zhang 《Chinese Journal of Structural Chemistry》 2025年第6期8-10,共3页
With the acceleration of industrialization,the pollution problem of sulfur dioxide(SO_(2))emitted from coal-fired power plants has become increasingly severe.Although wet flue gas desulfurization(FGD)technology can re... With the acceleration of industrialization,the pollution problem of sulfur dioxide(SO_(2))emitted from coal-fired power plants has become increasingly severe.Although wet flue gas desulfurization(FGD)technology can remove about 95%of SO_(2),its high energy consumption and the corrosion risk of downstream equipment caused by residual SO_(2)(500–3000 ppm)still need to be addressed[1].Previous porous materials(such as MOFs)achieve selective adsorption of SO_(2) through open metal sites,M–OH sites or functional organic groups,but the problem of CO_(2) co-adsorption limits their practical application[2].In recent years,hydrogen-bonded organic frameworks(HOFs)have emerged as a research hotspot due to their reversible hydrogen-bonding networks and flexible structures[3],but their stability under extreme conditions and efficient separation performance still need to be improved[4]. 展开更多
关键词 shape memory open metal sitesm oh sites downstream equipment sulfur dioxide emitted hydrogen bonded organic frameworks sulfur dioxide flue gas desulfurization wet flue gas desulfurization fgd technology
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温度对14nm FinFET SRAM单粒子效应的影响
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作者 谭钧元 郭刚 +4 位作者 张付强 江宜蓓 陈启明 韩金华 秦丰迪 《半导体技术》 北大核心 2026年第1期87-93,共7页
由于鳍式场效应晶体管静态随机存储器(FinFET SRAM)特有的鳍片电荷共享机制,其对单粒子效应(SEE)呈现出与传统平面器件截然不同的敏感特性。利用TCAD仿真构建14 nm FinFET SRAM模型并结合重离子实验加以验证,研究了温度对14 nm FinFET S... 由于鳍式场效应晶体管静态随机存储器(FinFET SRAM)特有的鳍片电荷共享机制,其对单粒子效应(SEE)呈现出与传统平面器件截然不同的敏感特性。利用TCAD仿真构建14 nm FinFET SRAM模型并结合重离子实验加以验证,研究了温度对14 nm FinFET SRAM电荷收集机制的影响。结果表明,随着温度的升高,高线性能量转移(LET)离子诱导的电荷收集过程逐渐减弱,多节点电荷收集现象也会逐渐减弱,且当环境温度达到125℃临界值时,敏感节点会出现收集电荷的雪崩式累积现象。此外,随着温度的升高,器件的翻转截面从1.27×10^(-3)cm^(2)增大到1.81×10^(-3)cm^(2),增大了约43%,且在高温下翻转截面的增大趋势愈发显著,该结果与仿真结果良好吻合。 展开更多
关键词 鳍式场效应晶体管静态随机存储器(FinFET Sram) 单粒子效应(SEE) 电荷收集 TCAD 温度
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A Transformer-Based Deep Learning Framework with Semantic Encoding and Syntax-Aware LSTM for Fake Electronic News Detection
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作者 Hamza Murad Khan Shakila Basheer +3 位作者 Mohammad Tabrez Quasim Raja`a Al-Naimi Vijaykumar Varadarajan Anwar Khan 《Computers, Materials & Continua》 2026年第1期1024-1048,共25页
With the increasing growth of online news,fake electronic news detection has become one of the most important paradigms of modern research.Traditional electronic news detection techniques are generally based on contex... With the increasing growth of online news,fake electronic news detection has become one of the most important paradigms of modern research.Traditional electronic news detection techniques are generally based on contextual understanding,sequential dependencies,and/or data imbalance.This makes distinction between genuine and fabricated news a challenging task.To address this problem,we propose a novel hybrid architecture,T5-SA-LSTM,which synergistically integrates the T5 Transformer for semantically rich contextual embedding with the Self-Attentionenhanced(SA)Long Short-Term Memory(LSTM).The LSTM is trained using the Adam optimizer,which provides faster and more stable convergence compared to the Stochastic Gradient Descend(SGD)and Root Mean Square Propagation(RMSProp).The WELFake and FakeNewsPrediction datasets are used,which consist of labeled news articles having fake and real news samples.Tokenization and Synthetic Minority Over-sampling Technique(SMOTE)methods are used for data preprocessing to ensure linguistic normalization and class imbalance.The incorporation of the Self-Attention(SA)mechanism enables the model to highlight critical words and phrases,thereby enhancing predictive accuracy.The proposed model is evaluated using accuracy,precision,recall(sensitivity),and F1-score as performance metrics.The model achieved 99%accuracy on the WELFake dataset and 96.5%accuracy on the FakeNewsPrediction dataset.It outperformed the competitive schemes such as T5-SA-LSTM(RMSProp),T5-SA-LSTM(SGD)and some other models. 展开更多
关键词 Fake news detection tokenization SMOTE text-to-text transfer transformer(T5) long short-term memory(LSTM) self-attention mechanism(SA) T5-SA-LSTM WELFake dataset FakeNewsPrediction dataset
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Novel p-Channel Selected n-Channel Divided Bit-Line NOR Flash Memory Using Source Induced Band-to-Band Hot Electron Injection Programming
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作者 潘立阳 朱钧 +2 位作者 刘楷 刘志宏 曾莹 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2002年第10期1031-1036,共6页
A novel p-channel selected n-channel divided bit-line NOR(PNOR) flash memory,which features low programming current,low power,high access current,and slight bit-line disturbance,is proposed.By using the source induced... A novel p-channel selected n-channel divided bit-line NOR(PNOR) flash memory,which features low programming current,low power,high access current,and slight bit-line disturbance,is proposed.By using the source induced band-to-band hot electron injection (SIBE) to perform programming and dividing the bit-line to the sub-bit-lines,the programming current and power can be reduced to 3.5μA and 16.5μW with the sub-bit-line width equaling to 128,and a read current of 60μA is obtained.Furthermore,the bit-line disturbance is also significantly alleviated. 展开更多
关键词 flash memory DINOR band-to-band SIBE disturbance
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A Novel Flash Memory Using Band-to-Band Tunneling Induced Hot Electron Injection to Program
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作者 潘立阳 朱钧 +2 位作者 刘志宏 曾莹 鲁勇 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2002年第7期690-694,共5页
A novel band to band hot electron programming flash memory device,which features programming with high speed,low voltage,low power consumption,large read current and short access time,is proposed.The new memory cell... A novel band to band hot electron programming flash memory device,which features programming with high speed,low voltage,low power consumption,large read current and short access time,is proposed.The new memory cell is programmed by band to band tunneling induced hot electron (BBHE) injection method at the drain,and erased by Fowler Nordheim tunneling through the source region.The work shows that the programming control gate voltage can be reduced to 8V,and the drain leakage current is only 3μA/μm.Under the proposed operating conditions,the program efficiency and the read current rise up to 4×10 -4 and 60μA/μm,respectively,and the program time can be as short as 16μs 展开更多
关键词 flash memory band to band channel hot electron Fowler Nordheim
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面向高速公路服务区自洽能源系统的RAMS评价方法
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作者 李艳波 汪静远 +3 位作者 陈圆媛 程绍峰 吕浩楠 陈俊硕 《吉林大学学报(工学版)》 北大核心 2025年第7期2243-2250,共8页
针对如何科学评价高速公路服务区自洽能源系统的弹性和能效这一难题,本文提出了一种基于传统RAMS评价方法的高速公路服务区自洽能源系统的评价方法。首先,分析了服务区自洽能源系统的结构及特点,考虑可靠性、可用性、可维修性和安全性4... 针对如何科学评价高速公路服务区自洽能源系统的弹性和能效这一难题,本文提出了一种基于传统RAMS评价方法的高速公路服务区自洽能源系统的评价方法。首先,分析了服务区自洽能源系统的结构及特点,考虑可靠性、可用性、可维修性和安全性4个方面的影响因素,建立了面向服务区自洽能源系统的评价模型,并设计评价策略。其次,基于熵权-TOPSIS法确定各项指标的权重,基于改进AHP-VIKOR法确定系统各项属性的权重,建立新型多准则综合评价体系。最后,选取某服务区作为算例进行对比分析,验证了本文方法在评价自洽能源系统方面的正确性与合理性。 展开更多
关键词 交通运输系统工程 自洽能源系统 高速服务区 多准则评价体系 ramS评价
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Power-Aware Data Management Based on Hybrid RAM-NVM Memory for Smart Bracelet 被引量:1
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作者 Jin-Yu Zhan Jun-Huan Yang +2 位作者 Wei Jiang Yi-Xin Li Yi-Ming Zhang 《Journal of Electronic Science and Technology》 CAS CSCD 2017年第4期385-390,共6页
Wearable devices become popular because they can help people observe health condition.The battery life is the critical problem for wearable devices. The non-volatile memory(NVM) attracts attention in recent years beca... Wearable devices become popular because they can help people observe health condition.The battery life is the critical problem for wearable devices. The non-volatile memory(NVM) attracts attention in recent years because of its fast reading and writing speed, high density, persistence, and especially low idle power. With its low idle power consumption,NVM can be applied in wearable devices to prolong the battery lifetime such as smart bracelet. However, NVM has higher write power consumption than dynamic random access memory(DRAM). In this paper, we assume to use hybrid random access memory(RAM)and NVM architecture for the smart bracelet system.This paper presents a data management algorithm named bracelet power-aware data management(BPADM) based on the architecture. The BPADM can estimate the power consumption according to the memory access, such as sampling rate of data, and then determine the data should be stored in NVM or DRAM in order to satisfy low power. The experimental results show BPADM can reduce power consumption effectively for bracelet in normal and sleeping modes. 展开更多
关键词 Hybrid memory non-volatile memory(NVM) POWER-AWARE smart bracelet
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COMPOSITION TRIANGLE DIAGRAMS OF Ni-Mn-Ga MAGNETIC SHAPE MEMORY ALLOYS 被引量:2
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作者 Y.F. Wang J.M. Wang C.B. Jiang H.B. Xu 《Acta Metallurgica Sinica(English Letters)》 SCIE EI CAS CSCD 2006年第3期171-175,共5页
A statistical work has been done to collect the composition ranges of Ni-Mn-Ga alloys exhibiting different structures and martensite start temperature (M,), large magnetostrain or the co-existence of magnetic and st... A statistical work has been done to collect the composition ranges of Ni-Mn-Ga alloys exhibiting different structures and martensite start temperature (M,), large magnetostrain or the co-existence of magnetic and structural transitions. The alloys with five-layered (5M), seven-layered (7M) modulated and non-modulated (T) martensitic structures were mapped in the graph. An empirical formula has been presented to reflect the effect of elements nickel (Ni ), manganese ( Mn ) and gallium (Ga), on the martensite start temperature (M3). The martensitic structure is sensitive to the composition and the martensitic transformation temperature is most drastically affected by the Ni content. The alloys with large magnetostrain or co-existence effect of the magnetic and structural transitions were also listed in a limited area. 展开更多
关键词 Ni2MnGa alloy martensitic transformation magnetic shape memory alloy
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EFFECT OF Mn CONTENT ON KINETIC PARAMETER DURING PHASE TRANSFORMATION IN CuZnAlMnNi SHAPE MEMORY ALLOYS 被引量:2
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作者 Geng, GL Bai, YJ 《中国有色金属学会会刊:英文版》 CSCD 1996年第3期150-152,共3页
EFFECTOFMnCONTENTONKINETICPARAMETERDURINGPHASETRANSFORMATIONINCuZnAlMnNiSHAPEMEMORYALLOYS¥GengGuili(Institut... EFFECTOFMnCONTENTONKINETICPARAMETERDURINGPHASETRANSFORMATIONINCuZnAlMnNiSHAPEMEMORYALLOYS¥GengGuili(InstituteforMaterialsEngi... 展开更多
关键词 Mn CONTENT CuZnAlMnNi SHAPE memory alloy phase TRANSFORMATION KINETIC PAramETER
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A Low Power SRAM/SOI Memory Cell Design
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作者 于洋 赵骞 邵志标 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2006年第2期318-322,共5页
A modified four transistor (4T) self-body-bias structured SRAM/SOI memory cell is proposed. The structure is designed and its parameters are obtained by performance simulation and analysis with TSUPREM4 and MEDICI.T... A modified four transistor (4T) self-body-bias structured SRAM/SOI memory cell is proposed. The structure is designed and its parameters are obtained by performance simulation and analysis with TSUPREM4 and MEDICI.The structure saves area and its process is simplified by using the body resistor with buried p^+ channel beneath the nMOS gate instead of the pMOS of 6T CMOS SRAM. Furthermore, this structure can operate safely with a 0.5V supply voltage, which may be prevalent in the near future. Finally, compared to conventional 6T CMOS SRAM,this structure's transient responses are normal and its power dissipation is 10 times smaller. 展开更多
关键词 Sram/SOI memory cell self body bias low power
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Preliminary abnormal electrocardiogram segment screening method for Holter data based on long short-term memory networks 被引量:2
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作者 Siying Chen Hongxing Liu 《Chinese Physics B》 SCIE EI CAS CSCD 2020年第4期208-214,共7页
Holter usually monitors electrocardiogram(ECG)signals for more than 24 hours to capture short-lived cardiac abnormalities.In view of the large amount of Holter data and the fact that the normal part accounts for the m... Holter usually monitors electrocardiogram(ECG)signals for more than 24 hours to capture short-lived cardiac abnormalities.In view of the large amount of Holter data and the fact that the normal part accounts for the majority,it is reasonable to design an algorithm that can automatically eliminate normal data segments as much as possible without missing any abnormal data segments,and then take the left segments to the doctors or the computer programs for further diagnosis.In this paper,we propose a preliminary abnormal segment screening method for Holter data.Based on long short-term memory(LSTM)networks,the prediction model is established and trained with the normal data of a monitored object.Then,on the basis of kernel density estimation,we learn the distribution law of prediction errors after applying the trained LSTM model to the regular data.Based on these,the preliminary abnormal ECG segment screening analysis is carried out without R wave detection.Experiments on the MIT-BIH arrhythmia database show that,under the condition of ensuring that no abnormal point is missed,53.89% of normal segments can be effectively obviated.This work can greatly reduce the workload of subsequent further processing. 展开更多
关键词 ELECTROCARDIOGram LONG SHORT-TERM memory network kernel density estimation MIT-BIH ARRHYTHMIA database
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Program Error Mitigation in MLC NAND Flash Memory with Soft Decision Decoders 被引量:1
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作者 Zequn Fang Zheng Ma +2 位作者 Xiaohu Tang Yue Xiao Youhua Tang 《China Communications》 SCIE CSCD 2021年第4期76-87,共12页
Benefiting from strong decoding capabilities,soft-decision decoding has been used to replace hard-decision decoding in various communication systems,and NAND flash memory systems are no exception.However,soft-decision... Benefiting from strong decoding capabilities,soft-decision decoding has been used to replace hard-decision decoding in various communication systems,and NAND flash memory systems are no exception.However,soft-decision decoding relies heavily on accurate soft information.Owing to the incremental step pulse programming(ISPP),program errors(PEs)in multi-level cell(MLC)NAND flash memory have different characteristics compared to other types of errors,which is very difficult to obtain such accurate soft information.Therefore,the characteristics of the log-likelihood ratio(LLR)of PEs are investigated first in this paper.Accordingly,a PE-aware statistical method is proposed to determine the usage of PE mitigation schemes.In order to reduce the PE estimating workload of the controller,an adaptive blind clipping(ABC)scheme is proposed subsequently to approximate the PEs contaminated LLR with different decoding trials.Finally,simulation results demonstrate that(1)the proposed PE-aware statistical method is effective in practice,and(2)ABC scheme is able to provide satisfactory bit error rate(BER)and frame error rate(FER)performance in a penalty of negligible increasing of decoding latency. 展开更多
关键词 program errors soft-decision decoder NAND flash memory clipping approximation
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Design of 32 kbit one-time programmable memory for microcontroller units 被引量:1
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作者 JEON Hwang-gon CHOI In-hwa +1 位作者 HA Pan-bong KIM Young-hee 《Journal of Central South University》 SCIE EI CAS 2012年第12期3475-3483,共9页
A 32 kbit OTP(one-time programmable)memory for MCUs(micro-controller units)used in remote controllers was designed.This OTP memory is used for program and data storage.It is required to apply 5.5V to BL(bit-line)and 1... A 32 kbit OTP(one-time programmable)memory for MCUs(micro-controller units)used in remote controllers was designed.This OTP memory is used for program and data storage.It is required to apply 5.5V to BL(bit-line)and 11V to WL(word-line)for a OTP cell of 0.35μm ETOX(EEPROM tunnel oxide)type by MagnaChip.We use 5V transistors on column data paths to reduce the area of column data paths since they require small areas.In addition,we secure device reliability by using HV(high-voltage)transistors in the WL driver.Furthermore,we change from a static logic to a dynamic logic used for the WL driver in the core circuit.Also,we optimize the WD(write data)switch circuit.Thus,we can implement them with a small-area design.In addition,we implement the address predecoder with a small-area logic circuit.The area of the designed 32 kbit OTP with 5V and HV devices is 674.725μm×258.75μm(=0.1745mm2)and is 56.3% smaller than that using 3.3V devices. 展开更多
关键词 one-time programmable memory micro controller unit EEPROM tunnel oxide small-area
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