60CeO2-40TiO2 thin films were deposited on soda-lime silicate glass substrates by R.F. magnetron sputtering. The effects of heat-treatment on the UV-absorption of the thin films were studied on the 60CeO2-40TiO2 thin ...60CeO2-40TiO2 thin films were deposited on soda-lime silicate glass substrates by R.F. magnetron sputtering. The effects of heat-treatment on the UV-absorption of the thin films were studied on the 60CeO2-40TiO2 thin film with the largest UV cut-off wavelength. The sample films with CeO2：TiO2=60：40 were heated at 773 K, 873 K, 973 K for 30 min. These films are characterized by X-ray diffraction （XRD）, scanning electron microscopy （SEM）, and X-ray photoelectron spectroscopy and spectrometer （XPS）. XRD analysis proves that the addition of TiO2 to CeO2 changed the crystalline state of CeO2. But the UV absorption effect of CeO2-TiO2 films with CeO2 crystallite phase is inferior to that of the amorphous phase CeO2-TiO2 films. XPS analysis also indicates that the amorphous phase CeO2-TiO2 films have the most Ce3＋ content in these films. Amorphous phase and crystalline phase of the CeO2-TiO2 films have different effects on UV absorption of the thin films.展开更多
In the present study,WB 2（N） films are fabricated on silicon and YG8 substrates at different N 2 pressures by reactive magnetron sputtering.The influence of N 2 partial pressure（P （N2）） on the film microstructur...In the present study,WB 2（N） films are fabricated on silicon and YG8 substrates at different N 2 pressures by reactive magnetron sputtering.The influence of N 2 partial pressure（P （N2）） on the film microstructure and characteristics is studied systematically,including the chemical composition,crystalline structure,residual stress,surface roughness as well as the surface and the cross-section morphology.Meanwhile,nano-indentation and ball-on-disk tribometer are performed to analyze the mechanical and tribological properties of the films.The results show that the addition of nitrogen apparently leads to the change of the structure from（1 0 1） to（0 0 1） orientation then to the amorphous structure with the formation of BN phase.And the addition of nitrogen can greatly refine the grain size and microstructure of the films.Furthermore,the residual stress of the film is also found to change from tensile to compressive stress as a function of P （N2）,and the compressive stress increases with P （N2）,The WB 2（N） films with small nitrogen content,which are deposited at P （N2） of 0.004 and 0.006 Pa,exhibit better mechanical,tribological and corrosion properties than those of other films.Further increase of nitrogen content accelerates the formation of BN phase and fast decreases the film hardness.In addition,the large N 2 partial pressure gives rise to the target poisoning accompanied by the increase of the target voltage and the decrease of the deposition rate.展开更多
TiO2 films were deposited at room temperature by DC pulse magnetron sputtering system.The crystalline structures,morphological features and photocatalytic activity of TiO2 films were systematically investigated by X-r...TiO2 films were deposited at room temperature by DC pulse magnetron sputtering system.The crystalline structures,morphological features and photocatalytic activity of TiO2 films were systematically investigated by X-ray diffraction（XRD）,atomic force microscopy（AFM） and ultraviolet spectrophotometer,respectively.The results indicated that working pressure was the key deposition parameter in？uencing the TiO2 film phase composition at room temperature,which directly affected its photocatalytic activity.With increasing working pressure,the target self-bias decreases monotonously.Therefore,low temperature TiO2 phase（anatase） could be deposited with high working pressure.The anatase TiO2 films deposited with 1.4 Pa working pressure displayed the highest photocatalytic activity by the decomposition of Methyl Orange solution,which the degradation rate reached the maximum（35%） after irradiation by ultraviolet light for 1 h.展开更多
With rapid progressive application of TiO2 thin films, magnetron sputtering becomes a very interesting method to prepare such multi-functional thin films. This paper focuses on influences of various deposition process...With rapid progressive application of TiO2 thin films, magnetron sputtering becomes a very interesting method to prepare such multi-functional thin films. This paper focuses on influences of various deposition processes and deposition rate on the structures and properties of TiO2 thin films. Anatase, rutile or amorphous TiO2 films with various crystalline structures and different photocatalytic, optical and electrical properties can be produced by varying sputtering gases, substrate temperature, annealing process, deposition rate and the characteristics of magnetron sputtering. This may in turn affect the functions of TiO2 films in many applications. Furthermore, TiO2-based composites films can overcome many limitations and improve the properties of TiO2 films.展开更多
TiO2 thin film has attracted considerable attention in recent years, due to its different refractive index and transparency with amorphous and different crysta ls in the visible and near-infrared wavelength region, hi...TiO2 thin film has attracted considerable attention in recent years, due to its different refractive index and transparency with amorphous and different crysta ls in the visible and near-infrared wavelength region, high dielectric constant, wide band gap, high wear resistance and stability, etc, for which make it being used in many fields. This paper aims to investigate the optical characterizatio n of thin film TiO2 on silicon wafer. The TiO2 thin films were prepared by DC re active magnetron sputtering process from Ti target. The reflectivity of the film s was measured by UV-3101PC, and the index of refraction (n) and extinction coef ficient (k) were measured by n & k Analyzer 1200.展开更多
Tin oxide （SnO2） is one of the most promising transparent conducting oxide materials, which is widely used in thin film gas sensors. We investigate the dependence of the deposition time on structural, morphologicaJ ...Tin oxide （SnO2） is one of the most promising transparent conducting oxide materials, which is widely used in thin film gas sensors. We investigate the dependence of the deposition time on structural, morphologicaJ and hydrogen gas sensing properties of SnO2 thin films synthesized by dc magnetron sputtering. The deposited samples are characterized by XRD, SEM, AFM, surface area measurements and surface profiler. Also the H2 gas sensing properties of SnO2 deposited samples are performed against a wide range of operating temperature. The XRD analysis demonstrates that the degree of crystallinity of the deposited SnO2 films strongly depends on the deposition time. SEM and AFM analyses reveal that the size of nanoparticles or agglomerates, and both average and rms surface roughness is enhanced with the increasing deposition time. Also gas sensors based on these SnO2 nanolayers show an acceptable response to hydrogen at various operating temperatures.展开更多
TiO2 thin films were prepared by DC magnetron sputtering with the oxygen flow rate higher than the threshold. The film deposited for 5 h was of anatase phase with a preferred orientation along the <220> directio...TiO2 thin films were prepared by DC magnetron sputtering with the oxygen flow rate higher than the threshold. The film deposited for 5 h was of anatase phase with a preferred orientation along the <220> direction, but the films deposited for 2 and 3 h were amorphous. The transmittance and photocatalytic activity of the TiO2 films increased constantly with increasing film thickness. When the annealing temperature was lower than 700℃, only anatase grew in the TiO2 film. TiO2 phase changed from anatase to rutile when the annealing temperature was above 800℃. The photocatalytic activity decreased with increasing annealing temperature.展开更多
Gd2O3 thin films as high-κ gate dielectrics were deposited directly on Si（001） substrates by magnetron sputtering at a pressure of 1.3 Pa and different temperatures. X-ray diffraction results revealed that all the ...Gd2O3 thin films as high-κ gate dielectrics were deposited directly on Si（001） substrates by magnetron sputtering at a pressure of 1.3 Pa and different temperatures. X-ray diffraction results revealed that all the films grown from 450 to 570 ℃ were crystalline, and the Gd2O3 thin films consisted of a mixture of cubic and monoclinic phases. The growth temperature was a critical parameter for the phase constituents and their relative amount. Low temperature was favorable for the formation of cubic phase while higher temperature gave rise to more monoclinic phase. All the Gd2O3 thin films grown from different temperatures exhibited acceptable electrical properties, such as low leakage current density （JL） of 10-5 A/cm^2 at zero bias with capacitance equivalent SiO2 thickness in the range of 6-13 nm. Through the comparison between films grown at 450 and 570 ℃, the existence of monoclinic phase caused an increase in JL by nearly one order of magnitude and a reduction of effective dielectric constant from 17 to 9.展开更多
Ta-doped titanium dioxide films are deposited on fused quartz substrates using the rf magnetron sputtering technique at different substrate temperatures. After post-annealing at 550℃ in a vacuum, all the films are cr...Ta-doped titanium dioxide films are deposited on fused quartz substrates using the rf magnetron sputtering technique at different substrate temperatures. After post-annealing at 550℃ in a vacuum, all the films are crystallized into the polycrystalline anatase TiO2 structure. The effects of substrate temperature from room temperature up to 350℃ on the structure, morphology, and photoelectric properties of Ta-doped titanium dioxide films are analyzed. The average transmittance in the visible region（400-800 nm） of all films is more than 73%.The resistivity decreases firstly and then increases moderately with the increasing substrate temperature. The polycrystalline film deposited at 150℃ exhibits a lowest resistivity of 7.7 × 10^-4Ω·cm with the highest carrier density of 1.1×10^21 cm^-3 and the Hall mobility of 7.4 cm^2·V^-1s^-1.展开更多
Chrome-doped titanium oxide films were prepared by reactive magnetron sputtering method. The films deposited on glass slides at room temperature were investigated by atom force microscope, X-ray diffractometer, X-ray ...Chrome-doped titanium oxide films were prepared by reactive magnetron sputtering method. The films deposited on glass slides at room temperature were investigated by atom force microscope, X-ray diffractometer, X-ray photoelectron spectroscopy, UV-Vis spectrophotometer, the photoluminescence （PL） and ellipse polarization apparatus. The results indicate that TiO2-Cr film exists in the form of amorphous. The prepared films possess a band gap of less than 3.20 eV, and a new absorption peak. The films, irradiated for 5 h under UV light, exhibit excellent photocatalytic activities with the optimum decomposition rate at 98.5% for methylene blue. Consequently, the thickness threshold on these films is 114 nm, at which the rate of photodegradation is 95% in 5 h. When the thickness is over 114 nm, the rate of photodegradation becomes stable. This result is completely different from that of crystalloid TiO2 thin film.展开更多
The influence of amorphous TiO_2 seeding layers on the phase composition of lead magnesium niobate-lead titanate(0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3,PMN-PT) films deposited on Pt/Ti/SiO2/Si substrate by RF magnetron sputter...The influence of amorphous TiO_2 seeding layers on the phase composition of lead magnesium niobate-lead titanate(0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3,PMN-PT) films deposited on Pt/Ti/SiO2/Si substrate by RF magnetron sputtering was examined.The relation between seeding layer thickness and phase composition at different post annealing temperature was observed by XRD.The thickness of amorphous TiO2 seeding layer and post annealing temperature had remarkable effects on PMN-PT film phase composition.When amorphous seeding layer becomes thick,a new phase of Nb2O5 exists in the films.Only when the seeding layer thickness is suitable,the film with pure perovskite phase can be attained.展开更多
The effects of the oxygen-argon ratio on electric properties of Ta2O5 film prepared by radio-frequency magnetron sputtering were investigated.The Ta2O5 partially transforms from the amorphous phase into the crystal ph...The effects of the oxygen-argon ratio on electric properties of Ta2O5 film prepared by radio-frequency magnetron sputtering were investigated.The Ta2O5 partially transforms from the amorphous phase into the crystal phase when annealing temperatures are 800℃ or higher.The lattice constant of Ta2O5 decreases with the increase of the O2/Ar ratio,which indicates that oxygen gas in the working gas mixture contributes to reducing the density of oxygen vacancies during the deposition process.For the films deposited in working gas mixtures with different O2/Ar ratios and subsequently annealed at 700℃,the effective dielectric constant is increased from 14.7 to 18.4 with the increase of the O2/Ar ratio from 0 to 1.Considering the presence of an SiO2 layer between the film and the silicon substrate,the optimal dielectric constant of Ta2O5 film was estimated to be 31.Oxygen gas in the working gas mixture contributes to reducing the density of oxygen vacancies,and the oxygen vacancy density and leakage current of Ta2O5 film both decrease with the increase of the O2/Ar ratio.The leakage current decreases after annealing treatment and it is minimized at 700℃.However,when the annealing temperature is 800℃ or higher,it increases slightly,which results from the partially crystallized Ta2O5 layer containing defects such as grain boundaries and vacancies.展开更多
Transparent TiO2 thin films were successfully prepared on high purity silica substrates by DC reactive magnetron sputtering method and annealed at different temperatures. The effects of the annealing temperature （300...Transparent TiO2 thin films were successfully prepared on high purity silica substrates by DC reactive magnetron sputtering method and annealed at different temperatures. The effects of the annealing temperature （300-600 ℃） on crystalline structure, morphology, and photocatalytic activity of the TiO2 thin films were discussed. The photocatalytic activity of the films was evaluated by photodegradation of methylene blue solution. With increasing annealing temperature, the photocatalytic activity of the TiO2 thin films gradually increased because of the improvement of crystallization of anatase TiO2 thin films. At 500 ℃, the TiO2 thin film shows the highest photocatalytic activity due to the improvement of crystallization of anatase TiO2 thin films. When the annealing temperature increases to 600 ℃, the photocatalytic activity of thin film decreases owing to the formation of rutile phase and the decrease of surface area.展开更多
Copper nitride thin films were deposited on glass substrates by reactive direct current （DC） magnetron sputtering at various N2-gas partial pressures and room temperature. Xray diffraction measurements showed that t...Copper nitride thin films were deposited on glass substrates by reactive direct current （DC） magnetron sputtering at various N2-gas partial pressures and room temperature. Xray diffraction measurements showed that the films were composed of Cu3N crystallites and exhibited a preferential orientation of the [111] direction at a low nitrogen gas （N2） partial pressure. The film growth preferred the [111] and the [100] direction at a high N2 partial pressure. Such preferential film growth is interpreted as being due to the variation in the Copper （Cu） nitrification rate with the N2 pressure. The N2 partial pressure affects not only the crystal structure of the film but also the deposition rate and the resistivity of the Cu3N film. In our experiment, the deposition rate of Cu3N films was 18 nm/min to 30 nm/min and increased with the N2 partial pressure. The resistivity of the Cu3N films increased sharply with the increasing N2 partial pressure. At a low N2 partial pressure, the Cu3N films showed a metallic conduction mechanism through the Cu path, and at a high N2 partial pressure, the conductivity of the Cu3N films showed a semiconductor conduction mechanism.展开更多
We improved the photovoltaic properties of Cu_2O-based heterojunction solar cells using n-type oxide semiconductor thin films prepared by a sputtering apparatus with our newly developed multi-chamber system. We also o...We improved the photovoltaic properties of Cu_2O-based heterojunction solar cells using n-type oxide semiconductor thin films prepared by a sputtering apparatus with our newly developed multi-chamber system. We also obtained the highest efficiency(3.21%) in an AZO/p-Cu_2O heterojunction solar cell prepared with optimized pre-sputtering conditions using our newly developed multi-chamber sputtering system. This value achieves the same or higher characteristics than AZO/Cu_2O solar cells with a similar structure prepared by the pulse laser deposition method.展开更多
The work is mainly to study the thermal stability including the phase stability, microstructure and tribo-mechanical properties of the AlB_2-type WB_2 and W–B–N(5.6 at.% N) films annealed in vacuum at various temper...The work is mainly to study the thermal stability including the phase stability, microstructure and tribo-mechanical properties of the AlB_2-type WB_2 and W–B–N(5.6 at.% N) films annealed in vacuum at various temperatures, which are deposited on Si and GY8 substrates by magnetron sputtering. For the WB_2 and W–B–N films deposited on Si wafers, as the annealing temperature increases from 700 to 1000 °C, a-WB(700 °C) and Mo_2B_5-type WB_2(1000 °C) are successively observed in the AlB_2-type WB_2 films, which show many cracks at the temperature ≥ 800 °C resulting in the performance failure; by contrast, only slight α-WB is observed at 1000 °C in the W–B–N films due to the stabilization eff ect of a-BN phase, and the hardness increases to 34.1 GPa fi rst due to the improved crystallinity and then decreases to 31.5 GPa ascribed to the formation of α-WB. For the WB_2 and the W–B–N films deposited on WC–Co substrates, both the WB_2 and W–B–N films react with the YG8(WC–Co) substrates leading to the formation of CoWB, CoW_2B_2 and CoW_3B_3 with the annealing temperature increasing to 900 °C; a large number of linear cracks occur on the surface of these two films annealed at ≥ 800 °C leading to the fi lm failure; after vacuum annealing at 700 °C, the friction performance of the W–B–N films is higher than that of the deposited W–B–N films, while the wear resistance of the WB_2 films shows a slight decrease compared with that of the deposited WB_2 films.展开更多
TiO2 rutile/anatase heterostructure thin films with varying rutile thickness have been in-situ synthesized via DC magnetron sputtering with Ar gas at room temperature. The crystal texture, surface morphology, energy g...TiO2 rutile/anatase heterostructure thin films with varying rutile thickness have been in-situ synthesized via DC magnetron sputtering with Ar gas at room temperature. The crystal texture, surface morphology, energy gap and optical properties of the films have been investigated by X-ray diffraction meter, grazing incidence X-ray diffraction meter, Raman spectroscopy, scanning electron microscopy, and UV–visible spectrophotometer, which indicates that the rutile/anatase heterostructure films are successfully fabricated. The further degradation experiments display that the photocatalytic activity can be dramatically affected by the thickness of the outmost rutile layer and the 100 nm thickness exhibits the best performance in all of the TiO2 thin films. With the increase of the outmost rutile layer, the optical band gap of TiO2 film displays a systematic decrease slightly. However,the change in photocatalytic activity does not coincide with that in the band gap. The photoresponse and electrochemical properties of the thin films have been characterized to understand the mechanism of the varied photocatalytic activity.展开更多
Tungsten doped indium oxide （IWO） thin films were deposited on glass substrate at room temperature by radio frequency reactive magnetron sputtering. Chemical states analysis was carried out, indicating that valence ...Tungsten doped indium oxide （IWO） thin films were deposited on glass substrate at room temperature by radio frequency reactive magnetron sputtering. Chemical states analysis was carried out, indicating that valence states of element W in the films were W4＋ and W6＋. The effects of sputtering power and film thickness on the surface morphology, optical and electrical properties of IWO thin films were investigated. The IWO thin films had high transmittance in near infrared （NIR） spectral range. The resistivity, carrier mobility and carrier concentration owned their respective optimum values as sputtering power and thickness changed. The asdeposited IWO film with the minimum resistivity of 3.23 × 10^-4 Ω cm was obtained at a sputtering power of 50 W, with carrier mobility of 27.1 cm2 V-1 s-1, carrier concentration of 7.15 × 10^20 cm-3, average transmittance about 80% in visible region and above 75% in NIR region. It may meet the application requirement of high conductivity and transparency in NIR wavelength region.展开更多
This paper reports that a series of silver oxide （AgzO） films are deposited on glass substrates by direct-current reactive magnetron sputtering at a substrate temperature of 250 ℃ and an oxygen flux ratio of 15：18...This paper reports that a series of silver oxide （AgzO） films are deposited on glass substrates by direct-current reactive magnetron sputtering at a substrate temperature of 250 ℃ and an oxygen flux ratio of 15：18 by modifying the sputtering power （SP）. The AgxO films deposited apparently show a structural evolution from cubic biphased （AgO ＋ Ag20） to cubic single-phased （Ag20）, and to biphased （Ag20 ＋ AgO） structure. Notably, the cubic single-phased Ag20 fihn is deposited at the SP = 105 W and an AgO phase with （220） orientation discerned in the Ag^O films deposited using the SP 〉 105 W. The transmissivity and refiectivity of the AgxO films in transparent region decrease with the increase the SP, whereas the absorptivity inversely increases with the increase of the SP. These results may be due to the structural evolution and the increasing film thickness. A redshift of the films＇ absorption edges determined in terms of Tauc formula clearly occurs from 3.1 eV to 2.73 eV with the increase of the SP.展开更多
CeO2-TiO2 films and CeO2-TiO/SnO2：Sb （6 mol%） double films were deposited on glass substrates by radio-frequency magnetron sputtering （R.F. Sputtering）, using SnO2：Sb（6 mol%） target, and CeO2- TiO2 targets wit...CeO2-TiO2 films and CeO2-TiO/SnO2：Sb （6 mol%） double films were deposited on glass substrates by radio-frequency magnetron sputtering （R.F. Sputtering）, using SnO2：Sb（6 mol%） target, and CeO2- TiO2 targets with different molar ratio of CeO2 to TiO2 （CeO2：TiO2-0：1.0; 0.1：0.9; 0.2：0.8; 0.3：0.7; 0.4：0.6; 0.5：0.5; 0.6：0.4; 0.7：0.3; 0.8：0.2; 0.9：0.1; 1.0：0）. The films are characterized by UV-visible transmission and infrared reflection spectra, scanning electron microscopy （SEM）, Raman spectroscopy, X-ray photoelectron spectroscopy （XPS） and X-ray diffraction （XRD）, respectively. The obtained results show that the amorphous phases composed of CeO2-TiO2 play an important role in absorbing UV, there are Ce^3-, Ce^4- and Ti^4- on the surface of the films; the glass substrates coated with CeO2-TiO2 （Ce/Ti=0.5：0.5; 0.6：0.4）/SnO2：Sb（6 mol%） double films show high absorbing UV（〉99）, high visible light transmission （75%） and good infrared reflection （〉70%）. The sheet resistance of the films is 30-50 Ω/□. The glass substrates coated with the double functional films can be used as window glass of buildings, automobile and so on.展开更多
基金the National Natural Science Foundation of China(No.51032005)the Fundamental Research Funds for the Central Universities(Wuhan University of Technology)+1 种基金the China Postdoctoral Science Foundation(No.2012M511285)the Fund for the Young Innovative Team(Hubei University of Education)(No.2012KQ05)
文摘60CeO2-40TiO2 thin films were deposited on soda-lime silicate glass substrates by R.F. magnetron sputtering. The effects of heat-treatment on the UV-absorption of the thin films were studied on the 60CeO2-40TiO2 thin film with the largest UV cut-off wavelength. The sample films with CeO2：TiO2=60：40 were heated at 773 K, 873 K, 973 K for 30 min. These films are characterized by X-ray diffraction （XRD）, scanning electron microscopy （SEM）, and X-ray photoelectron spectroscopy and spectrometer （XPS）. XRD analysis proves that the addition of TiO2 to CeO2 changed the crystalline state of CeO2. But the UV absorption effect of CeO2-TiO2 films with CeO2 crystallite phase is inferior to that of the amorphous phase CeO2-TiO2 films. XPS analysis also indicates that the amorphous phase CeO2-TiO2 films have the most Ce3＋ content in these films. Amorphous phase and crystalline phase of the CeO2-TiO2 films have different effects on UV absorption of the thin films.
基金supported by the National Key Basic Research Program of China (973 Program,No.2012CB625100)the Natural Science Foundation of Liaoning Province of China (No.2013020093)
文摘In the present study,WB 2（N） films are fabricated on silicon and YG8 substrates at different N 2 pressures by reactive magnetron sputtering.The influence of N 2 partial pressure（P （N2）） on the film microstructure and characteristics is studied systematically,including the chemical composition,crystalline structure,residual stress,surface roughness as well as the surface and the cross-section morphology.Meanwhile,nano-indentation and ball-on-disk tribometer are performed to analyze the mechanical and tribological properties of the films.The results show that the addition of nitrogen apparently leads to the change of the structure from（1 0 1） to（0 0 1） orientation then to the amorphous structure with the formation of BN phase.And the addition of nitrogen can greatly refine the grain size and microstructure of the films.Furthermore,the residual stress of the film is also found to change from tensile to compressive stress as a function of P （N2）,and the compressive stress increases with P （N2）,The WB 2（N） films with small nitrogen content,which are deposited at P （N2） of 0.004 and 0.006 Pa,exhibit better mechanical,tribological and corrosion properties than those of other films.Further increase of nitrogen content accelerates the formation of BN phase and fast decreases the film hardness.In addition,the large N 2 partial pressure gives rise to the target poisoning accompanied by the increase of the target voltage and the decrease of the deposition rate.
基金supported by the Dalian Foundation for Development of Science and Technology (No.2006A13GX029)
文摘TiO2 films were deposited at room temperature by DC pulse magnetron sputtering system.The crystalline structures,morphological features and photocatalytic activity of TiO2 films were systematically investigated by X-ray diffraction（XRD）,atomic force microscopy（AFM） and ultraviolet spectrophotometer,respectively.The results indicated that working pressure was the key deposition parameter in？uencing the TiO2 film phase composition at room temperature,which directly affected its photocatalytic activity.With increasing working pressure,the target self-bias decreases monotonously.Therefore,low temperature TiO2 phase（anatase） could be deposited with high working pressure.The anatase TiO2 films deposited with 1.4 Pa working pressure displayed the highest photocatalytic activity by the decomposition of Methyl Orange solution,which the degradation rate reached the maximum（35%） after irradiation by ultraviolet light for 1 h.
文摘With rapid progressive application of TiO2 thin films, magnetron sputtering becomes a very interesting method to prepare such multi-functional thin films. This paper focuses on influences of various deposition processes and deposition rate on the structures and properties of TiO2 thin films. Anatase, rutile or amorphous TiO2 films with various crystalline structures and different photocatalytic, optical and electrical properties can be produced by varying sputtering gases, substrate temperature, annealing process, deposition rate and the characteristics of magnetron sputtering. This may in turn affect the functions of TiO2 films in many applications. Furthermore, TiO2-based composites films can overcome many limitations and improve the properties of TiO2 films.
基金This work was supported by the National Natural Science Foundation of China(No,50376067)the Plan for Science&Technology Development of Guangzhou(2001-Z-117-01).
文摘TiO2 thin film has attracted considerable attention in recent years, due to its different refractive index and transparency with amorphous and different crysta ls in the visible and near-infrared wavelength region, high dielectric constant, wide band gap, high wear resistance and stability, etc, for which make it being used in many fields. This paper aims to investigate the optical characterizatio n of thin film TiO2 on silicon wafer. The TiO2 thin films were prepared by DC re active magnetron sputtering process from Ti target. The reflectivity of the film s was measured by UV-3101PC, and the index of refraction (n) and extinction coef ficient (k) were measured by n & k Analyzer 1200.
基金Supported by the Bandar Abbas Branch of the Islamic Azad University
文摘Tin oxide （SnO2） is one of the most promising transparent conducting oxide materials, which is widely used in thin film gas sensors. We investigate the dependence of the deposition time on structural, morphologicaJ and hydrogen gas sensing properties of SnO2 thin films synthesized by dc magnetron sputtering. The deposited samples are characterized by XRD, SEM, AFM, surface area measurements and surface profiler. Also the H2 gas sensing properties of SnO2 deposited samples are performed against a wide range of operating temperature. The XRD analysis demonstrates that the degree of crystallinity of the deposited SnO2 films strongly depends on the deposition time. SEM and AFM analyses reveal that the size of nanoparticles or agglomerates, and both average and rms surface roughness is enhanced with the increasing deposition time. Also gas sensors based on these SnO2 nanolayers show an acceptable response to hydrogen at various operating temperatures.
基金supported by the National Natural Science Foundation of China(No.50001013)Hundred-Talent Project of CAS and the NSFC for Outstanding Young Scientists(No.59625103).
文摘TiO2 thin films were prepared by DC magnetron sputtering with the oxygen flow rate higher than the threshold. The film deposited for 5 h was of anatase phase with a preferred orientation along the <220> direction, but the films deposited for 2 and 3 h were amorphous. The transmittance and photocatalytic activity of the TiO2 films increased constantly with increasing film thickness. When the annealing temperature was lower than 700℃, only anatase grew in the TiO2 film. TiO2 phase changed from anatase to rutile when the annealing temperature was above 800℃. The photocatalytic activity decreased with increasing annealing temperature.
基金General Research Institute for Nonferrous Metals Research Fund (82262)
文摘Gd2O3 thin films as high-κ gate dielectrics were deposited directly on Si（001） substrates by magnetron sputtering at a pressure of 1.3 Pa and different temperatures. X-ray diffraction results revealed that all the films grown from 450 to 570 ℃ were crystalline, and the Gd2O3 thin films consisted of a mixture of cubic and monoclinic phases. The growth temperature was a critical parameter for the phase constituents and their relative amount. Low temperature was favorable for the formation of cubic phase while higher temperature gave rise to more monoclinic phase. All the Gd2O3 thin films grown from different temperatures exhibited acceptable electrical properties, such as low leakage current density （JL） of 10-5 A/cm^2 at zero bias with capacitance equivalent SiO2 thickness in the range of 6-13 nm. Through the comparison between films grown at 450 and 570 ℃, the existence of monoclinic phase caused an increase in JL by nearly one order of magnitude and a reduction of effective dielectric constant from 17 to 9.
基金Supported by the National Natural Science Foundation of China under Grant No 11374114
文摘Ta-doped titanium dioxide films are deposited on fused quartz substrates using the rf magnetron sputtering technique at different substrate temperatures. After post-annealing at 550℃ in a vacuum, all the films are crystallized into the polycrystalline anatase TiO2 structure. The effects of substrate temperature from room temperature up to 350℃ on the structure, morphology, and photoelectric properties of Ta-doped titanium dioxide films are analyzed. The average transmittance in the visible region（400-800 nm） of all films is more than 73%.The resistivity decreases firstly and then increases moderately with the increasing substrate temperature. The polycrystalline film deposited at 150℃ exhibits a lowest resistivity of 7.7 × 10^-4Ω·cm with the highest carrier density of 1.1×10^21 cm^-3 and the Hall mobility of 7.4 cm^2·V^-1s^-1.
文摘Chrome-doped titanium oxide films were prepared by reactive magnetron sputtering method. The films deposited on glass slides at room temperature were investigated by atom force microscope, X-ray diffractometer, X-ray photoelectron spectroscopy, UV-Vis spectrophotometer, the photoluminescence （PL） and ellipse polarization apparatus. The results indicate that TiO2-Cr film exists in the form of amorphous. The prepared films possess a band gap of less than 3.20 eV, and a new absorption peak. The films, irradiated for 5 h under UV light, exhibit excellent photocatalytic activities with the optimum decomposition rate at 98.5% for methylene blue. Consequently, the thickness threshold on these films is 114 nm, at which the rate of photodegradation is 95% in 5 h. When the thickness is over 114 nm, the rate of photodegradation becomes stable. This result is completely different from that of crystalloid TiO2 thin film.
文摘The influence of amorphous TiO_2 seeding layers on the phase composition of lead magnesium niobate-lead titanate(0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3,PMN-PT) films deposited on Pt/Ti/SiO2/Si substrate by RF magnetron sputtering was examined.The relation between seeding layer thickness and phase composition at different post annealing temperature was observed by XRD.The thickness of amorphous TiO2 seeding layer and post annealing temperature had remarkable effects on PMN-PT film phase composition.When amorphous seeding layer becomes thick,a new phase of Nb2O5 exists in the films.Only when the seeding layer thickness is suitable,the film with pure perovskite phase can be attained.
基金Project supported by the National Natural Science Foundation of China (Grant No. 61076055)the Program for Innovative Research Teams in Zhejiang Normal Universitythe Open Project Program of Surface Physics Laboratory (National Key Laboratory) of Fudan University (Grant No. FDS KL2011_04)
文摘The effects of the oxygen-argon ratio on electric properties of Ta2O5 film prepared by radio-frequency magnetron sputtering were investigated.The Ta2O5 partially transforms from the amorphous phase into the crystal phase when annealing temperatures are 800℃ or higher.The lattice constant of Ta2O5 decreases with the increase of the O2/Ar ratio,which indicates that oxygen gas in the working gas mixture contributes to reducing the density of oxygen vacancies during the deposition process.For the films deposited in working gas mixtures with different O2/Ar ratios and subsequently annealed at 700℃,the effective dielectric constant is increased from 14.7 to 18.4 with the increase of the O2/Ar ratio from 0 to 1.Considering the presence of an SiO2 layer between the film and the silicon substrate,the optimal dielectric constant of Ta2O5 film was estimated to be 31.Oxygen gas in the working gas mixture contributes to reducing the density of oxygen vacancies,and the oxygen vacancy density and leakage current of Ta2O5 film both decrease with the increase of the O2/Ar ratio.The leakage current decreases after annealing treatment and it is minimized at 700℃.However,when the annealing temperature is 800℃ or higher,it increases slightly,which results from the partially crystallized Ta2O5 layer containing defects such as grain boundaries and vacancies.
基金Supported by the National Natural Foundation of Science(11004052)the Foundation of Hubei Educational Committee (Q20101403)
文摘Transparent TiO2 thin films were successfully prepared on high purity silica substrates by DC reactive magnetron sputtering method and annealed at different temperatures. The effects of the annealing temperature （300-600 ℃） on crystalline structure, morphology, and photocatalytic activity of the TiO2 thin films were discussed. The photocatalytic activity of the films was evaluated by photodegradation of methylene blue solution. With increasing annealing temperature, the photocatalytic activity of the TiO2 thin films gradually increased because of the improvement of crystallization of anatase TiO2 thin films. At 500 ℃, the TiO2 thin film shows the highest photocatalytic activity due to the improvement of crystallization of anatase TiO2 thin films. When the annealing temperature increases to 600 ℃, the photocatalytic activity of thin film decreases owing to the formation of rutile phase and the decrease of surface area.
基金the Key Programme of the Education Department of Hubei Province,China(2003A001,D200529002)
文摘Copper nitride thin films were deposited on glass substrates by reactive direct current （DC） magnetron sputtering at various N2-gas partial pressures and room temperature. Xray diffraction measurements showed that the films were composed of Cu3N crystallites and exhibited a preferential orientation of the [111] direction at a low nitrogen gas （N2） partial pressure. The film growth preferred the [111] and the [100] direction at a high N2 partial pressure. Such preferential film growth is interpreted as being due to the variation in the Copper （Cu） nitrification rate with the N2 pressure. The N2 partial pressure affects not only the crystal structure of the film but also the deposition rate and the resistivity of the Cu3N film. In our experiment, the deposition rate of Cu3N films was 18 nm/min to 30 nm/min and increased with the N2 partial pressure. The resistivity of the Cu3N films increased sharply with the increasing N2 partial pressure. At a low N2 partial pressure, the Cu3N films showed a metallic conduction mechanism through the Cu path, and at a high N2 partial pressure, the conductivity of the Cu3N films showed a semiconductor conduction mechanism.
基金partly supported by Grant-in-Aid for Scientific Research on Innovative Areas from the Ministry of Education, Culture, Sports, Science and Technology of Japan (No.15K04723)
文摘We improved the photovoltaic properties of Cu_2O-based heterojunction solar cells using n-type oxide semiconductor thin films prepared by a sputtering apparatus with our newly developed multi-chamber system. We also obtained the highest efficiency(3.21%) in an AZO/p-Cu_2O heterojunction solar cell prepared with optimized pre-sputtering conditions using our newly developed multi-chamber sputtering system. This value achieves the same or higher characteristics than AZO/Cu_2O solar cells with a similar structure prepared by the pulse laser deposition method.
基金supported by the National Natural Science Foundation of China (Nos. 51701157 and 51505378)the Natural Science Foundation of Shaanxi Province of China (No. 2017JQ5031)
文摘The work is mainly to study the thermal stability including the phase stability, microstructure and tribo-mechanical properties of the AlB_2-type WB_2 and W–B–N(5.6 at.% N) films annealed in vacuum at various temperatures, which are deposited on Si and GY8 substrates by magnetron sputtering. For the WB_2 and W–B–N films deposited on Si wafers, as the annealing temperature increases from 700 to 1000 °C, a-WB(700 °C) and Mo_2B_5-type WB_2(1000 °C) are successively observed in the AlB_2-type WB_2 films, which show many cracks at the temperature ≥ 800 °C resulting in the performance failure; by contrast, only slight α-WB is observed at 1000 °C in the W–B–N films due to the stabilization eff ect of a-BN phase, and the hardness increases to 34.1 GPa fi rst due to the improved crystallinity and then decreases to 31.5 GPa ascribed to the formation of α-WB. For the WB_2 and the W–B–N films deposited on WC–Co substrates, both the WB_2 and W–B–N films react with the YG8(WC–Co) substrates leading to the formation of CoWB, CoW_2B_2 and CoW_3B_3 with the annealing temperature increasing to 900 °C; a large number of linear cracks occur on the surface of these two films annealed at ≥ 800 °C leading to the fi lm failure; after vacuum annealing at 700 °C, the friction performance of the W–B–N films is higher than that of the deposited W–B–N films, while the wear resistance of the WB_2 films shows a slight decrease compared with that of the deposited WB_2 films.
基金supported by the National Natural Science Foundation of China (Nos. 21377044 and 21573085)the Key Project of Natural Science Foundation of Hubei Province (No. 2015CFA037)
文摘TiO2 rutile/anatase heterostructure thin films with varying rutile thickness have been in-situ synthesized via DC magnetron sputtering with Ar gas at room temperature. The crystal texture, surface morphology, energy gap and optical properties of the films have been investigated by X-ray diffraction meter, grazing incidence X-ray diffraction meter, Raman spectroscopy, scanning electron microscopy, and UV–visible spectrophotometer, which indicates that the rutile/anatase heterostructure films are successfully fabricated. The further degradation experiments display that the photocatalytic activity can be dramatically affected by the thickness of the outmost rutile layer and the 100 nm thickness exhibits the best performance in all of the TiO2 thin films. With the increase of the outmost rutile layer, the optical band gap of TiO2 film displays a systematic decrease slightly. However,the change in photocatalytic activity does not coincide with that in the band gap. The photoresponse and electrochemical properties of the thin films have been characterized to understand the mechanism of the varied photocatalytic activity.
基金financially supported by the National Natural Science Foundation of China(No.50902006)Aviation Science Foundation of China(2012zf51066)
文摘Tungsten doped indium oxide （IWO） thin films were deposited on glass substrate at room temperature by radio frequency reactive magnetron sputtering. Chemical states analysis was carried out, indicating that valence states of element W in the films were W4＋ and W6＋. The effects of sputtering power and film thickness on the surface morphology, optical and electrical properties of IWO thin films were investigated. The IWO thin films had high transmittance in near infrared （NIR） spectral range. The resistivity, carrier mobility and carrier concentration owned their respective optimum values as sputtering power and thickness changed. The asdeposited IWO film with the minimum resistivity of 3.23 × 10^-4 Ω cm was obtained at a sputtering power of 50 W, with carrier mobility of 27.1 cm2 V-1 s-1, carrier concentration of 7.15 × 10^20 cm-3, average transmittance about 80% in visible region and above 75% in NIR region. It may meet the application requirement of high conductivity and transparency in NIR wavelength region.
基金supported by the National Natural Science Foundation of China (Grant No. 60807001)the National Basic Research Program of China (Grant No. 2011CB201605)the Foundation of Henan Educational Committee (Grant No. 2010A140017)
文摘This paper reports that a series of silver oxide （AgzO） films are deposited on glass substrates by direct-current reactive magnetron sputtering at a substrate temperature of 250 ℃ and an oxygen flux ratio of 15：18 by modifying the sputtering power （SP）. The AgxO films deposited apparently show a structural evolution from cubic biphased （AgO ＋ Ag20） to cubic single-phased （Ag20）, and to biphased （Ag20 ＋ AgO） structure. Notably, the cubic single-phased Ag20 fihn is deposited at the SP = 105 W and an AgO phase with （220） orientation discerned in the Ag^O films deposited using the SP 〉 105 W. The transmissivity and refiectivity of the AgxO films in transparent region decrease with the increase the SP, whereas the absorptivity inversely increases with the increase of the SP. These results may be due to the structural evolution and the increasing film thickness. A redshift of the films＇ absorption edges determined in terms of Tauc formula clearly occurs from 3.1 eV to 2.73 eV with the increase of the SP.
基金the program for Changjiang Scholars and Innovative Research Team in University (No.IRT0547
文摘CeO2-TiO2 films and CeO2-TiO/SnO2：Sb （6 mol%） double films were deposited on glass substrates by radio-frequency magnetron sputtering （R.F. Sputtering）, using SnO2：Sb（6 mol%） target, and CeO2- TiO2 targets with different molar ratio of CeO2 to TiO2 （CeO2：TiO2-0：1.0; 0.1：0.9; 0.2：0.8; 0.3：0.7; 0.4：0.6; 0.5：0.5; 0.6：0.4; 0.7：0.3; 0.8：0.2; 0.9：0.1; 1.0：0）. The films are characterized by UV-visible transmission and infrared reflection spectra, scanning electron microscopy （SEM）, Raman spectroscopy, X-ray photoelectron spectroscopy （XPS） and X-ray diffraction （XRD）, respectively. The obtained results show that the amorphous phases composed of CeO2-TiO2 play an important role in absorbing UV, there are Ce^3-, Ce^4- and Ti^4- on the surface of the films; the glass substrates coated with CeO2-TiO2 （Ce/Ti=0.5：0.5; 0.6：0.4）/SnO2：Sb（6 mol%） double films show high absorbing UV（〉99）, high visible light transmission （75%） and good infrared reflection （〉70%）. The sheet resistance of the films is 30-50 Ω/□. The glass substrates coated with the double functional films can be used as window glass of buildings, automobile and so on.
